A plurality of comparison circuits each including a first terminal for inputting a first analog signal and a second analog signal and a second terminal connected to a wiring for transmission of a ramp signal A first operation changes an electric potential of the wiring from a predetermined electric potential to a first electric potential to cause at least one of the plurality of comparison circuits to retain a first offset. A second operation, after the first operation, converts the first analog signal into a digital signal. A third operation, after the second operation, changes the electric potential of the wiring to an electric potential included in a range of from the predetermined electric potential to the first electric potential. A fourth operation, after the third operation, converts the second analog signal into a digital signal.

A solid-state imaging device includes: a photoelectric conversion element that is disposed on a semiconductor substrate and generates signal charges by photoelectric conversion; a first diffusion layer that holds signal charges transferred from the photoelectric conversion element; a capacitive element that holds signal charges overflowing from the photoelectric conversion element; an amplifier transistor that outputs a signal according to the signal charges in the first diffusion layer; a first contact that is connected to the first diffusion layer; a second contact that is connected to a gate of the amplifier transistor; and a first wire that connects the first contact and the second contact. A shortest distance between the semiconductor substrate and the first wire is less than a shortest distance between the semiconductor substrate and the capacitive element.

Disclosed is an image sensing device and an operating method thereof. The image sensing device may include an analyzer suitable for analyzing a state of each of multiple kernels based on system information and a plurality of pixel values, a detector suitable for detecting color noise of a target pixel value among pixel values included in a target kernel among the multiple kernels, according to the analysis result of the analyzer, and a corrector suitable for correcting the target pixel value according to the detection result of the detector.

An imaging device having a pixel including: a photoelectric converter that generates an electric signal through photoelectric conversion of incident light; a first transistor that has a gate coupled to the photoelectric converter and that amplifies the electric signal; and a second transistor that has a gate coupled to the photoelectric converter, one of a source and a drain of the second transistor being coupled to the photoelectric converter. The imaging device further includes a voltage supply circuit configured to supply two or more different voltages to the other of the source and the drain of the second transistor.

Disclosed is an image processing method including adjusting a light exposure time of an image acquisition unit by using a target image converted to be output in a desired output mode among a plurality of output modes; and displaying target images acquired according to the adjustment.

A calibrating device of calibrating a real-time image through a dithering process including a receiving unit, a storing unit, a displacing module, a computing module, and an outputting unit is disclosed. The receiving unit receives a real-time image from an image sensor and records a time parameter of the image. The storing unit stores a hash table that records multiple hash values used to calibrate the image. The displacing module shifts the multiple hash values in the hash table to generate an adjusted hash table. The computing module obtains a corresponding hash value from the adjusted hash table for each pixel point of the image in accordance with the coordinates of each pixel point, and respectively adds the corresponding hash value to the pixel value of each pixel point of the image to generate a calibrated image. The outputting unit outputs the calibrated image.

An electronic apparatus is provided. The electronic apparatus includes a display and a processor configured to obtain a low-frequency variation amount based on low-frequency information corresponding to a first frame and low-frequency information corresponding to a second frame, obtain a high-frequency variation amount based on high-frequency information corresponding to the first frame and high-frequency information corresponding to the second frame, obtain a weight based on a difference between the low-frequency variation amount and the high-frequency variation amount, apply the weight to a high-frequency frame corresponding to the second frame, obtain an output frame corresponding to the second frame, based on the second frame and a high-frequency frame to which the weight is applied, and control the display to display the obtained output frame.

A pulse generator of an image sensor includes a delay cell including a plurality of transistors arranged in series between a power voltage and a ground, a stabilization capacitor, and a stabilization switch. The power voltage is supplied to a first terminal of a first transistor disposed first among the plurality of transistors, and a gate terminal of the first transistor is connected to a first node. An input voltage is supplied to a gate terminal of an n-th transistor disposed last among the plurality of transistors, and a ground voltage is supplied to a first terminal of the n-th transistor. The stabilization switch is disposed between a reference voltage input terminal providing a reference voltage and the first node. The stabilization switch is turned on by an input bias control signal to supply the reference voltage to the first node.

An imaging element includes a first substrate provided with a photoelectric conversion unit configured to generate electric charges by photoelectric conversion and a signal line to which a signal based on the electric charges generated by the photoelectric conversion unit is output and a second substrate provided with a supply unit configured to supply a voltage to the signal line so that a voltage of the signal line does not fall below a predetermined voltage and a processing unit configured to process a signal output to the signal line, the second substrate being stacked on the first substrate.

Techniques are described for sampled bandgap reference generation for CMOS image sensor (CIS) applications. For example, the CIS includes a pixel array, one or more pixel analog to digital converters (ADCs), and a sampled bandgap reference generator, all integrated in close proximity on a chip. The ADCs rely on stable reference levels from the bandgap reference generator for performing pixel conversions for the pixel array. Embodiments of the sampled bandgap reference generator can operate according to reference generation cycles. Each cycle can include a first portion, in which an active core dynamically stabilizes the bandgap reference level; and a second portion, in which the core is deactivated, and the bandgap reference level is output based on a sampled level obtained during the preceding first portion of the cycle. The cycle timing can be controlled to achieve sufficient dynamic stabilization of the reference levels, while mitigating photon emissions from the core.