Patent classifications
H04N5/345
Sample and hold switch driver circuitry with slope control
A switch driver circuit includes a first transistor coupled between a voltage supply and a first output node. A second transistor is coupled between the first output node and a first discharge node. A first slope control circuit is coupled to the first discharge node to discharge the first discharge node at a first slope. A third transistor is coupled between the voltage supply and a second output node. A fourth transistor is coupled between the second output node and a second discharge node. A second slope control circuit coupled to the second discharge node to discharge the second discharge node at a second slope. The first and second slopes are mismatched.
Pixel sensor, control method thereof and detector
The present disclosure relates to a pixel sensor, a control method thereof, and a detector. The pixel sensor includes a photoelectric conversion circuit, an energy storage circuit, a reset circuit, a first switch circuit, and a second switch circuit; wherein, the energy storage circuit is connected to the photoelectric conversion circuit, and the photoelectric conversion circuit is further connected to a second power supply; a control end of the reset circuit is connected to a second scanning signal end; the first switch circuit is connected between the first power supply and a first node, and a control end thereof is connected to the first end of the energy storage circuit; second switch circuit is connected between the first node and a signal output end, and a control end thereof is connected to a first scanning signal end.
Imaging devices and decoding methods thereof
An imaging device includes a pixel section having a plurality of pixels, and a signal processor configured to apply control signals to the pixel section according to a Gray code coding scheme to generate a first pixel signal, a second pixel signal, and a third pixel signal based on light reflected from an object. The signal processor is configured to calculate a distance to the object based on the first pixel signal, the second pixel signal, and the third pixel signal.
Device and method for forming higher resolution image of image target
An image capturing device for forming a higher resolution image of an image target having a plurality of pixel areas respectively is disclosed. The image capturing device includes an image sensor having a plurality of sensing pixels corresponding to the plurality of pixel areas respectively; an in-plane motion motor coupled to the image sensor, and configured to cause the image sensor to take a plurality of raw images related to the image target one by one; and a controller configured to synthesize the plurality of raw images into the higher resolution image, wherein: the image sensor has a sensor surface; the in-plane motion motor incrementally moves a plurality of times the image sensor, each time with a distance equal to 1/N of a pixel pitch of one of the plurality of sensing pixels, along a first direction parallel to the sensor surface to respectively capture the plurality of raw images for forming the higher resolution image; and N is a positive integer being larger than 1.
SOLID-STATE IMAGING APPARATUS AND ELECTRONIC
The present technology relates to solid-state imaging apparatuses and electronic equipment, each of which is capable of contributing to an increased sense of resolution at an outer peripheral portion of an image photographed by using a wide-angle lens. The solid-state imaging apparatus includes a pixel array section in which a plurality of pixels is arranged such that a pixel pitch becomes smaller at a greater distance away from a central portion toward an outer peripheral portion. The present technology is applicable to, for example, solid-state imaging apparatuses and the like suited for photographing by using a wide-angle lens such as a fisheye lens used in a 360-degree panoramic camera.
Electronic apparatus, method for controlling electronic apparatus, and control program
To reduce power consumed when the display magnification of an image is changed. A digital camera includes a display unit having a first display region in which a first image is displayed and a second display region in which a second image is displayed, an image capture unit having a first image capture region in which first image data indicating the first image is generated and a second image capture region in which second image data indicating the second image is generated, magnification change units that change the display magnifications of the first and second images displayed on the display unit, and an image capture control unit that when the magnification change units change the display magnifications, changes the charge accumulation conditions or reading conditions of the first and second image capture regions.
Method and system for image based occupancy detection
An image sensor includes an active pixel array including a number of pixels and image sensor control circuitry configured to perform a read operation only on a subset of the pixels of the active pixel array such that pixels not in the subset remain inactive. By reading out only the subset of pixels in the active pixel array and keeping the remaining pixels inactive, the temperature of the active pixel array may be reduced compared to a conventional read out process, thereby reducing thermal noise in the resulting pixel data.
IMAGING DEVICE
An imaging device according to the present disclosure includes: a plurality of pixels; a memory unit; a memory control unit; and a bus interface. The plurality of pixels is formed in any of a plurality of semiconductor substrates that is stacked. The plurality of pixels is each configured to perform photoelectric conversion. The memory unit is formed in any of the plurality of semiconductor substrates. The memory unit is configured to store image data generated on the basis of a result of the photoelectric conversion. The memory control unit is formed in any of the plurality of semiconductor substrates. The memory control unit is configured to perform a read operation on the basis of first internal address information. The read operation is for reading, from the memory unit, image data corresponding to the first internal address information among pieces of the image data. The bus interface is formed in any of the plurality of semiconductor substrates. The bus interface is configured to perform communication for first address information with an external device, supply the memory control unit with the first internal address information, and transmit the image data read by the memory control unit to the external device.
HARDWARE IMPLEMENTATION OF SENSOR ARCHITECTURE WITH MULTIPLE POWER STATES
In one implementation, an event sensor includes a plurality of pixels and an event compiler. The plurality of pixels are positioned to receive light from a scene disposed within a field of view of the event sensor. Each pixel is configured to have an operational state that is modified by control signals generated by a respective state circuit. The event compiler is configured to output a stream of pixel events. Each respective pixel event corresponds to a breach of a comparator threshold related to an intensity of incident illumination. Each control signal is generated based on feedback information that is received from an image pipeline configured to consume image data derived from the stream of pixel events.
HIGH DYNAMIC RANGE CMOS IMAGE SENSOR DESIGN
A pixel cell includes a first subpixel and a plurality of second subpixels. Each subpixel includes a photodiode to photogenerate image charge in response to incident light. Image charge is transferred from the first subpixel to a floating diffusion through a first transfer transistor. Image charge is transferred from the plurality of second subpixels to the floating diffusion through a plurality of second transfer transistors. An attenuation layer is disposed over the first subpixel. The first subpixel receives the incident light through the attenuation layer. The plurality of second subpixels receive the incident light without passing through the attenuation layer. A dual floating diffusion (DFD) transistor is coupled to the floating diffusion. A capacitor is coupled to the DFD transistor.