Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

Provided is a hyperspectral sensor including a spectral angle converting unit configured to convert an angle of incident light differently according to a wavelength, a diffraction unit configured to selectively diffract the incident light according to an incident angle and a wavelength, a focusing optics including at least one lens, and configured to collect diffracted light passing through the diffraction unit, and an image sensor configured to acquire an image passing through the focusing optics and formed on a focal plane, wherein the diffraction unit includes a volume Bragg grating having a periodic refractive index distribution therein.

Digital camera systems and methods are described that provide a color digital camera with direct luminance detection. The luminance signals are obtained directly from a broadband image sensor channel without interpolation of RGB data. The chrominance signals are obtained from one or more additional image sensor channels comprising red and/or blue color band detection capability. The red and blue signals are directly combined with the luminance image sensor channel signals. The digital camera generates and outputs an image in YCrCb color space by directly combining outputs of the broadband, red and blue sensors.

An image sensor, a camera module, and an electronic device are provided. The image sensor includes a pixel array and a control circuit. The pixel array includes a light sensing area and an imaging area. The light sensing area is configured to detect an illumination intensity, and the imaging area is configured to acquire an image. The control circuit is configured to receive a first instruction to control the light sensing area to detect an illumination intensity, and to receive a second instruction to control the imaging area to acquire an image.

A signal separation method, a pixel unit, and a pixel array are provided. The method comprises: determining a first threshold voltage between a first primary node of at least two primary nodes that stores first radiation charges and an adjacent subsequent-stage and controlling, when a second primary node of the at least two primary nodes that stores second radiation charges is electrically connected with an adjacent subsequent-stage node, a second threshold voltage between the second primary node and the adjacent subsequent-stage node so that echo radiation charges in the second radiation charges are transferred to the subsequent-stage The second threshold voltage is equal to the first threshold voltage; the first threshold voltage is used to make the background radiation charges included in the first radiation charges fully or partially remain in the first primary node when the first primary node is electrically connected with the subsequent-stage node.

A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

A photoelectric conversion element including a first electrode and a second electrode that are disposed to face each other and a photoelectric conversion layer that is provided between the first electrode and the second electrode. The photoelectric conversion layer contains at least a subphthalocyanine or a subphthalocyanine derivative, and a carrier dopant, in which the carrier dopant has a concentration of less than 1% by volume ratio to the subphthalocyanine or the subphthalocyanine derivative.

Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

An imaging element comprises a first communication interface that is incorporated in the imaging element and outputs first image data based on image data obtained by imaging a subject to an external processor, a memory that is incorporated in the imaging element and stores the image data, and a second communication interface that is incorporated in the imaging element and outputs second image data based on the image data stored in the memory to the external processor, in which an output method of the first communication interface and an output method of the second communication interface are different.

An imaging device including pixels having a photoelectric converter including a first and second electrode, a photoelectric conversion layer; a charge accumulation region electrically connected to the first electrode; and a signal detection circuit. The photoelectric converter is applied with a voltage between the first electrode and the second electrode, and the photoelectric converter has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. A difference between the first voltage and the second voltage is 0.5 V or more, and the voltage supply circuit supplies a voltage between the first voltage and the second voltage to the second electrode in a non-exposure period.