Provided is a method of forming a metal oxide layer may include forming a parent metal oxide layer on the substrate structure; changing the parent metal oxide layer into a cation-exchanged metal oxide layer through a cation exchange reaction between cations in the parent metal oxide layer and cations in the reaction solution by contacting the parent metal oxide layer with a reaction solution containing these latter cations; and performing a heat treatment process on the cation-exchanged metal oxide layer.

Provided is a method of forming a metal oxide layer may include forming a parent metal oxide layer on the substrate structure; changing the parent metal oxide layer into a cation-exchanged metal oxide layer through a cation exchange reaction between cations in the parent metal oxide layer and cations in the reaction solution by contacting the parent metal oxide layer with a reaction solution containing these latter cations; and performing a heat treatment process on the cation-exchanged metal oxide layer.

A solar cell and a photovoltaic module. The solar cell includes: a substrate including a front surface and a back surface, a tunneling layer formed on the back surface of the substrate, a doped conductive layer formed on the tunneling layer, an intrinsic polycrystalline silicon layer formed on the doped conductive layer, a first passivation layer formed on the intrinsic polycrystalline silicon layer, and a first electrode formed on the first passivation layer. The first electrode is in contact with the intrinsic polycrystalline silicon layer by running through the first passivation layer and is spaced apart from the tunneling layer. The photovoltaic module includes the solar cell.

A solar cell and a photovoltaic module. The solar cell includes: a substrate including a front surface and a back surface, a tunneling layer formed on the back surface of the substrate, a doped conductive layer formed on the tunneling layer, an intrinsic polycrystalline silicon layer formed on the doped conductive layer, a first passivation layer formed on the intrinsic polycrystalline silicon layer, and a first electrode formed on the first passivation layer. The first electrode is in contact with the intrinsic polycrystalline silicon layer by running through the first passivation layer and is spaced apart from the tunneling layer. The photovoltaic module includes the solar cell.

In one aspect, a preparation method for a solar cell includes the following steps: sequentially forming a first silicon oxide layer, an intrinsic amorphous silicon layer, a phosphorosilicate glass layer and a second silicon oxide layer on the back surface of an n-type silicon substrate; removing the phosphorosilicate glass layer and the second silicon oxide layer in a partial region of the back surface of the n-type silicon substrate; subjecting the back surface of the n-type silicon substrate to boron diffusion; forming an isolation groove at the boundary between the boron-doped polycrystalline silicon layer and the phosphorus-doped polycrystalline silicon layer; and preparing a first electrode connected to the boron-doped polycrystalline silicon layer and a second electrode connected to the phosphorus-doped polycrystalline silicon layer.

In one aspect, a preparation method for a solar cell includes the following steps: sequentially forming a first silicon oxide layer, an intrinsic amorphous silicon layer, a phosphorosilicate glass layer and a second silicon oxide layer on the back surface of an n-type silicon substrate; removing the phosphorosilicate glass layer and the second silicon oxide layer in a partial region of the back surface of the n-type silicon substrate; subjecting the back surface of the n-type silicon substrate to boron diffusion; forming an isolation groove at the boundary between the boron-doped polycrystalline silicon layer and the phosphorus-doped polycrystalline silicon layer; and preparing a first electrode connected to the boron-doped polycrystalline silicon layer and a second electrode connected to the phosphorus-doped polycrystalline silicon layer.

A solar cell, a method for manufacturing the same, and a photovoltaic module are provided. The solar cell includes a substrate, first and second doped parts, and first electrodes. The substrate has a first surface including first regions and second regions arranged alternatingly in a first direction. Each of the first and second doped parts is located on a corresponding first and second region, respectively and is separated from each other. Each first electrode and a third doped part are located on the corresponding first doped part. On the first doped part, the third doped part is located on at least one side of the first electrode in the first direction and is separated from the adjacent first electrode. The first doped parts are doped with dope elements different from the second doped parts and the third doped parts.

A solar cell, a method for manufacturing the same, and a photovoltaic module are provided. The solar cell includes a substrate, first and second doped parts, and first electrodes. The substrate has a first surface including first regions and second regions arranged alternatingly in a first direction. Each of the first and second doped parts is located on a corresponding first and second region, respectively and is separated from each other. Each first electrode and a third doped part are located on the corresponding first doped part. On the first doped part, the third doped part is located on at least one side of the first electrode in the first direction and is separated from the adjacent first electrode. The first doped parts are doped with dope elements different from the second doped parts and the third doped parts.

The present application discloses a back-contact solar cell and a preparation method thereof. The back-contact solar cell includes: a semiconductor substrate; a tunnel oxide layer and a doped crystalline silicon layer, where the tunnel oxide layer is located in a first region, and the doped crystalline silicon layer is located on a surface of the tunnel oxide layer away from the semiconductor substrate; an intrinsic non-crystalline silicon layer and a doped non-crystalline silicon layer where the intrinsic non-crystalline silicon layer is located in a second region and extends on part of a surface of the doped crystalline silicon layer away from the tunnel oxide layer, and the doped non-crystalline silicon layer is located on a surface of the intrinsic non-crystalline silicon layer away from the semiconductor substrate; and an isolating structure including an isolating layer and an isolating groove.

The present application discloses a back-contact solar cell and a preparation method thereof. The back-contact solar cell includes: a semiconductor substrate; a tunnel oxide layer and a doped crystalline silicon layer, where the tunnel oxide layer is located in a first region, and the doped crystalline silicon layer is located on a surface of the tunnel oxide layer away from the semiconductor substrate; an intrinsic non-crystalline silicon layer and a doped non-crystalline silicon layer where the intrinsic non-crystalline silicon layer is located in a second region and extends on part of a surface of the doped crystalline silicon layer away from the tunnel oxide layer, and the doped non-crystalline silicon layer is located on a surface of the intrinsic non-crystalline silicon layer away from the semiconductor substrate; and an isolating structure including an isolating layer and an isolating groove.