Disclosed is an image sensor. The image sensor includes an active pixel sensor array including first to fourth pixel units sequentially arranged in a column direction, and each of the first to fourth pixel units is composed of a plurality of pixels. A first pixel group including the first and second pixel units is connected to a first column line, and a second pixel group including the third pixel unit and the fourth pixel unit is connected to a second column line. The image sensor includes a correlated double sampling circuit including first and second correlated double samplers and configured to convert a first sense voltage sensed from a selected pixel of the first pixel group and a second sense voltage sensed from a selected pixel of the second pixel group into a first correlated double sampling signal and a second correlated double sampling signal, respectively.

There is provided an imaging device, comprising differential amplifier circuitry comprising a first amplification transistor and a second amplification transistor; and a plurality of pixels including a first pixel and a second pixel, wherein the first pixel includes a first photoelectric converter, a first reset transistor, and the first amplification transistor, and wherein the second pixel includes a second photoelectric converter, a second reset transistor, and the second amplification transistor, wherein the first reset transistor is coupled to a first reset voltage, and wherein the second reset transistor is coupled to a second reset voltage different than the first reset voltage.

An image sensor comprises: a pixel region including a plurality of microlenses arranged in a matrix, and a plurality of photoelectric conversion portions provided for each of the microlenses; a plurality of amplifiers that apply a plurality of different gains to signals output from the pixel region; and a scanning circuit that scans the pixel region so that a partial signal and an added signal are read out, the partial signal being a signal from some of the plurality of photoelectric conversion portions, and the added signal being a signal obtained by adding the signals from the plurality of photoelectric conversion portions.

Correlated double sampling column-level readout of an image sensor pixel may be provided by a charge transfer amplifier that is configured and operated to itself provide for both correlated-double-sampling and amplification of floating diffusion potentials read out from the pixel onto a column bus after reset of the floating diffusion (I) but before transferring photocharge to the floating diffusion (the reset potential) and (ii) after transferring photocharge to the floating diffusion (the transfer potential). A common capacitor of the charge transfer amplifier may sample both the reset potential and the transfer potential such that a change in potential (and corresponding charge change) on the capacitor represents the difference between the transfer potential and reset potential, and the magnitude of this change is amplified by the charge change being transferred between the common capacitor and a second capacitor selectively coupled to the common capacitor.

The memory control unit 12 causes a memory unit 13 to store input image data divided into a first block having pixel data of a predetermined number of pixels in a line direction for a plurality of lines, a second block having pixel data of a predetermined number of pixels following the first block in the line direction for a plurality of lines including a part of the lines of the first block, and a third block having pixel data of a predetermined number of pixels following in the line direction for a plurality of lines including a line different from the line included in the second block in the first block. The arithmetic processing unit 15 calculates an interpolation position that is a position before image conversion corresponding to a pixel position after image conversion, the memory control unit 12 reads the pixel data of the first to third blocks including the pixel data of the peripheral pixel of the interpolation position from the memory unit 13, and the interpolation processing unit 14 generates the pixel data of the interpolation position by the interpolation processing using the read peripheral pixel. The processing speed of the image processing can be improved.

A timing of the readout from an imaging circuit is controlled from the outside of the imaging circuit. An exposure control signal receiving section is configured to receive, from outside, an exposure control signal that controls a timing at which plural pixels are exposed. A control signal receiving section is configured to receive, from the outside, a readout control signal that controls a timing at which the plural pixels are read out. A vertical driving control signal generating section is configured to generate, on the basis of the exposure control signal and the readout control signal, a vertical driving control signal that generates a control signal for exposure and readout with respect to each of pixel columns of a pixel section. A vertical driving circuit is configured to drive and control each of the pixel columns according to the vertical driving control signal.

An imaging device includes a plurality of pixels that receives incident light entering from an object after passing through neither an imaging lens nor a pinhole, and each outputs a detection signal indicating an output pixel value modulated in accordance with an incident angle of the incident light. The imaging device is attached to a vehicle so that a light receiving surface faces a side of the vehicle, and the average of the centroids of incident angle directivities indicating directivities of the plurality of pixels with respect to the incident angle of the incident light deviates in one direction from the center of the pixel. The present technology can be applied to an electronic sideview mirror, for example.

In a light receiving device, a light receiving element includes a first photoelectric conversion unit (PD) that converts light into electric charges, a first electric charge storage unit (MEM) to which the electric charges are transferred from the first photoelectric conversion unit, a first distribution gate, a second electric charge storage unit (MEM) to which the electric charges are transferred from the first photoelectric conversion unit, and a second distribution gate, in which the first and second distribution gates are provided at positions axially symmetric to each other with respect to a first center axis extending so as to pass through the center of the first photoelectric conversion unit, in a direction intersecting the column direction at a predetermined angle, when viewed from above the semiconductor substrate.

Provided is a depth sensor which includes a pixel and a row driver that controls the pixel, the pixel including a first tap, a second tap, a third tap, and a fourth tap, an overflow transistor, and a photoelectric conversion device. Each of the first tap, the second tap, the third tap, and the fourth tap includes a photo transistor, a transfer transistor, and a readout circuit. In a first integration period of a global mode, the row driver activates a second photo gate signal controlling the photo transistor of the second tap and a third photo gate signal controlling the photo transistor of the third tap. In a second integration period of the global mode, the row driver activates a first photo gate signal controlling the photo transistor of the first tap and a fourth photo gate signal controlling the photo transistor of the fourth tap.

An image processing device is disclosed. The image processing device includes at least one first pixel having a first sensitivity, a second pixel having a second sensitivity different from the first sensitivity, a processor, and a synthesizer. The processor calculates a sampling position of the at least one first pixel and a sampling position of the second pixel, determines a reference position and adjusts the sampling position of the at least one first pixel or the second pixel based on the reference position.