A SiC trench MOSFET with an embedded junction Schottky barrier diode (JBSD) having P-shield (PS) regions surrounding bottoms of source-body-Schottky contact (SBSC) trenches for gate oxide electric-field and switching loss reductions is disclosed. A source metal connects with the PS regions and the JBSD directly. Sidewall P (SP) regions are formed along a portion of sidewalls of the SBSC trenches to improve a tradeoff between a drain-source leakage current of the SiC trench MOSFET and a forward voltage of the JBSD. The device further comprises an N-type shield region formed below each of gate trenches for gate oxide electric field strength and specific on-resistance reductions.

A Schottky diode includes a substrate with an active region. Sidewall and bottom surfaces of trench extending into an epitaxial layer of the substrate are lined with an insulating layer, and the remainder of each trench is filled with a polycrystalline silicon (polysilicon) fill. A doped region having the same conductivity type dopant as the semiconductor substrate is implanted in the epitaxial layer at locations between adjacent trenches. A silicide is provided at each polysilicon fill and a Schottky barrier is provided at each doped region. An anode contact for the diode contacts the silicide and Schottky barrier, and a cathode contact for the diode contacts a lower surface of the substrate. The selection of a dopant concentration level for the doped region controls setting of a forward voltage V.sub.F level for the Schottky diode.

A semiconductor structure includes a semiconductor substrate of a first conductivity type. The semiconductor substrate can have an upper surface and a bottom surface. The semiconductor substrate can be made of polycrystalline silicon carbide. The semiconductor structure can further include a drift region of the first conductivity type located on the upper surface of the semiconductor substrate. The semiconductor structure can further include a first region of the upper surface of the semiconductor substrate including a formation region of a transistor, and a second region of the upper surface of the semiconductor substrate, adjacent to the first region, including a formation region of a Schottky barrier diode.