Patent classifications
H04N5/347
IMAGE SENSOR
An image sensor includes a first layer including a pixel array region having a plurality of pixels arranged in a plurality of row lines and a plurality of column lines; and a second layer including a row driver selecting at least a portion of the plurality of row lines, generating pixel control signals driving selected row lines, and outputting the pixel control signals to control signal lines, wherein the selected row lines share the control signal lines, at a branch point of the first layer, the selected row lines receive the pixel control signals from the control signal lines in common, and the pixel control signals simultaneously drive the selected row lines.
Image sensor and image-capturing device with first and second amplifiers connectable to each other's current sources
An image sensor including a pixel that includes: a first photoelectric conversion unit and a second photoelectric conversion unit, each of which generates an electric charge through photoelectric conversion of light; an output unit that outputs a first signal generated based upon the electric charge generated in the first photoelectric conversion unit and a second signal generated based upon an electric charge generated in the second photoelectric conversion unit; and an adjustment unit that adjusts a capacitance at the output unit upon outputting of the first signal and the second signal from the output unit.
IMAGING DEVICE
Provided is an imaging device (1) capable of improving quality of an image captured using a color filter. An imaging device according to an embodiment includes a pixel array (110) including a plurality of pixel blocks (130) each including 6×6 pixels, and each pixel block includes a first pixel on which a first optical filter that transmits light in a first wavelength range is provided, a second pixel on which a second optical filter that transmits light in a second wavelength range is provided, a third pixel on which a third optical filter that transmits light in a third wavelength range is provided, and a fourth pixel on which a fourth optical filter that transmits light in a fourth wavelength range is provided. The first pixels are alternately arranged in each of a row direction and a column direction of the arrangement, one second pixel, one third pixel, and one fourth pixels are alternately arranged in each row and each column of the arrangement, and the pixel block further includes a line including at least one second pixel, one third pixel, and one fourth pixel in a first oblique direction that is parallel to a diagonal of the pixel block of the arrangement, and a line including at least one second pixel, one third pixel, and one fourth pixel in a second oblique direction that is parallel to a diagonal of the pixel block and is different from the first oblique direction.
Solid state imaging device capable of acquiring a desired image without using a frame memory, imaging apparatus, and imaging method
Provided are a solid state imaging device, an imaging apparatus, and an imaging method that may acquire a desired image without using a frame memory. The solid state imaging device includes: a sensor unit that generates pulses at a frequency in accordance with a frequency of photon reception; a count unit that generates an image signal by counting the number of signals generated from the sensor unit; and a processing unit that performs a predetermined process on a count value obtained in acquisition of a first image signal, and the count unit combines a second image signal and a value obtained by performing a predetermined process on the count value obtained in the acquisition of the first image signal to generate a third image signal.
Image sensor and operating method thereof
An image sensor includes: a pixel array including a plurality of pixels divided into a plurality of binning areas; a readout circuit configured to, from the plurality of binning areas, receive a plurality of pixel signals including a first sensing signal of first pixels and a second sensing signal of second pixels during a single frame period and output a first pixel value corresponding to the first pixels and a second pixel value corresponding to the second pixels based on the plurality of pixel signals; and an image signal processor configured to generate first image data based on a plurality of first pixel values corresponding to the plurality of binning areas, generate second image data based on a plurality of second pixel values corresponding to the plurality of binning areas, and generate output image data by merging the first image data with the second image data.
SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE
The present disclosure relates to a solid-state imaging device that makes it possible to suppress deterioration of phase difference information, and an electronic device.
There is provided a solid-state imaging device including a pixel array unit in which a plurality of pixels is two-dimensionally arrayed. The plurality of pixels includes a phase difference pixel for phase difference detection, the pixel array unit has an array pattern in which pixel units including neighboring pixels of a same color are regularly arrayed, and the phase difference pixel is partially not added when horizontal/vertical addition is performed on a pixel signal of a predetermined pixel in a horizontal direction and a pixel signal of a predetermined pixel in a vertical direction, in reading the plurality of pixels. The present disclosure can be applied to, for example, a CMOS image sensor having a phase difference pixel.
DEPTH SENSOR AND IMAGE SIGNAL PROCESSOR FOR CHANGING BINNING MODE
A depth sensor for measuring a distance to an object and an image signal processor configured to change a binning mode based on ambient light are provided. A method for operating a depth sensor for measuring a distance to an object includes outputting a pixel signal from at least one depth pixel included in a pixel array, generating ambient light information based on an intensity of ambient light outside the depth sensor, the intensity of the ambient light being measured using the pixel signal, and setting a binning mode of the depth sensor to an analog binning mode or a digital binning mode based on the ambient light parameter value.
Bitline control supporting binning mode for pixel arrays with phase detection autofocus and image sensing photodiodes
An imaging device includes a pixel array including pixel circuits arranged into rows and columns. Each bitline of a plurality of bitlines is coupled to a respective column of pixel circuits of the pixel array. The plurality of bitlines is grouped into pairs of bitlines. A plurality of binning circuits is coupled to the plurality of bitlines. Each binning circuit is coupled to a respective pair of bitlines and is responsive to a multi-mode select signal. Each binning circuit is configured to output a binned signal responsive to the first and second bitlines of the respective bitline pair in a first mode. Each binning circuit is configured to output a first signal from a first bitline of the respective bitline pair in a second mode. Each binning circuit is configured to output a second signal from the second bitline of the respective bitline pair in a third mode.
Imaging device and electronic apparatus for effective pixel signal reading
An imaging device according to the present disclosure includes a plurality of pixel units each including a first pixel unit and a second pixel unit and a vertical signal line, in which each of the first pixel unit and the second pixel unit includes an amplification transistor, a selection transistor connected between the amplification transistor and the vertical signal line, and a connection unit that selectively connects between a common connection node of the amplification transistor and the selection transistor of the first pixel unit and a common connection node of the amplification transistor and the selection transistor of the second pixel unit.
Electronic devices capable of detecting images in low-light environment
An electronic device includes a reset circuit and a first image sensing circuit. The reset circuit is used to receive a reset signal and includes a plurality of transistors. The first image sensing circuit is coupled to the reset circuit and includes a photodiode, a first transistor and a second transistor. The photodiode has a first terminal. The first transistor has a first terminal coupled to the first terminal of the photodiode, and a second terminal. The second transistor has a first terminal coupled to the second terminal of the first transistor, and a second terminal configured to receive a row selection signal.