A pixel array includes pixel cells, each including photodiodes. A source follower is coupled to generate an image signal in response image charge generated by the photodiodes. A first row select transistor is coupled to the source follower to output the image signal of the pixel cell. Pixel cells are organized into columns including a first column and a second column. The first row select transistors of the pixel cells of the first and second columns of pixel cells are coupled to first and second column bitlines, respectively. The pixel cells of the second column of pixel cells further include a second row select transistor coupled to the source follower to output the respective image signal to the first column bitline.

A driving method of a semiconductor device that takes three-dimensional images with short duration is provided. In a first step, a light source starts to emit light, and first potential corresponding to the total amount of light received by a first photoelectric conversion element and a second photoelectric conversion element is written to a first charge accumulation region. In a second step, the light source stops emitting light and second potential corresponding to the total amount of light received by the first photoelectric conversion element and the second photoelectric conversion element is written to a second charge accumulation region. In a third step, first data corresponding to the potential written to the first charge accumulation region is read. In a fourth step, second data corresponding to the potential written to the second charge accumulation region is read.

An image sensor includes: a first pixel having a first photoelectric conversion unit that photoelectrically converts light to generate a charge, a first accumulation unit that accumulates the charge generated by the first photoelectric conversion unit, and a first output unit that is connected to the first accumulation unit; a second pixel having a second photoelectric conversion unit that photoelectrically converts light to generate a charge, a second accumulation unit that accumulates the charge generated by the second photoelectric conversion unit, and a second output unit that is connected to and disconnected from the second accumulation unit via a second connection unit; and an adjustment unit that adjusts capacitances of the first accumulation unit and the second accumulation unit if a signal based on the charges generated by the first photoelectric conversion unit and the second photoelectric conversion unit is output from the first output unit.

Disclosed is an image sensor. The image sensor includes an active pixel sensor array including first to fourth pixel units sequentially arranged in a column direction, and each of the first to fourth pixel units is composed of a plurality of pixels. A first pixel group including the first and second pixel units is connected to a first column line, and a second pixel group including the third pixel unit and the fourth pixel unit is connected to a second column line. The image sensor includes a correlated double sampling circuit including first and second correlated double samplers and configured to convert a first sense voltage sensed from a selected pixel of the first pixel group and a second sense voltage sensed from a selected pixel of the second pixel group into a first correlated double sampling signal and a second correlated double sampling signal, respectively.

A photo sensor includes a plurality of pixel blocks, each including one or more anchor pixels and one or more non-anchor pixels. The anchor pixels produce first sensor signals and the non-anchor pixels produce second sensor signals. An amplifier circuit amplifies the first and second sensor signals. A variable bit-depth analog to digital converter (ADC) circuit quantizes amplified versions of the first sensor signals into first digitized sensor signals with a first bit-depth. The ADC circuit also quantizes amplified versions of the second sensor signals into second digitized sensor signals with a second bit-depth that is lower than the first bit depth. The second bit-depth may be selected based on anchor pixel statistics derived from the one or more first digitized sensor signals.

The present technology relates to an imaging apparatus and method, and an image processing apparatus and method that make it possible to control the resolution of a detection image. A resolution is set, and a restoration matrix is set including coefficients used when a restored image is restored from output pixel values of a plurality of pixel output units, of an imaging element including the plurality of pixel output units that receives incident light entering without passing through either an imaging lens or a pinhole, and each outputs one detection signal indicating an output pixel value modulated by an incident angle of the incident light, depending on the resolution set. The present disclosure can be applied to, for example, an imaging apparatus, an image processing apparatus, an information processing apparatus, an electronic device, a computer, a program, a storage medium, a system, and the like.

Disclosed are an image sensor, a method of sensing an image, and an electronic device including the image sensor. The image sensor includes a pixel array including a plurality of pixels, a readout circuit to read out a plurality of pixel signals received from the pixel array; and a controller to provide control signals to the pixel array, which includes three or more regions, each of the three or more regions having different sizes and control a processing of the plurality of pixel signals read out from the readout circuit based on the control signals provided to the pixel array to obtain an image, wherein the image has a first resolution in a first region, among the three or more regions, and a second resolution in a second region, among the three or more regions, the second resolution being lower than the first resolution.

A time-of-flight pixel array includes photodiodes that generate charge in response to incident reflected modulated light. First transfer transistors transfer a first portion of the charge from the photodiodes in response to a first modulation signal and second transfer transistors transfer a second portion of the charge from the photodiodes in response to a second modulation signal, which is an inverted first modulation signal. First floating diffusions are coupled to the first transfer transistors. A binning transistor is coupled between one of the first floating diffusions and another one of the first floating diffusions. A first memory node is coupled to one of the first floating diffusions through a first sample and hold transistor and a second memory node is coupled to another one of the first floating diffusions through a second sample and hold transistor.

The disclosure provides multimode configurable spectrometers, a method of operating a multimode configurable spectrometer, and an optical monitoring system. In one embodiment the multimode configurable spectrometer includes: (1) an optical sensor configured to receive an optical input and convert the optical input to electrical signals, wherein the optical sensor includes multiple active pixel regions for converting the optical input to the electrical signals, (2) conversion circuitry, having multiple selectable converting circuits, that is configured to receive and convert the electrical signals to a digital output according to a selected one of the selectable converting circuits, and (3) a sensor controller configured to set a synchronized operating mode to direct operation of the optical sensor and select, based on the synchronized operating mode, at least one of the selectable converting circuits to provide the digital output.

Methods and apparatus to obtain exposure data for media exposure environment(s) are disclosed. An example apparatus disclosed herein includes processor circuitry to determine audience identification information and content identifying data.