An active matrix substrate includes a glass substrate 26, a plurality of pixel electrodes 40 arrayed in a matrix, a plurality of TFTs 43, a plurality of common electrodes 42, a terminal group 60 provided at one end of a Y-axis direction on top of the glass substrate 26 and constituted by a plurality of terminals 61 and 62 placed along an X-axis direction, wires 71 that electrically connect the terminals 61 to the TFTs 43, and wires 72 that electrically connect the terminals 62 to the common electrodes 42. The terminal group 60 includes a center terminal group 64, constituted by a plurality of the first terminals 61, that constitutes a center portion of the terminal group 60 in the X-axis direction, and end terminal groups 65L and 65R, each constituted by a plurality of the first terminals and a plurality of the second terminals, that constitute both side portions, respectively, of the terminal group 60 in the X-axis direction and in each of which the second terminals 62 are each disposed between two of the first terminals 61 adjacent to each other.

An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

Systems, methods, and apparatus for an improved body tie construction that produces all the benefits of conventional body tie (H-gate, T-gate), without the limitations and degradations associated with those constructions are described. The improved body tie construction is configured to have a lower resistance body tie when the transistor is off (Vg approximately 0 volts). When the transistor is on (Vg>Vt), the resistance to the body tie is much higher, reducing the loss of performance associated with presence of body tie.

A display device includes a pixel including a thin film transistor, and an under layer below the thin film transistor. The thin film transistor includes a first gate electrode, a semiconductor layer and a second gate electrode. The semiconductor layer includes a channel region that overlaps at least one of the first gate electrode and the second gate electrode in a plan view. The channel region curves in a thickness direction of the semiconductor layer. The first gate electrode includes a first edge located on the side of an edge of the channel region in a direction of a channel length. The second gate electrode includes a second edge located on the side of the edge of the channel region. The position of the first edge is different from the position of the second edge in the direction of the channel length.

A substrate including gate wirings including gate line and a gate electrode disposed on the substrate, a storage line disposed on the same layer as the gate wirings, a gate insulating layer disposed on the gate wirings and the storage line, an oxide semiconductor layer pattern disposed on the gate insulating layer, data wirings including a data line crossing the gate line, a source electrode disposed on one side of the oxide semiconductor layer pattern, and a drain electrode disposed on another side of the oxide semiconductor layer, and an etch stopper including a first etch stopper portion disposed between the storage line and the data line and partially overlapping both the data line and the storage line.

To provide a highly reliable semiconductor device using an oxide semiconductor. The semiconductor device includes a first electrode layer; a second electrode layer positioned over the first electrode layer and including a stacked-layer structure of a first conductive layer and a second conductive layer; and an oxide semiconductor film and an insulating film positioned between the first electrode layer and the second electrode layer in a thickness direction. The first conductive layer and the insulating film have a first opening portion in a region overlapping with the first electrode layer, The oxide semiconductor film has a second opening portion in a region overlapping with the first opening portion. The second conductive layer is in contact with the first electrode layer exposed in the first opening portion and the second opening portion.

The present invention provides a double-sided display substrate and a manufacturing method thereof and a display device. The double-sided display substrate includes several sub-pixel units, the sub-pixel unit includes a front side light-emitting layer provided for front side displaying, a back side light-emitting layer provided for back side displaying, a pixel electrode layer, a common electrode layer, and a driving transistor, and the front side light-emitting layer and the back side light-emitting layer are interposed between a corresponding pixel electrode layer and the common electrode layer, respectively, the common electrode layer corresponding to the back side light-emitting layer and/or the front side light-emitting layer is disposed in the same layer as a gate electrode layer of the driving transistor. According to the double-sided display substrate, quick manufacture and spread of the double-sided display substrate are realized.

A supporting device includes a main body and a ring-shaped glue layer. The main body includes a top surface and a bottom surface opposite to the top surface. The top surface defines a first groove. The first groove is substantially ring-shaped. The glue layer is arranged in the top surface and surrounds the first groove. A plurality of glass-frits is distributed in the glue layer. A thickness of the main body is approximately in a range from 0.5 millimeters to 0.8 millimeters. The glue layer is directly attached the top surface.

The present invention provides a PSVA liquid crystal display panel, comprising an upper substrate (1), a lower substrate (2) oppositely located to the upper substrate (1) and a liquid crystal layer (3) located between the upper substrate (1) and the lower substrate (2); the lower substrate (2) comprises a second substrate (21), a thin film transistor, a passivation layer (22) and a pixel electrode (23); the lower substrate (2) comprises a plurality of pixel areas, and the passivation layer (22) is a passivation layer which is patterned, and is respectively formed the same pattern corresponding to the plurality of pixel areas, and the pattern comprises a plurality of trenches (221) extending toward various directions; the pixel electrode (23) is entirely attached to the passivation layer (22) which is patterned and comprises a corresponding pattern with the passivation layer (22); a depth of the trench (221) is 2000-4000 . The PSVA liquid crystal display panel of the present invention possesses higher transmittance and excellent optical performance.

There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size and/or utilize the side surface of an assembled flexible display.