A chip package, a chip package system, a method of manufacturing a chip package, and a method of operating a chip package including: a first sensor configured to measure a magnetic field component up to a maximum magnetic field value; a second sensor configured to measure the magnetic field component beyond the maximum magnetic field value; and a circuit coupled to the first sensor and the second sensor and configured to receive at least one sensor signal from at least one of the first sensor and the second sensor, wherein the circuit is further configured to select the first sensor or the second sensor to measure the magnetic field component based on the received sensor signal.

A one-dimensional magnetic field sensor comprises a support, a single elongated magnetic field concentrator or two magnetic field concentrators, which are separated by a first gap, and at least one magnetic sensor element. The magnetic field concentrator, or both thereof, consists of at least two parts which are separated from each other by second gaps. A two-dimensional magnetic field sensor comprises a support, a single magnetic field concentrator which consists of at least three parts which are separated from each other by gaps, and at least two magnetic sensor elements.

A magnetic memory device includes a cylindrical core; a plurality of layers surrounding the cylindrical core; a first terminal connected to a first end of the cylindrical core; and a second terminal connected to a second end of the cylindrical core, opposite the first end, wherein the first terminal is configured to receive a first current flowing radially from the cylindrical core through the plurality of layers, the first current imparting a torque on, at least, a magnetization of an inner layer of the plurality of layers.

The present disclosure relates to 3-dimensional Hall sensor devices comprising a Hall sensor element having a Hall effect region implemented in a 3-dimensional shell and comprising at least three terminals. Each terminal is connected to at least one electrical contact of the Hall effect region and each electrical contact is disposed at a different region of the 3-dimensional shell. The present disclosure further discloses spinning current/voltage schemes for offset cancellation in such 3-dimensional Hall sensor devices.

A method for manufacturing semiconductor devices is provided. The method includes bonding a semiconductor element to a first surface of a planar lead frame, clamping a partial area of the lead frame to hold the lead frame and the semiconductor element in molding dies, and covering at least a part of the lead frame and the semiconductor element with a resin member by resin molding which fills the molding dies with resin. A thin-walled portion having a relative small thickness is previously formed on a shortest virtual line connecting a clamp area of the lead frame to an area where the semiconductor element is bonded.

A method of manufacturing a magnetoresistive device may comprise forming a first magnetic region, an intermediate region, and a second magnetic region of a magnetoresistive stack above a via; removing at least a portion of the second magnetic region using a first etch; removing at least a portion of the intermediate region and at least a portion of the first magnetic region using a second etch; removing at least a portion of material redeposited on the magnetoresistive stack using a third etch; and rendering at least a portion of the redeposited material remaining on the magnetoresistive stack electrically non-conductive.

In one example, circuitry is formed in a semiconductor die. A magnetic concentrator is formed on a surface of the semiconductor die and over the circuitry. An isolation spacer is placed on a lead frame. The semiconductor die is placed on the isolation spacer, and the magnetic concentrator is aligned to overlap the lead frame. Electrical interconnects are formed between the semiconductor die and the lead frame.

A perpendicular magnetic tunnel junction is disclosed wherein a metal insertion (MIS) layer is formed within a free layer (FL), a partially oxidized Hk enhancing layer is on the FL, and a nitride capping layer having a buffer layer/nitride layer (NL) is on the Hk enhancing layer to provide an improved coercivity (Hc)/switching current (Jc) ratio for spintronic applications. Magnetoresistive ratio is maintained above 100%, resistance×area (RA) product is below 5 ohm/μm.sup.2, and thermal stability to 400° C. is realized. The FL comprises two or more sub-layers, and the MIS layer may be formed within at least one sub-layer or between sub-layers. The buffer layer is used to prevent oxygen diffusion to the NL, and nitrogen diffusion from the NL to the FL. FL thickness is from 11 Angstroms to 25 Angstroms while MIS layer thickness is preferably from 0.5 Angstroms to 4 Angstroms.

A perpendicular magnetic tunnel junction is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to provide thermal stability to 400° C. Insertion of an oxidation control layer (OCL) such as Mg and a magnetic moment tuning layer (MMTL) like Mo or W enables FL thickness to be reduced below 10 Angstroms while providing sufficient PMA for a switching voltage substantially less than 500 mV at a 10 ns pulse width and 1 ppm defect rate. Magnetoresistive ratio is ≥1, and resistance×area (RA) product is below 5 ohm-μm.sup.2. Embodiments are provided where MMTL and OCL materials interface with each other, or do not contact each other. Each of the MMTL and OCL materials may be deposited separately, or at least one is co-deposited with the FL.

A magnetoresistance effect element where asymmetry of an inversion current due to a leakage magnetic field from a magnetization fixed layer is decreased. A magnetoresistance effect element includes a first ferromagnetic layer whose magnetization direction is variable, a second ferromagnetic layer whose magnetization direction is fixed, and a nonmagnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer which are laminated in a first direction which is a lamination direction, where both the first ferromagnetic layer and the second ferromagnetic layer are curved so that central portions of the first and second ferromagnetic layers protrude with respect to outer circumferential portions in the first direction, and protruding directions of the central portions are opposite to each other so that a distance between the outer circumferential portions is larger than a distance between the central portions in the first direction.