The present invention provides a PSVA liquid crystal display panel, comprising an upper substrate (1), a lower substrate (2) oppositely located to the upper substrate (1) and a liquid crystal layer (3) located between the upper substrate (1) and the lower substrate (2); the lower substrate (2) comprises a second substrate (21), a thin film transistor, a passivation layer (22) and a pixel electrode (23); the lower substrate (2) comprises a plurality of pixel areas, and the passivation layer (22) is a passivation layer which is patterned, and is respectively formed the same pattern corresponding to the plurality of pixel areas, and the pattern comprises a plurality of trenches (221) extending toward various directions; the pixel electrode (23) is entirely attached to the passivation layer (22) which is patterned and comprises a corresponding pattern with the passivation layer (22); a depth of the trench (221) is 2000-4000 . The PSVA liquid crystal display panel of the present invention possesses higher transmittance and excellent optical performance.

A display apparatus includes a light emitting diode part and a thin film (TFT) panel configured to drive the light emitting diode part. The light emitting diode part includes a transparent support substrate, a plurality of light emitting diodes, a plurality of phosphor layers disposed on the support substrate covering at a first portion of the plurality of light emitting diodes and configured to emit light through a conversion of introduced light. Another display apparatus includes a light emitting diode part including a plurality of light emitting diodes and a TFT panel configured to drive the light emitting diode part. The TFT panel includes a panel substrate including a TFT driving circuit and a plurality of grooves formed on the panel substrate. The TFT panel also includes a plurality of phosphor layers the plurality of grooves and configured to emit light through wavelength conversion of introduced light.

Provided are an organic light emitting display panel and an organic light emitting display device. The organic light emitting display panel includes: an organic light emitting display panel. The organic light emitting display panel may include: a flexible substrate including a first non-bending area, a second non-bending area and a bending area between the first non-bending area and the second non-bending area; a plurality of organic light emitting elements disposed in the first non-bending area, the second non-bending area and the bending area; and a plurality of pixel driving circuits electrically connected to the plurality of organic light emitting elements, respectively, and disposed only in the first non-bending area and the second non-bending area. The organic light emitting element may include an anode, an organic emission layer, and a cathode.

This disclosure pertains to the technical field of liquid crystal display, and in particular to a display panel and a display apparatus. This display panel comprises a first substrate and a second substrate provided by cell-assembling, wherein the first substrate and the second substrate are both flexible and bendable, and wherein both of the first substrate and the second substrate are provided with a repulsion layer therein, which enables the first substrate and the second substrate to repel each other. By the addition of the repulsion layer to the display panel, the effect of maintaining a uniform cell thickness of the flexible display panel is achieved and the display panel is allowed to have a better displaying effect.

A liquid crystal display device includes a gate line in a first direction, a data line in a second direction intersecting the first direction, a pixel including a first region having a transistor connected to the gate and data lines, and a contact hole connecting the transistor to a pixel electrode, and a second region having the pixel electrode, wherein a length of a first width along the first direction on the first region is longer than a length of a second width along the second direction on the first region, and wherein a length of a third width along the first direction on the second region is longer than a length of a fourth width along the second direction on the second region.

A flexible substrate, a display panel, and a fabrication method of the flexible substrate are provided. The fabrication method comprises providing a bearing substrate including a bearing surface and a back-surface opposite to the bearing surface, and forming a stress-absorbing layer on the back-surface of the bearing substrate. The fabrication method further comprises forming a flexible substrate material layer, a blocking layer, and a device layer sequentially on the bearing surface of the bearing substrate, and removing the bearing substrate and the stress-absorbing layer formed on the back-surface of the bearing substrate.

The present application discloses a mother substrate comprising a first region comprising a plurality of display substrate units; and a second region; the first region comprises a buffer layer on and in contact with a base substrate, the second region comprises a mat layer on and in contact with the base substrate for reducing segment difference between the first region and the second region.

A flexible display device including a substrate having an active region in which an input image is implemented and a bezel region outside the active region; a signal line (or an electrode) extending from the bezel region and transmitting a signal (or a voltage) to the active region; and a first bypass line provided above or below the signal line with one or more insulating layers interposed therebetween in the bezel region, wherein the first bypass line is connected to the signal line via a first bypass contact hole penetrating through the one or more insulating layers and receives the same signal as that of the signal line, and wherein the first bypass contact hole is provided as at least two bypass contact holes.

The described technology relates generally to a thin film transistor for a display device and an organic light emitting diode display device including the same. An exemplary embodiment provides a thin film transistor for a display device, including: a substrate; a semiconductor that is disposed on the substrate and includes a channel, and a source region and a drain region disposed at opposite sides of the channel; a gate insulating layer that includes a first gate insulating layer disposed on the substrate and the semiconductor, and a second gate insulating layer disposed on the first gate insulating layer and overlapping the channel; a gate electrode disposed on the second gate insulating layer; an interlayer insulating layer disposed directly on the first gate insulating layer and the gate electrode; and a source electrode and a drain electrode that are disposed on the interlayer insulating layer and are connected to the semiconductor, wherein a thickness of a portion of the gate insulating layer overlapped with the gate electrode may be larger than that of a portion of the gate insulating layer overlapped with the source region and that of a portion of the gate insulating layer overlapped with the drain region.

A pixel array substrate including a substrate having at least one via, at least one conductor disposed in the at least one via, pixel units, scan lines electrically connected to the pixel units, at least one shift register and at least one bus line is provided. The pixel units, the scan lines and the at least one shift register are disposed on a first surface of the substrate. The at least one shift register is used to transmit a first gate signal to the corresponding scan lines. The at least one bus line is disposed on a second surface of the substrate. The at least one bus line is electrically connected to the at least one shift register by the at least one conductor.