A spin-orbit-torque magnetization rotational element includes: a spin-orbit torque wiring layer which extends in an X direction; and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer, wherein the first ferromagnetic layer has shape anisotropy and has a major axis in a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends, and wherein the easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and the Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.

A semiconductor stack for a Hall effect device, which comprises: a bottom barrier comprising Al.sub.xGa.sub.1-xAs, a channel comprising In.sub.yGa.sub.1-yAs, on the bottom barrier, a channel barrier with a thickness which is at least 2 nm and which is smaller than or equal to 15 nm, and which at least comprises a first layer comprising Al.sub.zGa.sub.1-zAs with 0.1≤z≤0.22, wherein the first layer has a thickness of at least 2 nm, wherein a conduction band edge of the bottom barrier and the first layer is higher than a conduction band edge of the channel, a doping layer comprising a composition of Al, Ga and As and doped with n-type material, a top barrier comprising a composition of Al, Ga and As.

Various embodiments of the present disclosure are directed towards a memory device including a shunting layer overlying a spin orbit torque (SOT) layer. A magnetic tunnel junction (MTJ) structure overlies a semiconductor substrate. The MTJ structure includes a free layer, a reference layer, and a tunnel barrier layer disposed between the free and reference layers. A bottom electrode via (BEVA) underlies the MTJ structure, where the BEVA is laterally offset from the MTJ structure by a lateral distance. The SOT layer is disposed vertically between the BEVA and the MTJ structure, where the SOT layer continuously extends along the lateral distance. The shunting layer extends across an upper surface of the SOT layer and extends across at least a portion of the lateral distance.

A current sensor integrated circuit (IC) includes a unitary lead frame having at least one first lead having a terminal end, at least one second lead having a terminal end, and a paddle having a first surface and a second opposing surface. A semiconductor die is supported by the first surface of the paddle, wherein the at least one first lead is electrically coupled to the semiconductor die and the at least one second lead is electrically isolated from the semiconductor die. The current sensor IC further includes a first mold material configured to enclose the semiconductor die and the paddle and a second mold material configured to enclose at least a portion of the first mold material, wherein the terminal end of the at least one first lead and the terminal end of the at least one second lead are external to the second mold material.

Embodiments of the invention include a method for fabricating a magnetoresistive random-access memory (MRAM) structure and the resulting structure. A first type of metal is formed on an interlayer dielectric layer with a plurality of embedded contacts, where the first type of metal exhibits spin Hall effect (SHE) properties. At least one spin-orbit torque (SOT) MRAM cell is formed on the first type of metal. One or more recesses surrounding the at least one SOT-MRAM cell are created by recessing exposed portions of the first type of metal. A second type of metal is formed in the one or more recesses, where the second type of metal has lower resistivity than the first type of metal.

A magnetic structure capable of field-free spin-orbit torque switching includes a spin-orbit coupling base layer and a ferromagnetic layer formed thereon. The spin-orbit coupling base layer is made from a particular crystal material. The ferromagnetic layer has magnetization perpendicular to a plane coupled to the spin-orbit coupling base layer, and is made from a particular ferromagnetic material with perpendicular magnetic anisotropy. The perpendicular magnetization of the ferromagnetic layer is switchable by an in plane current applied to the spin-orbit coupling base layer without application of an external magnetic field. A memory device and a production method regarding the magnetic structure are also provided.

A circuit for sensing a current comprises a substrate having a first and a second major surface, the second major surface being opposite to the first major surface. At least one magnetic field sensing element is arranged on the first major surface of the substrate and is suitable for sensing a magnetic field caused by a current flow in a current conductor coupled to the second major surface. The substrate also comprises at least one insulation layer, substantially buried between the first major surface and the second major surface of the substrate.

Various embodiments include an electrical device comprising an antiferromagnetic topological insulator having a surface comprising a bulk domain wall configured to support a first type of 1D chiral channel, a surface step configured to support a second 1D chiral channel and intersecting the bulk domain wall to form thereat a quantum point junction.

A sensor device comprises a sensor connected to a first signal and responsive to an external field to produce a sensor signal, a test device connected to a second signal and electrically connected in series with the sensor by an electrical test connection providing a test signal, and a monitor circuit electrically connected to the first, second and test signals. The monitor circuit comprises a processing circuit and a determination circuit. The processing circuit is responsive to the test signal and a predetermined processing value to form a processing output signal. The determination circuit is responsive to the processing output signal to determine a diagnostic signal. A sensor circuit responsive to the sensor signal provides a sensor device signal responsive to the external field.

A magnetic element according to an embodiment includes a wiring layer extending in a first direction and including a ferromagnetic material and a nonmagnetic layer laminated on the wiring layer in a second direction. The wiring layer includes a side surface inclined with respect to the second direction in a cross section orthogonal to the first direction. The side surface has one or more bending points at which an inclination angle with respect to the second direction becomes discontinuous. An inclination angle of a first inclined surface far from the nonmagnetic layer is smaller than an inclination angle of a second inclined surface close to the nonmagnetic layer in a state in which a first bending point at a position farthest from the nonmagnetic layer among the bending points is interposed between the inclination angles.