A thermal chamber includes a cavity that is enclosed by sides and one or more ports that expose the cavity within the thermal chamber. Each of the one or more ports is configured to receive a temperature control component having a solid physical structure and configured to transfer thermal energy to and from an electrical device exposed via the cavity. The thermal chamber includes a bottom side open area of the thermal chamber located below the one or more ports. The bottom side open area is configured to allow the temperature control component to contact the electrical device that is exposed via the bottom side open area.

A thermoelectric transducer includes a substrate, a thermoelectric film on the substrate, a first electrode on the substrate, and a second electrode on the substrate, the second electrode being different from the first electrode in work function. The first electrode and the second electrode are in contact with the same side of the thermoelectric film. The outer edge of the thermoelectric film is located inner than the outer edge of the substrate.

Embodiments relate to an apparatus for a nano-scale energy converter and an electric power generator. The apparatus includes two electrodes separated by a distance. The first electrode is manufactured to have a first work function value and the second electrode is manufactured to have a second work function value, with the first and second work function values being different. A cavity is formed by the distance between the first and second electrodes, and a nanofluid is disposed in the cavity. The nanofluid includes nanoparticles suspended in a dielectric medium. The nanoparticles have a third work function value that is greater than the first and second work function values. The relationship of the work function values of the nanoparticles to the work function values of the electrodes optimizes the transfer of electrons to the nanoparticles through Brownian motion and electron hopping.

A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.

A solar power generation paddle includes a blanket that is stored by being taken up into a roll with using extension masts, and that is extended. Solar battery cells are disposed on one surface of the blanket, and thermoelectric conversion elements are disposed on the other surface of the blanket. A plurality of heat dissipation members are disposed on surfaces of the thermoelectric conversion elements which are opposite to surfaces near the blanket, along an extending direction, to cover the thermoelectric conversion elements.

The present invention provides a thermoelectric conversion material having a considerably increased Seebeck coefficient, and a thermoelectric conversion device, a thermo-electrochemical cell and a thermoelectric sensor which include the material. The thermoelectric conversion material of the present invention includes a redox pair and a capture compound which captures only one of the redox pair selectively at low temperature and releases at high temperature.

A method is provided for growing a fiber structure, where the method includes: obtaining a substrate, growing an array of pedestal fibers on the substrate, growing fibers on the pedestal fibers, and depositing a coating surrounding each of the fibers. In another aspect, a method of fabricating a fiber structure includes obtaining a substrate and growing a plurality of fibers on the substrate according to 1½D printing. In another aspect, a multilayer functional fiber is provided produced by, for instance, the above-noted methods.

Provided is a heat flow switching element which has a larger change in a thermal conductivity and has excellent thermal responsiveness. The heat flow switching element includes an N-type semiconductor layer, an insulator layer laminated on the N-type semiconductor layer, a P-type semiconductor layer laminated on the insulator layer, an N-side electrode connected to the N-type semiconductor layer, and a P-side electrode connected to the P-type semiconductor layer. In particular, the insulator layer is formed of a dielectric. Also, a plurality of N-type semiconductor layers and P-type semiconductor layers are laminated alternately with the insulator layer interposed therebetween.

According to one embodiment, a power generation element, includes a first conductive layer, a second conductive layer, and a crystal member. A direction from the second conductive layer toward the first conductive layer is along a first direction. The crystal member is provided between the first conductive layer and the second conductive member. The crystal member includes a crystal pair. The crystal pair includes a first crystal part and a second crystal part. A second direction from the first crystal part toward the second crystal part crosses the first direction. A gap is provided between the first crystal part and the second crystal part. The first conductive layer is electrically connected to the first crystal part. The second conductive layer is electrically connected to the second crystal part.

Disclosed is a thermoelectric module. One embodiment of the thermoelectric modules comprises: a first substrate; a first electrode disposed on the first substrate; a thermoelectric leg disposed on the first electrode; a second electrode disposed on the thermoelectric leg; a second substrate disposed on the second electrode; a plurality of wire parts electrically connected to the first electrode and the second electrode; a first sealing part disposed on the first substrate and surrounding the side surface of the second substrate; and a second sealing part passing through the first sealing part and disposed on the inside and outside of the first sealing part. At least one of the plurality of wire parts is partially disposed inside the second sealing part. The second sealing part includes: a first region which is closest to the first sealing part outside the first sealing part; and a second region which is disposed outside the first region and is in contact with the wire part partially disposed inside the second sealing part, wherein the thickness of the second region is less than the thickness of the first region.