Patent classifications
H10D86/411
DISPLAY DEVICE AND METHOD OF MANUFACTURING THEREOF
The present application discloses a display device having a metal pattern on a substrate of a display device and a light absorbing layer positioned to absorb light reflected by the metal pattern, and a manufacturing method thereof. The light absorbing layer has a pattern corresponding to at least a portion of the metal pattern.
DISPLAY DEVICE
According to one embodiment, a display device includes a color filter formed on an inorganic layer, an inorganic film formed above the color filter, and a semiconductor layer formed above the inorganic film. As seen in plan view, the inorganic film is provided over a first area in which the color filter is overlapped and a second area which surrounds the first area. In the second area, the inorganic film is located outward of the color filter.
DISPLAY DEVICE
According to one embodiment, a display device includes a first substrate including a support substrate, a light shield, an insulating substrate disposed above the support substrate and the light shield and including a through hole, a pad electrode formed above the insulating substrate, and a signal line electrically connected to the pad electrode, and a first substrate including, in a plan view, a first area in which the support substrate and the light shield are disposed and a second area in which the through hole is disposed, a line substrate including a connection line and disposed below the insulating substrate, and a conductive material disposed inside the through hole to electrically connect the pad electrode and the connection line.
SEMICONDUCTOR STRUCTURE
A semiconductor structure includes a substrate and a first element disposed in the substrate and arranged along a first direction. The first element is made of a semiconductor oxide material. The semiconductor structure also includes a dielectric layer disposed on the first element, and a second element, disposed on the dielectric layer and arranged along the first direction. The second element is used as a gate of a transistor structure.
Flexible substrate, flexible display panel and flexible display device
The present invention provides a flexible substrate, a flexible display panel and a flexible display device. The flexible substrate includes an on-off element and an insulating layer, wherein a part of the insulating layer serves as a part of the on-off element, and the part of the insulating layer serving as a part of the on-off element is separated from rest part of the insulating layer. In the flexible substrate, the part of the insulating layer serving as a part of the on-off element is separated from the rest part of the insulating layer, such that cracks generated in the reset part of the insulating layer are unlikely to extend to the region where the on-off element is located, thus the poor contact or abnormal on-off phenomenon of the on-off element can be avoided.
BOA liquid crystal panel and manufacturing method thereof
The present invention provides a BOA liquid crystal panel and a manufacturing method thereof. The BOA liquid crystal panel includes a first substrate, a second substrate opposite to the first substrate, a black matrix arranged in the first substrate, a thin-film transistor arranged on the black matrix, a color resist layer arranged on the second substrate, a common electrode layer arranged on the second substrate and the color resist layer, a photoresist spacer arranged on the common electrode layer and located between the first substrate and the second substrate, and a liquid crystal layer arranged between the first substrate and the second substrate. The present invention arranges the black matrix of the liquid crystal panel in a channel that is pre-formed in a substrate to make the film thickness of the liquid crystal panel uniform and improve the display performance of the liquid crystal panel.
Flexible Display Device
A flexible display device of which esthetic appearance is improved by reducing a bezel is disclosed. The flexible display device comprises a substrate including a display area and a non-display area including a bending area; a link line in the non-display area on the substrate; and a bending connection line in the bending area pf the substrate and connected with the link line, and the bending connection line located between a first buffer layer and a second buffer layer of the flexible display device.
THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME
A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulating substrate; a polycrystal semiconductor layer formed on the insulating substrate; a buffer layer formed below the polycrystal semiconductor layer and containing fluorine; a gate electrode overlapping the polycrystal semiconductor layer; a source electrode and a drain electrode overlapping the polycrystal semiconductor layer and separated from each other; and a pixel electrode electrically connected to the drain electrode.
RESIN PRECURSOR, RESIN COMPOSITION CONTAINING SAME, POLYIMIDE RESIN MEMBRANE, RESIN FILM, AND METHOD FOR PRODUCING SAME
Provided is a resin composition including a polyimide precursor that has exceptional adhesiveness to glass substrates and that does not generate particles during laser detachment. A resin composition containing (a) a polyimide precursor, (b) an organic solvent, and (d) an alkoxysilane compound, wherein the resin composition shows polyimide obtained by imidation of the (a) polyimide precursor after application of the resin composition to the surface of a support, the residual stress with the support is from 5 MPa to 10 MPa, and the 308 nm absorbance of the (d) alkoxysilane compound when made into a 0.001 mass % NMP solution is from 0.1 to 0.5 at a solution thickness of 1 cm.
SEMICONDUCTOR DEVICE
A semiconductor device is provided to include a flexible substrate, a barrier layer, a heat insulating layer, a device layer, a dielectric material later and a stress absorbing layer. The barrier layer is disposed on the flexible substrate. The heat insulating layer is disposed on the barrier layer, wherein the heat insulating layer has a thermal conductivity of less than 20 W/mK. The device layer is disposed on the heat insulating layer. The dielectric material layer is disposed on the device layer, and the dielectric material layer and the heat insulating layer include at least one trench. The stress absorbing layer is disposed on the dielectric material layer, and the stress absorbing layer fills into the at least one trench.