A magnetic field sensor of the present invention includes a first electrode including a magnetic material, a second electrode including a non-magnetic material, a common electrode disposed between the first electrode and the second electrode and connected to a ground terminal, a power supplier of which one end is connected to the first electrode and the second electrode and of which another end is connected to the common electrode to supply power of a frequency band required, a variable resistor configured to control at least one of a resistance value between the first electrode and the power supplier or a resistance value between the second electrode and the power supplier, and a differential amplifier connected to the first electrode through a positive terminal and connected to the second electrode through a negative terminal to output a difference value between a first capacitance generated by the first electrode and a second capacitance generated by the second electrode in response to external application of a magnetic field.

Systems and methods for performing word line pulse techniques in magnetoelectric junctions in accordance with embodiments of the invention are disclosed. In one embodiment, a magnetoelectric random access memory (MeRAM) circuit, including, a plurality of voltage controlled magnetic tunnel junction bits (MEJs) each magnetoelectric junction connected to the drain of an MOS transistor, the combination including three terminals, each connected to a bit, source, and at least one word line, in an array, and a driver circuit, including a bit line driver, and a word line driver the bit line driver, the driver circuit generates voltage pulses for application to the magnetoelectric junction bit, the output of the driver circuit is connected to the word line, which in turn is connected to the gate of the MOS access transistor in each MeRAM cell, thereby generating a square voltage pulse across the magnetoelectric junction bit.

In one aspect, a method includes etching a magnetic field sensor element covered by a bilayer hardmask. In another aspect, a method includes depositing a silicon nitride on a magnetic field sensor element, depositing a silicon dioxide on the silicon nitride, forming the bilayer mask by etching the silicon dioxide and etching the magnetic field sensor element partially covered by the bilayer hardmask. The magnetic field sensor element includes one of a giant magnetoresistance (GMR) element, a tunneling magnetoresistance (TMR) element or a magnetic tunnel junction (MTJ). The bilayer mask includes the silicon dioxide and the silicon nitride. In a further aspect, a sensor includes a magnetic field sensor element that includes one of a GMR element, a TMR element or a MTJ. The sensor also includes a bilayer hardmask disposed on the magnetic field sensor element. The bilayer mask includes a silicon dioxide and a silicon nitride.

A perpendicular magnetic tunnel junction device (pMTJ) is provided that has a structure of a first heavy metal layer, a first thin dusting layer on the first heavy metal layer, a first CoFeB layer on the thin dusting layer, a MgO barrier layer on the first CoFeB layer, a second CoFeB layer on the MgO barrier layer, a second thin dusting layer on the CoFeB layer; and a second heavy metal layer on the thin dusting layer. The insertion of the thin dusting layer improves thermal stability of the pMTJ structure.

Embodiments are directed to a magnetic tunnel junction (MTJ) memory cell that includes a reference layer formed from a perpendicular magnetic anisotropy (PMA) reference layer and an interfacial reference layer. The MTJ further includes a free layer and a tunnel barrier positioned between the interfacial reference layer and the free layer. The tunnel barrier is configured to enable electrons to tunnel through the tunnel barrier between the interfacial reference layer and the free layer. A first in-situ alignment is provided between a tunnel barrier lattice structure of the tunnel barrier and an interfacial reference layer lattice structure of the interfacial reference layer. A second in-situ alignment is provided between the tunnel barrier lattice structure of the tunnel barrier and a free layer lattice structure of the free layer. The PMA reference layer lattice structure is not aligned with the interfacial reference layer lattice structure.

A magnetoresistance effect element of the present invention includes: a barrier layer; a reference layer formed on one surface of the barrier layer; a free layer formed on the other surface of the barrier layer; and a pinned layer placed on the opposite side of the reference layer from the barrier layer. The pinned layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.

A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate.

A spin-transfer torque magnetic tunnel junction includes a layer stack with a pinned magnetic layer and a free magnetic layer, and an insulating barrier layer there-between. Each of the magnetic layers has an out-of-plane magnetization orientation. The junction is configured so as to allow a spin-polarized current flow generated from one of the two magnetic layers to the other to initiate an asymmetrical switching of the magnetization orientation of the free layer. The switching is off-centered toward an edge of the stack. The junction may allow a spin-polarized current flow that is off-centered toward an edge of the stack, from one of the two magnetic layers to the other, to initiate the asymmetrical switching. Related devices and methods of operation are also provided.

A method for fabricating an electronic device including a semiconductor memory includes: forming a memory layer over a substrate; forming a memory element by selectively etching the memory layer, wherein forming the memory element includes forming an etching residue on a sidewall of the memory element, the etching residue including a first metal; and forming a spacer by implanting oxygen and a second metal into the etching residue, the spacer including a compound of the first metal-oxygen-the second metal, the second metal being different from the first metal.

A magnetic memory device includes a memory cell array comprising memory cells including magnetic tunnel junction elements. Each memory cell is electrically connected between a source line and a bit line. A control circuit is configured to perform a screening test on the memory cell array before writing data to the memory cell array. The screening test determines whether an abnormal cell is present in the memory cell array. The controller applies a first writing voltage to the write data to the memory cell array if the abnormal cell is not present, or applies a second writing voltage to write data to the memory cell array if the abnormal cell is present. The second writing voltage is different from the first writing voltage.