A semiconductor structure is provided. The semiconductor structure includes an interconnection structure, a first transistor, and a second transistor. The interconnection structure includes a first metal line layer, a second metal line layer and a third metal line layer arranged over one another. The first transistor includes a gate structure. The second transistor is disposed adjacent to the first transistor, and includes a source/drain structure. The gate structure of the first transistor is disposed over and electrically connected to the first metal line layer, and the source/drain structure of the second transistor is arranged below and electrically connected to the second metal line layer through the third metal line layer. A manufacturing method of a semiconductor structure is also provided.

A semiconductor device in which a variation of transistor characteristics is small is provided. The semiconductor device includes a transistor. The transistor includes a first insulator, a first oxide over the first insulator, a first conductor, a second conductor, and a second oxide, which is positioned between the first conductor and the second conductor, over the first oxide, a second insulator over the second oxide, and a third conductor over the second insulator. A top surface of the first oxide in a region overlapping with the third conductor is at a lower position than a position of a top surface of the first oxide in a region overlapping with the first conductor. The first oxide in the region overlapping with the third conductor has a curved surface between a side surface and the top surface of the first oxide, and the curvature radius of the curved surface is greater than or equal to 1 nm and less than or equal to 15 nm.

A semiconductor device with a small variation in transistor characteristics is provided. An oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, and a gate electrode over the oxide semiconductor film are included; an opening is formed overlapping with a region between the source electrode and the drain electrode in the interlayer insulating film; the gate electrode is placed in the opening in the interlayer insulating film; and the source electrode and the drain electrode include a conductive film having compressive stress.

Semiconductor structures and formation processes thereof are provided. A semiconductor structure of the present disclosure includes a semiconductor substrate, a plurality of transistors disposed on the semiconductor substrate and comprising a plurality of gate structures extending lengthwise along a first direction, a metallization layer disposed over the plurality of transistors, the metallization layer comprising a plurality of metal layers and a plurality of contact vias, a dielectric layer over the metallization layer, a plurality of dielectric fins extending parallel along the first direction and disposed over the dielectric layer, a semiconductor layer disposed conformally over the plurality of dielectric fins, a source contact and a drain contact disposed directly on the semiconductor layer, and a gate structure disposed over the semiconductor layer and between the source contact and the drain contact.

An electrical device that includes at least one n-type field effect transistor including a channel region in a type III-V semiconductor device, and at least one p-type field effect transistor including a channel region in a germanium containing semiconductor material. Each of the n-type and p-type semiconductor devices may include gate structures composed of material layers including work function adjusting materials selections, such as metal and doped dielectric layers. The field effect transistors may be composed of fin type field effect transistors. The field effect transistors may be formed using gate first processing or gate last processing.

A method of manufacturing an integrated circuit includes: growing an epitaxial layer on a process surface of a base substrate; forming, by processes applied to an exposed first surface of the epitaxial layer, first transistor cells in the epitaxial layer, each first transistor cell including a first gate electrode; and forming, by processes applied to a surface opposite to the first surface, second transistor cells, each second transistor cell including a second gate electrode.

In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the <111> direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material selected from Groups III-V. Only one end of the nanowire directly contacts the silicon.

In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the <111> direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material selected from Groups III-V. Only one end of the nanowire directly contacts the silicon.

In one example, a device includes a p-type field effect transistor region and n-type field effect transistor region. The p-type field effect transistor region includes at least one fin including strained germanium. The n-type field effect transistor region also includes at least one fin including strained germanium.

A device that includes: a substrate layer; a first set of source/drain component(s) defining an nFET (n-type field-effect transistor) region; a second set of source/drain component(s) defining a pFET (p-type field-effect transistor) region; a first suspended nanowire, at least partially suspended over the substrate layer in the nFET region and made from III-V material; and a second suspended nanowire, at least partially suspended over the substrate layer in the pFET region and made from Germanium-containing material. In some embodiments, the first suspended nanowire and the second suspended nanowire are fabricated by adding appropriate nanowire layers on top of a Germanium-containing release layer, and then removing the Germanium-containing release layers so that the nanowires are suspended.