The reading accuracy of an imaging device is increased. Clear image capturing is performed even in the case where the luminance is high. A reading circuit of the imaging device includes an amplifier portion and a conversion portion. The amplifier portion amplifies a potential difference between a first signal and a second signal that are sequentially input and outputs the amplified difference to the conversion portion. The conversion portion converts the output potential of the amplifier portion into a digital value. The amplifier portion is reset on the basis of a first reference potential and the first signal and amplifies the potential difference on the basis of a second reference potential that is different from the first reference potential and the second signal.

An image sensor includes a pixel having an internal capacitor. Each of a plurality of pixels of the image sensor includes a photodetection circuit and an analog-to-digital converter (ADC). The photodetection circuit generates a detection signal. The ADC converts the detection signal using a ramp signal. The photodetection circuit includes a photodiode, a floating diffusion node and an overflow transistor. The floating diffusion node accumulates photocharges generated by the photodiode and includes a parasitic capacitor. The overflow transistor electrically connects the floating diffusion node to a first internal capacitor of the ADC.

An imaging device includes a plurality of photodiodes arranged in a photodiode array to generate charge in response to incident light. The plurality of photodiodes includes first and second photodiodes. A shared floating diffusion receives charge transferred from the first and second photodiodes. An analog to digital converter (ADC) performs a first ADC conversion to generate a reference readout in response to charge in the shared floating diffusion after a reset operation. The ADC is next performs a second ADC conversion to generate a first half of a phase detection autofocus (PDAF) readout in response to charge transferred from the first photodiode to the shared floating diffusion. The ADC then performs a third ADC conversion to generate a full image readout in response to charge transferred from the second photodiode combined with the charge transferred previously from the first photodiode in the shared floating diffusion.

An image sensor includes a pixel array including a plurality of pixels; a row driver configured to control the plurality of pixels; and an analog-to-digital converter configured to digitize a result sensed by the pixel array to generate a first image, wherein the pixel array includes: first pixel groups, wherein each first pixel group of the first pixel groups includes first white pixels and first color pixels among the plurality of pixels; and second pixel groups, wherein each second pixel group of the second pixel groups includes second white pixels and second color pixels among the plurality of pixels, and wherein first pixel data of the first image are generated based on the first white pixels and the first color pixels, and second pixel data of the first image are generated based on the second color pixels.

A quantitative pulse count (event detection) algorithm with linearity to high count rates is accomplished by combining a high-speed, high frame rate camera with simple logic code run on a massively parallel processor such as a GPU or a FPGA. The parallel processor elements examine frames from the camera pixel by pixel to find and tag events or count pulses. The tagged events are combined to form a combined quantitative event image.

An image sensor includes: a photoelectric conversion unit that photoelectrically converts light to generate an electric charge; a holding unit that holds the electric charge generated by the photoelectric conversion unit; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; a first transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit; and a second transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit via the holding unit.

Provided is a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. The solid-state imaging device includes a first pixel separation region that separates a plurality of unit pixels including two or more subpixels, a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.

An imaging panel is provided. The imaging panel includes a photoelectric conversion element, a pixel, a first conductive film, a second conductive film, a third conductive film, a fourth conductive film, and a fifth conductive film. The pixel includes a pixel circuit and supplies an image signal. The first conductive film is supplied with the image signal and the photoelectric conversion element includes a first terminal connected to the second conductive film and a second terminal connected to the pixel circuit. The pixel circuit includes a first switch, a second switch, a third switch, a transistor, and a capacitor. The first switch includes a terminal connected to the second terminal of the photoelectric conversion element and a terminal connected to a node. The transistor includes a gate electrode connected to the node and a first electrode connected to the third conductive film. The second switch includes a terminal connected to a second electrode of the transistor and a terminal connected to the first conductive film. The third switch includes a terminal connected to the fourth conductive film and a terminal connected to the node. The capacitor includes a first electrode connected to the node and a second electrode connected to the fifth conductive film.

To shorten time required for AD conversion when a solid-state imaging element that detects presence or absence of an address event further captures image data. In a detection block, a first pixel that generates a first analog signal by photoelectric conversion and a second pixel that generates a second analog signal by photoelectric conversion are arrayed. A first analog-digital converter converts the first analog signal into a digital signal on the basis of whether or not a change amount of an incident light amount of the detection block exceeds a predetermined threshold. A second analog-digital converter converts the second analog signal into a digital signal on the basis of whether or not the change amount exceeds the threshold.

A solid-state imaging device includes a plurality of pixel cells, each of the pixel cells including a light receiving element, a floating diffusion, a first source follower circuit, and a second source follower circuit. The plurality of pixel cells are connected to an output signal line. The light receiving element photoelectrically converts incident light, and stores a signal charge. The floating diffusion converts the signal charge read out of the light receiving element into a signal voltage. The first source follower circuit is connected to the floating diffusion, and outputs an output voltage corresponding to the signal voltage. The second source follower circuit is connected in series with the first source follower circuit, and outputs a pixel signal corresponding to the output voltage.