H01L41/23

Arrangement and method for influencing and/or detecting a dynamic or static property of a support structure

An arrangement and a method are described for influencing and/or detecting a dynamic or static property of a support structure which has a support structure surface, with at least one planar first actuator element that includes at least one electrically and/or magnetically activated transducer material, and a fiber composite material which joins the first actuator element indirectly or directly to the support structure surface in a planar, which has at least one first fiber layer and a curable matrix. The first fiber layer at least partially covers the first actuator element resting indirectly or directly on the support structure surface, protrudes beyond the first actuator element on both sides along at least a spatial direction running parallel to the support structure surface, and permanently adheres directly to at least some areas of the support structure surface at least in the regions protruding beyond the first actuator element by means of the curable matrix.

ULTRASONIC TRANSDUCER WITH A PIEZOCERAMIC AND METHOD FOR PRODUCING AN ULTRASONIC TRANSDUCER OF THIS KIND
20210048323 · 2021-02-18 · ·

An ultrasonic transducer and a method for producing an ultrasonic transducer are disclosed wherein the ultrasonic transducer has outstanding media resistance and a simpler construction by reducing the number of individual parts, so that the ultrasonic transducer can be produced in a fully-automated production process. The ultrasonic transducer, particularly for measurement of fluid volumes, can include a housing in which a contact element and a piezoceramic are arranged, wherein the piezoceramic includes two electrodes of differing polarity which are attached to different sides of the piezoceramic, wherein contact areas of the two electrodes for making electrical contact are disposed on a same side of the piezoceramic and the contact element includes at least two contact sections of differing polarity which are in electrically conducting contact with the contact areas of the two electrodes of corresponding polarity.

Stacked piezoelectric composites and methods of making

The present application relates to stacked piezoelectric composites comprising piezoelectric structures. Suitably, the composites are useful as tissue-stimulating implants, including spinal fusion implants. The present application also relates to methods of making stacked piezoelectric composites.

Enclosure with tamper respondent sensor

The present invention relates to a method to fabricate a tamper respondent assembly. The tamper respondent assembly includes an electronic component and an enclosure fully enclosing the electronic component. The method includes printing, by a 3-dimensional printer, a printed circuit board that forms a bottom part of the enclosure and includes a first set of embedded detection lines for detecting tampering events and signal lines for transferring signals between the electronic component and an external device. The electronic component is assembled on the printed circuit board, and a cover part of the enclosure is printed on the printed circuit board. The cover part includes a second set of embedded detection lines. Sensing circuitry can be provided for sensing the conductance of the first set of embedded detection lines and the second set of embedded detection lines to detect tampering events.

ENCLOSED CAVITY STRUCTURES

An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.

RF ACOUSTIC WAVE RESONATORS INTEGRATED WITH HIGH ELECTRON MOBILITY TRANSISTORS INCLUDING A SHARED PIEZOELECTRIC/BUFFER LAYER AND METHODS OF FORMING THE SAME
20210067123 · 2021-03-04 ·

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

ENCLOSED CAVITY STRUCTURES

An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.

Method of Manufacture and Use of a Flexible Computerized Sensing Device
20210020824 · 2021-01-21 ·

A thin, flexible computerized sensing platform which can be affixed to a structure to be sensed, which has excellent mechanical coupling between the sensors and the object to be sensed, which can be self-powered and rechargeable, and which can be environmentally sealed, and a method for assembling and utilizing the same.

Acoustic filter with packaging-defined boundary conditions and method for producing the same

A BAW resonator/filter with a monolithic TFE package that defines an acoustic BC and suppresses resonances from the low-Q piezoelectric area of the resonator and resulting devices are provided. Embodiments include a BAW resonator over a dielectric layer, the BAW resonator including a first metal layer, a thin-film piezoelectric layer, and a second metal layer; a first cavity in the dielectric layer under the first metal layer and a second cavity over the first cavity on the second metal layer; and a pair of TFE anchors on the second metal layer, each TFE anchor adjacent to and on an opposite side of the second cavity and extending beyond the first metal layer.

ENCLOSED CAVITY STRUCTURES

An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.