A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including a plurality of unit patterns for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the plurality of unit patterns and read touch coordinates as a result of the scanning.

The present disclosure provides a solar cell and a method for preparing the same. The solar cell includes a semiconductor substrate, a first heavily doped layer, a front electrode, an emitter layer, and a back electrode. The first heavily doped layer and the front electrode are disposed on the front surface of the semiconductor substrate. The first heavily doped layer is disposed between the front electrode and the semiconductor substrate. The emitter layer is disposed between the back electrode and the semiconductor substrate.

The present disclosure provides a solar cell and a method for preparing the same. The solar cell includes a semiconductor substrate, a first heavily doped layer, a front electrode, an emitter layer, and a back electrode. The first heavily doped layer and the front electrode are disposed on the front surface of the semiconductor substrate. The first heavily doped layer is disposed between the front electrode and the semiconductor substrate. The emitter layer is disposed between the back electrode and the semiconductor substrate.

An IR photodetector detects IR radiation in a frequency range. The IR photodetector includes an electrically conductive layer, first and second vertical supports extending from the electrically conductive layer and defining a cavity therebetween and over the electrically conductive layer, and a transparent electrically conductive layer carried by the first and second vertical supports and over the cavity. The transparent electrically conductive layer defines a gate electrode. The IR photodetector also includes a detector layer over the transparent electrically conductive layer and having a perforated pattern. The detector layer has graphene layers intercalated with ferric chloride layers. The IR photodetector also includes first and second electrically conductive contacts carried by the transparent electrically conductive layer on opposite sides of the detector layer.

An IR photodetector detects IR radiation in a frequency range. The IR photodetector includes an electrically conductive layer, first and second vertical supports extending from the electrically conductive layer and defining a cavity therebetween and over the electrically conductive layer, and a transparent electrically conductive layer carried by the first and second vertical supports and over the cavity. The transparent electrically conductive layer defines a gate electrode. The IR photodetector also includes a detector layer over the transparent electrically conductive layer and having a perforated pattern. The detector layer has graphene layers intercalated with ferric chloride layers. The IR photodetector also includes first and second electrically conductive contacts carried by the transparent electrically conductive layer on opposite sides of the detector layer.

A solar cell device includes a solar cell unit, an electrode, and a first diffusion reducer. The solar cell unit includes a light-receiving surface. The first diffusion reducer is located between the solar cell unit and the electrode. The first diffusion reducer includes a first surface on the light-receiving surface and a second surface on the electrode. In a plan view of the light-receiving surface, the first diffusion reducer is located in an area other than at least part of an area not overlapping the electrode.

A solar cell device includes a solar cell unit, an electrode, and a first diffusion reducer. The solar cell unit includes a light-receiving surface. The first diffusion reducer is located between the solar cell unit and the electrode. The first diffusion reducer includes a first surface on the light-receiving surface and a second surface on the electrode. In a plan view of the light-receiving surface, the first diffusion reducer is located in an area other than at least part of an area not overlapping the electrode.