In one embodiment, a flexible device is provided. The flexible device may include a flexible substrate, a buffer layer, a light reflective layer, and a device layer. The buffer layer is located on the flexible substrate. The light reflective layer is located on the flexible substrate, wherein the light reflective layer has a reflection wavelength of 200 nm1100 nm, a reflection ratio of greater than 80%, and a stress direction of the light reflective layer is the same as a stress direction of the flexible substrate. The device layer is located on the light reflective layer and the buffer layer.

A biometric identification device having sensing electrodes with multiple connection selections includes a plurality of sensing electrodes disposed on a surface of a substrate, each sensing electrode corresponding to a data readout selector and at least one reference voltage selector. The data readout selector has a first terminal connected to the sensing electrode and a second terminal connected to a corresponding data readout select trace. The reference voltage selector has a first terminal connected to the first terminal of the data readout selector and a second terminal connected to a corresponding reference voltage select trace. A control unit divides the sensing electrodes into at least one sensing area and at least one non-sensing area by means of the data readout selectors, the data readout select traces, the reference voltage selectors, and the reference voltage select traces.

The present disclosure discloses a LTPS TFT and the manufacturing method thereof. The method includes: forming a semiconductor layer and a LTPS layer on the same surface on a base layer; forming an oxide layer is formed on one side of the semiconductor layer facing away the base layer, and forming the oxide layer on one side of the LTPS layer facing away the base layer; forming a first photoresist layer of a first predetermined thickness on the oxide layer; arranging a corresponding first cobalt layer on each of the photoresist layers, a vertical projection of the first cobalt layer overlaps with the vertical projection of the corresponding first photoresist layer; doping high-concentration doping ions into a first specific area of the semiconductor layer. With such configuration, the number of the masking process is decreased and the manufacturing time is reduced.

Processes and overturned thin film device structures generally include a metal gate having a concave shape defined by three faces. The processes generally include forming the overturned thin film device structures such that the channel self-aligns to the metal gate and the contacts can be self-aligned to the sacrificial material.

A manufacturing method of flexible display panels, a flexible glass substrate, and a flexible display panel are disclosed. The manufacturing method of the flexible display panel includes: forming a TFT layer at one side of a flexible glass substrate; forming a polymer enhanced layer at the other side of the flexible glass substrate; curing the polymer enhanced layer; forming a display layer on the TFT layer; and forming an encapsulation layer on the side of the flexible glass substrate where the TFT layer is located. With such configuration, the compressive strength of the flexible glass substrate is enhanced so as to enhance the quality of products.

A gas barrier laminate includes a substrate and a barrier layer formed on at least one of faces of the substrate. The barrier layer includes composite oxide including silicon and alkaline-earth metal.

An array substrate, a method for manufacturing the same and a display apparatus are provided. The array substrate comprises: a substrate (1); a common electrode (2) and a pixel electrode (10) sequentially formed on the substrate (1) and insulated from each other; a thin film transistor comprising a gate electrode (4), an active layer (7), a source electrode (8a) and a drain electrode (8b), wherein the drain electrode (8b) is electrically connected with the pixel electrode (10); a common electrode line (5) disposed in a same layer as the gate electrode (4); and an insulating layer (3) between the gate electrode (4) and the common electrode (2), wherein the common electrode (2) is connected with the common electrode line (5) through a through hole in the insulating layer (3).

There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size and/or utilize the side surface of an assembled flexible display.

To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

A manufacturing method of an array substrate includes: providing a first substrate; forming a gate line, a data line, and a thin-film transistor array on the first substrate; forming a pixel electrode on the thin-film transistor array; depositing and forming a first passivation layer on the pixel electrode, the data line, and the thin-film transistor array; forming a black matrix on the first passivation layer; and forming a common electrode on the black matrix and the first passivation layer. The black matrix has a size that completely covers at least the data line such that when the common electrode is formed on the black matrix and the first passivation layer, a portion of the common electrode that corresponds exactly to the data line is completely spaced from the data line by the black matrix and the first passivation layer.