A manufacturing method includes: disposing serial layers on a first layer; etching the first layer to form first etch areas; etching a photovoltaic layer on the first layer and the serial layers to form photovoltaic etch areas and photovoltaic areas; disposing first insulating areas at the photovoltaic areas, in which the first insulating areas are respectively filled in the photovoltaic etch areas, and the first insulating areas respectively contact the serial layers to form contact overlap areas; and disposing a second layer to fill the second layer to make the second layer electrically connected to the serial layers, and etching the second layer to form second etch areas, in which the second etch areas are respectively disposed within areas, and a contact overlap area width of the contact overlap area is larger than a second etch area width of the second etch area.

A layer stack for thin-film photovoltaic modules includes a back electrode, an absorber, a buffer/i-layer, a front electrode and an interlayer which are sequentially stacked on a corresponding substrate from bottom up by vacuum coating deposition. The layer stack is divided by P1, P2 and P3 structure lines respectively. A conductive metal grid is embedded in the layer stack, and the metal grid is deposited on the buffer/i-layer before or after the P2 structure line. According to the present invention, the conductive metal grid is embedded in the layer stack, and the metal grid is deposited on the buffer/i-layer before or after the P2 structure line, thereby forming an embedded grid, and thus, the front electrode and the interlayer can be deposited without breaking vacuum in the process sequence. The embedded grid reduces capital expenditure and operating cost.

A layer stack for thin-film photovoltaic modules includes a back electrode, an absorber, a buffer/i-layer, a front electrode and an interlayer which are sequentially stacked on a corresponding substrate from bottom up by vacuum coating deposition. The layer stack is divided by P1, P2 and P3 structure lines respectively. A conductive metal grid is embedded in the layer stack, and the metal grid is deposited on the buffer/i-layer before or after the P2 structure line. According to the present invention, the conductive metal grid is embedded in the layer stack, and the metal grid is deposited on the buffer/i-layer before or after the P2 structure line, thereby forming an embedded grid, and thus, the front electrode and the interlayer can be deposited without breaking vacuum in the process sequence. The embedded grid reduces capital expenditure and operating cost.