An exchanger includes a seal; a first channel with an inlet and an outlet; a second channel alongside the first channel and isolated from the first channel by the seal, the second channel including an inlet and an outlet; and a transfer turbine including a first portion with one or more blades located within the first channel, a second portion with one or more blades located within the second channel, and a shaft connecting the first portion and the second portion such that rotation of the first portion is synchronized with rotation of the second portion, the shaft extending through the seal. Related apparatus, systems, techniques, and articles are also described.

Disclosed are a high performance thermoelectric device and a method of manufacturing the same at ultra-high speed. The high performance thermoelectric device includes segmented structures which may provide an optimal match between the thermoelectric materials and the environmental temperature difference; blocking layers and stress-buffering layers which can reduce interface element migration and longitudinal contact thermal expansion stress and increase bonding strength; phonon scattering layers and negative thermal expansion buffering layers inserted and fixing the thermoelectric leg, thereby increasing internal thermal resistance and improving transverse thermo-match for the high performance thermoelectric device; an inner package and an outer package, thus avoiding sublimation and oxidation of the thermoelectric materials and providing the thermoelectric device with enhanced impact resistance from outside.

A system exchanges pressure and heat from a source stream to a sink stream. The system includes a source exchanger and a sink exchanger. The source exchanger includes a first pressure exchanger and a first heat exchanger. The first pressure exchanger converts pressure of the source stream to electrical energy. The first heat exchanger converts temperature from the source stream via a first temperature differential to electrical energy. The sink exchanger includes a second pressure exchanger and a second heat exchanger. The second pressure exchanger uses electrical energy received from the source exchanger to change a pressure of the sink stream. The second heat exchanger uses electrical energy received from the source exchanger to change a temperature of the sink stream. Related apparatus, systems, techniques, and articles are also described.

A novel semiconductor device is provided. The semiconductor device includes a first resistor and a second resistor. The first resistor and the second resistor are electrically connected in series. A resistance material of the first resistor includes a metal oxide, and a resistance material of the second resistor is different from the resistance material of the first resistor. The semiconductor device is configured to output a voltage corresponding to the resistance values of the first resistor and the second resistor. The voltage reflects the properties of the resistance materials of the first resistor and the second resistor. The semiconductor device may include a circuit for processing this voltage. In that case, the first resistor can be stacked over the circuit, resulting in the downsizing of the semiconductor device.

A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.

The present invention aims at providing a thermoelectric conversion module with low toxicity, which exhibits conversion efficiency equivalent to that of BiTe. The thermoelectric conversion module of the present invention employs a full Heusler alloy as the material for forming the P-type thermoelectric conversion unit and the N-type thermoelectric conversion unit. The material for forming the N-type thermoelectric conversion unit contains at least any one of Fe, Ti, and Si and Sn.

A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.

Provided is a feedback device providing thermal feedback. The feedback device, according to one embodiment, may comprise a casing, a heat output module, and a feedback controller. The casing comprises: a contact part, with which a user makes contact when the feedback device moves when a content is being played; and a noncontact part with which the user does not make contact even though the feedback device moves. The heat output module comprises: flexible first and second substrates; a thermoelectric element interposed between the first the second substrates and performing a thermoelectric operation for thermal feedback; and a contact surface disposed on the second substrate. The heat output module is disposed on the curve-shaped inside or outside of the contact part, and outputs thermal feedback to the user via the second substrate and the contact surface. The feedback controller is configured so as to control the thermal output module.

A thermoelectric device including: a thermoelectric material layer comprising a thermoelectric material; a transition layer on the thermoelectric material; and a diffusion prevention layer on the transition layer, wherein the thermoelectric material comprises a compound of Formula 1:
(A.sub.1-aA.sub.a).sub.4-x(B.sub.1-bB.sub.b).sub.3-y-zC.sub.zFormula 1
wherein A and A are different from each other, A is a Group 13 element, and A is at least one element of a Group 13 element, a Group 14 element, a rare-earth element, or a transition metal, B and B are different from each other, B is a Group 16 element, and B is at least one element of a Group 14 element, a Group 15 element, or a Group 16 element, C is at least one halogen atom, a complies with the inequality 0a<1, b complies with the inequality 0b<1, x complies with the inequality 1<x<1, y complies with the inequality 1<y<1, and z complies with 0z<0.5.

The present invention relates to a thermochemical gas sensor including a substrate provided with an insulating layer; a seed layer provided on the insulating layer; a thermoelectric thin film provided on the seed layer; an electrode provided on the thermoelectric thin film; a catalyst layer provided on the electrode and causing exothermic reaction when in contact with gas to be sensed; and an electrode wire electrically connected to the electrode, wherein the thermoelectric thin film is formed of a material including a chalcogenide, wherein the chalcogenide includes one or more chalcogens selected from the group consisting of selenium (Se) and tellurium (Te). The thermochemical gas sensor according to the present invention can be miniaturized and sense gases at various concentrations due to being based on a thermoelectric thin film, does not undergo physical/chemical changes, such as phase change of a thermoelectric thin film, even if repeatedly exposed to gas, and can sense various desired gas types using changes in a catalyst reacting selectively with gases to be sensed.