To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.

Method for fabricating a semiconductor structure. The method includes: providing a crystalline silicon substrate; defining an opening in a dielectric layer on the crystalline silicon substrate, the opening having sidewalls and a bottom wherein the bottom corresponds to a surface of the crystalline silicon substrate; providing a confinement structure above the dielectric layer, thereby forming a confinement region between the confinement structure and the dielectric layer; and growing a crystalline compound semiconductor material in the confinement region thereby at least partially filling the confinement region. The present invention also provides an improved compound semiconductor structure and a device for fabricating such semiconductor structure.

An electronic device may have a flexible display with portions that are bent along a bend axis. The display may have display circuitry such as an array of display pixels in an active area. Contact pads may be formed in an inactive area of the display. Signal lines may couple the display pixels to the contact pads. The signal lines may overlap the bend axis in the inactive area of the display. During fabrication, an etch stop may be formed on the display that overlaps the bend axis. The etch stop may prevent over etching of dielectric such as a buffer layer on a polymer flexible display substrate. A layer of polymer that serves as a neutral stress plane adjustment layer may be formed over the signal lines in the inactive area of the display. Upon bending, the neutral stress plane adjustment layer helps prevent stress in the signal lines.

A semiconductor device, comprising a base substrate, a buffer layer and a polysilicon layer film, wherein the base substrate, the buffer layer and the polysilicon layer film being laminated sequentially, and wherein regularly arranged first grooves being provided on a surface of the buffer layer contacting the polysilicon film; the polysilicon film being formed, by applying crystallization treatment, through an optical annealing process, to an amorphous silicon film on the buffer layer having regularly arranged first grooves.

A thin-film device includes a resin film which includes a first surface and a second surface facing the first surface, a first inorganic layer on the first surface, a thin-film element on the first inorganic layer, and a second inorganic layer on the second surface, wherein a film density of the second inorganic layer is greater than a film density of the first inorganic layer.

Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

The present disclosure provides a display substrate, a method for manufacturing the display substrate, and a display device. An intermediate layer is formed on an organic base plate, a thermal expansion coefficient of the intermediate layer is smaller than that of the organic base plate and greater than that of an inorganic thin film, and the inorganic thin film is formed on the intermediate layer.

A particular device includes a replica circuit disposed above a dielectric substrate. The replica circuit includes a thin film transistor (TFT) configured to function as a variable capacitor or a variable resistor. The device further includes a transformer disposed above the dielectric substrate and coupled to the replica circuit. The transformer is configured facilitate an impedance match between the replica circuit and an antenna.

A display panel includes a first substrate on which an electrode line and a switching element are disposed, a second substrate positioned opposite the first substrate, a seal provided between the first substrate and the second substrate, a pad electrode that vertically overlaps the seal and is electrically connected to the electrode line, and a side electrode which is connected to one end of the pad electrode and includes a portion positioned on an exterior facing side of the seal.

The present invention provides a method for manufacturing an assembly of a flexible display device and an assembly of a flexible display device manufactured therewith. The method includes: (1) providing a flexible base (22); (2) forming a graphene layer (24) on the flexible base (22); (3) forming a protective layer (26) on the graphene layer (24); (4) forming a low-temperature polysilicon layer (28) on the protective layer (26). The method for manufacturing an assembly of a flexible display device and the assembly of the flexible display device manufactured therewith according to the present invention are such that the graphene layer is formed on the flexible base to effectively conduct out heat generated in the process of forming the low-temperature polysilicon layer so as to protect the flexible base from being affected by the heat without increasing the thickness of the protective layer thereby reducing internal stress and facilitating the realization of thinning.