Integrated circuit devices which include a thermoelectric generator which recycles heat generated by operation of an integrated circuit, into electrical energy that is then used to help support the power requirements of that integrated circuit. Roughly described, the device includes an integrated circuit die having an integrated circuit thereon, the integrated circuit having power supply terminals for connection to a primary power source, and a thermoelectric generator structure disposed in sufficient thermal communication with the integrated circuit die so as to derive, from heat generated by the die, a voltage difference across first and second terminals of the thermoelectric generator structure. A powering structure is arranged to help power the integrated circuit, from the voltage difference across the first and second terminals of the thermoelectric generator. The thermoelectric generator can include IC packaging material that is made from thermoelectric semiconductor materials.

A metal junction thermoelectric device includes at least one thermoelectric element. The thermoelectric element has first and second opposite sides, and a first conductor made from a first metal, and a second conductor made from a second metal. The first and second conductors are electrically interconnected in series, and the first and second conductors are arranged to conduct heat in parallel between the first and second sides. The first metal has a first occupancy state, and the second metal has a second occupancy state that is lower than the first occupancy state. A temperature difference between the first and second sides of the thermoelectric element causes a charge potential due to the difference in occupancy states of the first and second metals. The charge potential generates electrical power.

Provided is a thermoelectric module capable of preventing the leakage of a current generated from a connection portion upon connecting a thermoelectric semiconductor element to an electrode by forming an insulating layer having a low heat conductivity on an external surface of the thermoelectric semiconductor element and improving performance of the thermoelectric element by controlling a heat transfer phenomenon from a heating part to a cooling part.

An apparatus and methods to make a product using supersonic cold-spray deposition of brittle functional materials in fine and micro features down to 10 μm in minimum dimension. The process may use semiconductors such as bismuth and antimony telluride formulations, and hard magnetic materials such as neodymium iron boride and strontium ferrite, and soft magnetic materials such as manganese zinc ferrite, and manganese ferrite materials. In addition, the methods and processes have been demonstrated for materials as soft as graphite and as hard as boron carbide. Micro components have been deposited in square, tapered and elongated shaped features with feature sizes as small as 10 μm in minimum dimensions and applied to flat and highly complex shaped surfaces. This process when combined with other cold spray manufacturing processes allows the total additive manufacturing of complete electronic, magnetic and other complex devices including multiple type of brittle functional materials.

A method of forming a thermal barrier coating is disclosed. The method may include providing a solution containing strontium and niobium and applying the solution to a substrate via a chemical solution deposition process to form a first film layer on the substrate. The method may further include pyrolyzing the first film layer and annealing the first film in an air atmosphere to form a strontium niobate coating.

A thermoelectric conversion material (10) according to an embodiment includes a plurality of parent-phase particles (22) and nanoparticles (30). The parent-phase particles (22) have a crystalline structure. Each of the nanoparticles (30) includes an oxide and exists at an interface between the parent-phase particles (22). The nanoparticles (30) include at least one element that constitutes the crystalline structure. When a range of 6 μm×4 μm of the thermoelectric conversion material (10) is observed with a scanning electron microscope to acquire one sheet of cross-sectional observation image, an average particle diameter d, which is an average of an equivalent circle diameter of a particle group including the parent-phase particles (22) and the nanoparticles (30) which are observed on the cross-sectional observation image, is equal to or more than 100 nm and equal to or less than 1000 nm.

Provided is a thermoelectric element assembly including a soft support including a plurality of through-holes, and a plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements inserted into a plurality of through-holes of the support, wherein a thickness of the support is less than a length of the thermoelectric element.

The invention relates to the use of thermo-compression bonding (TCB) for bonding electrically conductive contacts to thermoelectric material pieces, respective processes and thermoelectric modules which are suitable for fitting in the exhaust system of an internal combustion engine.

An integrated circuit may include a substrate and a dielectric layer formed over the substrate. A plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements may be disposed within the dielectric layer. The p-type thermoelectric elements and the n-type thermoelectric elements may be connected in series while alternating between the p-type and the n-type thermoelectric elements.

A semiconductor device includes a semiconductor substrate, a polysilicon layer fixed to the semiconductor substrate, and a silicon nitride layer in contact with the polysilicon layer, wherein the polysilicon layer includes an n-type layer and a p-type layer in contact with the n-type layer; a semiconductor device manufacturing method includes forming the polysilicon layer covering at least one hydrogen-containing layer, and heating the polysilicon layer and the hydrogen-containing layer.