The present disclosure relates to a solar battery. The solar battery comprises a semiconductor structure, a back electrode, and an upper electrode. The semiconductor structure defines a first surface and a second surface. The semiconductor structure comprises an N-type semiconductor layer and a P-type semiconductor layer. The back electrode is located on the first surface. The upper electrode is located on the second surface. The back electrode comprises a first carbon nanotube, the upper electrode comprises a second carbon nanotube, and the first carbon nanotube intersects with the second carbon nanotube. A multilayer structure is formed by an overlapping region of the first carbon nanotube, the semiconductor structure and the second carbon nanotube.

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: ##STR00001## In Chemical Formula 1, each substituent is the same as described in the detailed description.

A photovoltaic device (1) is provided with plurality of mutually subsequent photovoltaic device cells (1A, . . . , 1F) arranged along a direction of first device axis (D1). Each pair of a photovoltaic device cell and its successor are serially arranged through an interface region (1CD), further having a bypass function, and which extends along a second axis (D2), transverse to the first axis.

Provided are an inverted thick 2D hybrid perovskite solar cell insensitive to film thickness and a preparation method thereof, belonging to the field of organic-inorganic hybrid perovskite materials. The solar cell adopts a 2D hybrid perovskite thick-film material as a light absorption layer having thickness in a range of 500-800 nm, which is conducive to the full absorption of sunlight. The thick-film film material can be deposited from a precursor solution added with guanidine hydroiodide, and is composed of large grains growing along the thickness direction. The solar cell with an inverted structure prepared by using the thick-film material as a light absorption layer has an efficiency fluctuation less than 5% in a film thickness range of 500-800 nm. This is of great value for the preparation of high-performance hybrid perovskite solar cells by a large-area solution method.

A semiconductor apparatus includes, a substrate having a main surface, an upper electrode disposed above the substrate, a first lower electrode and a second lower electrode disposed between the substrate and the upper electrode, an isolation region disposed between the first lower electrode and the second lower electrode, a functional layer configured to perform light emission or photoelectric conversion, and an interface layer disposed at least on the first lower electrode. The semiconductor apparatus further includes a first insulator portion that is disposed between the first lower electrode and the second lower electrode and includes a first portion disposed at a position farther away from the main surface than an upper surface of the interface layer.

Provided is a structure 1 including an infrared light photoelectric conversion element 300 including an infrared light photoelectric conversion layer including a photoelectric conversion material that has a maximum absorption wavelength in an infrared range and generates a charge depending on absorbed light in the infrared range; a visible light photoelectric conversion element 200 that absorbs a light beam having a wavelength in a visible range and generates a charge depending on absorbed light; and an optical filter 400 that blocks and transmits a light beam of a predetermined wavelength, in which the infrared light photoelectric conversion element 300, the visible light photoelectric conversion element 200, and the optical filter 400 are provided on the same optical path, and each of the infrared light photoelectric conversion element 300 and the visible light photoelectric conversion element 200 is provided on an emission side of light from the optical filter 400. Provided is further an optical sensor and an image display device, each of which including the structure 1.

An electronic device, such as, without limitation, a perovskite solar cell or a light emitting diode, includes an assembly including at least one electronic portion or component, and a composite coating layer covering at least part of the assembly including the at least one electronic portion or component. The composite coating layer includes a polymer material, such as, without limitation, PMMA or PMMA-PU, having nanoparticles, such as, without limitation, reduced graphene oxide or SiO.sub.2, embedded therein. The electronic device may further include a second coating layer including a second polymer material (such as, without limitation, PMMA or PMMA-PU without nanoparticles) positioned between the coating layer and the assembly.

A laminate which allows to obtain an organic thin-film solar cell having excellent output characteristics and transparency is provided. The laminate as above has a titanium oxide layer that is disposed on the member serving as a light-transmissive electrode layer and serves as an electron transport layer. The titanium oxide layer has a thickness of not less than 1.0 nm and not more than 200.0 nm. The titanium oxide layer contains indium oxide and metallic indium, InOx/Ti is not less than 0.50 and not more than 20.00 in atomic ratio, and InM/Ti is less than 0.100 in atomic ratio, where an elemental titanium content is represented by Ti, an indium oxide content is represented by InOx, and a metallic indium content is represented by InM.

An organic device includes at least one electrode, an insulating layer adjacent to the at least one electrode in a plan view, and an organic layer that is continuously in contact with an upper surface of the at least one electrode and an upper surface of the insulating layer. The organic layer contains a polymer of an organic material. The organic material contains a basic molecular skeleton and a polymerizable functional group. In the polymer, the organic material is polymerized through the polymerizable functional group.

The present inventive concept relates to a method of manufacturing a thin film of a perovskite compound, including a process of reacting at least one compound selected from among an amine-based compound and an amidine-based compound, an organic metal compound including a divalent positive ion, and at least one hydrogen halide, and a method of manufacturing a solar cell using the same, and

According to the present inventive concept, because a perovskite compound is manufactured by performing a reaction through a chemical vapor deposition (CVD) process and an atomic layer deposition (ALD) process, step coverage may be enhanced, and thus, it may be possible to form a thin film having a uniform thickness and a problem where a solvent remains may also be solved.