The present invention relates to a solar cell and a method of manufacturing the same. The method of manufacturing the solar cell, according to the present invention, includes: a first step of forming a lower transparent resin layer on a lower cover glass; a second step of disposing a plurality of thin-film solar cells and a plurality of glass blocks on the lower transparent resin layer; a third step of forming an upper transparent resin layer on top of the plurality of thin-film solar cells and the plurality of glass blocks; and a fourth step of disposing an upper cover glass on the upper transparent resin layer to configure the solar cell, wherein, in the second step, the plurality of glass blocks are each disposed between the plurality of thin-film solar cells on the lower transparent resin layer.

A solar cell of an embodiment includes a p-electrode, a p-type light-absorbing layer containing a cuprous oxide and/or a complex oxide of cuprous oxides on the p-electrode, an n-type layer on the p-type light-absorbing layer, and an n-electrode, when a first region is a region of the p-type light-absorbing layer from an interface between the p-type light absorbing layer and n-type layer to a depth of 10 nm toward the p-electrode and a second region is a region of the p-type light-absorbing layer from the interface between the p-type light absorbing layer and the n-type layer to a depth of 100 nm toward the p-electrode excluding the first region, a maximum intensity of an intensity profile of a HAADF-STEM image of the first region is 95% or more and 105% or less of an average intensity of an intensity profile of a HAADF-STEM of the second region.

A perovskite material bypass diode and a manufacturing method therefor, a perovskite solar cell module and a manufacturing method therefor, and a photovoltaic module are disclosed by the present application, which relate to the technical field of photovoltaics, the difficulty of manufacturing the perovskite material bypass diode is reduced. The method for manufacturing the perovskite material bypass diode includes: providing a layer of a perovskite material layer, processing the perovskite material layer to form a P-type perovskite material region and an N-type perovskite material region, so that a perovskite material bypass diode is formed. The perovskite material bypass diode and the manufacturing method therefor, the perovskite solar cell module and the manufacturing method therefor, and the photovoltaic module provided by the present application are used to manufacture the photovoltaic module.

The invention relates to a concentrator photovoltaic module comprising a housing, a photovoltaic chip, at least two electrical contacts for contacting the photovoltaic chip, and a transparent cover. The housing has a recess forming a receiving tray with a recessed bottom portion for receiving the photovoltaic chip. The receiving tray has side walls with at least a first and a second reflective region. The first reflective region is oriented at a first angle with respect to a horizontal plane of the housing and the second reflective region is oriented at a second angle with respect to the horizontal plane of the housing. The first angle is different from the second angle.

The invention relates to a concentrator photovoltaic module comprising a housing, a photovoltaic chip, at least two electrical contacts for contacting the photovoltaic chip, and a transparent cover. The housing has a recess forming a receiving tray with a recessed bottom portion for receiving the photovoltaic chip. The receiving tray has side walls with at least a first and a second reflective region. The first reflective region is oriented at a first angle with respect to a horizontal plane of the housing and the second reflective region is oriented at a second angle with respect to the horizontal plane of the housing. The first angle is different from the second angle.

Embodiments of the present disclosure relate to a solar cell and a photovoltaic module. The solar cell includes a thin-film solar cell and a bottom cell stacked in a first direction. The bottom cell has a stacked structure in the first direction including: a transparent conductive layer, a first doped conductive layer, an intrinsic amorphous silicon layer, a substrate, a selective passivation layer, and one or more electrodes. The selective passivation layer covers a portion of a surface of the substrate away from the intrinsic amorphous silicon layer and includes a plurality of passivation contact structures arranged at intervals in a second direction. Each passivation contact structure includes a tunneling layer and a second doped conductive layer stacked in the first direction. The electrodes are formed on a surface of the selective passivation layer away from the substrate and are in ohmic contact with second doped conductive layers.

Embodiments of the present disclosure relate to a solar cell and a photovoltaic module. The solar cell includes a thin-film solar cell and a bottom cell stacked in a first direction. The bottom cell has a stacked structure in the first direction including: a transparent conductive layer, a first doped conductive layer, an intrinsic amorphous silicon layer, a substrate, a selective passivation layer, and one or more electrodes. The selective passivation layer covers a portion of a surface of the substrate away from the intrinsic amorphous silicon layer and includes a plurality of passivation contact structures arranged at intervals in a second direction. Each passivation contact structure includes a tunneling layer and a second doped conductive layer stacked in the first direction. The electrodes are formed on a surface of the selective passivation layer away from the substrate and are in ohmic contact with second doped conductive layers.

A thin film semiconductor device includes a substrate, a stack of thin film material layers on the substrate, and a scribe fill material in the gap. The stack includes a scribe gap in at least one thin film material layer of the stack. The scribe fill material includes one or more coloring elements selected according to a difference between a baseline optical characteristics spectrum for the stack and an optical characteristics spectrum for thin film material remaining in the scribe gap.

A thin film semiconductor device includes a substrate, a stack of thin film material layers on the substrate, and a scribe fill material in the gap. The stack includes a scribe gap in at least one thin film material layer of the stack. The scribe fill material includes one or more coloring elements selected according to a difference between a baseline optical characteristics spectrum for the stack and an optical characteristics spectrum for thin film material remaining in the scribe gap.

A layer stack for thin-film photovoltaic modules includes a back electrode, an absorber, a buffer/i-layer, a front electrode and an interlayer which are sequentially stacked on a corresponding substrate from bottom up by vacuum coating deposition. The layer stack is divided by P1, P2 and P3 structure lines respectively. A conductive metal grid is embedded in the layer stack, and the metal grid is deposited on the buffer/i-layer before or after the P2 structure line. According to the present invention, the conductive metal grid is embedded in the layer stack, and the metal grid is deposited on the buffer/i-layer before or after the P2 structure line, thereby forming an embedded grid, and thus, the front electrode and the interlayer can be deposited without breaking vacuum in the process sequence. The embedded grid reduces capital expenditure and operating cost.