Patent classifications
H04N5/335
Unit pixel of image sensor, image sensor, and computing system having the same
A unit pixel of an image sensor includes a charge generation unit, a signal generation unit, and a ground control transistor. The charge generation unit generates photo-charges in response to incident light and provides the photo-charges to a floating diffusion area in response to a transmission control signal. The signal generation unit generates an analog signal having a magnitude corresponding to an electrical potential of the floating diffusion area based on a reset control signal and a row selection signal. The ground control transistor is coupled between the floating diffusion area and a ground voltage, and is turned on in response to a ground control signal.
Voltage generator and image sensing device including the same
A voltage generator includes a supply voltage conversion block suitable for converting a supply voltage into an internal voltage, and a supply voltage control block suitable for supplying the supply voltage to the supply voltage conversion block, wherein the supply voltage has different voltage levels that correspond to generation sections of the internal voltage.
IMAGING UNIT, ENDOSCOPE, AND METHOD OF MANUFACTURING IMAGING UNIT
An imaging unit includes: a flexible substrate including one end connected to a light receiving surface of a solid state image sensor, the flexible substrate extending to a surface side opposite to the light receiving surface; a multi-layer substrate connected to a surface of the flexible substrate, the surface of the flexible substrate being a surface to which the solid state image sensor is connected, the multi-layer substrate including a plurality of electronic components mounted thereon; and a connection layer configured to electrically and mechanically connect to connection members provided on the surface of the flexible substrate and a surface of the multi-layer substrate facing the surface of the flexible substrate.
SOLID STATE IMAGE SENSOR
A solid state image sensor of the present disclosure includes: a first semiconductor substrate provided with at least a pixel array unit in which pixels that perform photoelectric conversion are arranged in a matrix form; and a second semiconductor substrate provided with at least a control circuit unit that drives the pixels. The first semiconductor substrate and the second semiconductor substrate are stacked, with first surfaces on which wiring layers are formed facing each other, the pixel array unit is composed of a plurality of divided array units, the control circuit unit is provided corresponding to each of the plurality of divided array units, and electrical connection is established in each of the divided array units, through an electrode located on each of the first surfaces of the first semiconductor substrate and the second semiconductor substrate, between the pixel array unit and the control circuit unit.
SYNCHRONIZED SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE, AND ELECTRONIC DEVICE
There is provided a solid-state imaging element in which a first substrate in which a pixel circuit including a pixel array unit is formed and a second substrate in which a plurality of signal processing circuits are formed are laminated, and a common reference clock is supplied to the plurality of signal processing circuits that are formed on the second substrate.
IMAGING MODULE
An imaging module of the invention includes an image-sensing device that has a light-receiving face, a substrate, a signal cable including a conductor, and a resin mold. A wiring of the substrate includes an electrode terminal and a cable terminal. The image-sensing device electrode is electrically connected to the electrode terminal via solder. The conductor is electrically connected to the cable terminal via solder. The resin mold coats the electrode surface, the cable terminal, the conductor, and the solder. On a plane of projection of the image-sensing device when viewed in a direction from the image-sensing device to the signal cable, the substrate, the resin mold, and the signal cable are disposed inside an outline of the image-sensing device.
Solid-state imaging device with layered microlenses and method for manufacturing same
A solid-state imaging device includes: a first lens layer; and a second lens layer, wherein the second lens layer is formed at least at a periphery of each first microlens formed based on the first lens layer, and the second lens layer present at a central portion of each of the first microlenses is thinner than the second lens layer present at the periphery of the first microlens or no second lens layer is present at the central portion of each of the first microlenses.
Dynamic, single photodiode pixel circuit and operating method thereof
The invention relates to pixel circuit and an operating method thereof, comprising—a front-end circuit (1) comprising a single photodiode (PD) and having an output (4), said front-end circuit (1) being configured for delivering on said output a photoreceptor signal derived from a light exposure of said single photodiode (PD);—a transient detector circuit (2) configured for detecting a change in said photoreceptor signal delivered on said output (4);—an exposure measurement circuit (3) configured for measuring said photoreceptor signal delivered on said output (4) upon detection by the transient detector circuit (2) of a change in the photoreceptor signal. The invention also relates to an image sensor comprising a plurality of pixel circuits
Imaging device, imaging method, electronic apparatus, and onboard electronic apparatus
The present disclosure relates to an imaging device, an imaging method, an electronic apparatus, and an onboard electronic apparatus for suppressing the flicker caused by light sources over a wide range of frequencies. With the present technology, multiple images are captured consecutively at uneven intervals in a single-frame period of a video before being blended. This removes the flicker efficiently. The uneven capture timing in the single-frame period is made the same for multiple frames. This makes it possible to prevent low-frequency flicker from getting higher in frequency. The present disclosure may be applied to onboard cameras, for example.
Image and/or video transmission using backscatter devices
Examples described herein include systems, devices, and methods for backscattering carrier signals in accordance with pixel values of an image and/or video. Signals having a property proportionate to pixel values may be converted into a pulse-containing waveform having pulses whose widths and/or duty cycles are determined based on the pixel values. Backscatter transmitters may backscatter a carrier signal in accordance with the pulse-containing waveform to provide the pixel values to a receiver. In this manner, video transmission at low power and/or battery-free operation may be provided.