A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided on a part of the first semiconductor region, a third semiconductor region of the first conductivity type provided on a part of the second semiconductor region, agate electrode, a first electrode, and a conductive portion. The gate electrode is provided on another part of the second semiconductor region via a gate insulating portion. The first electrode is provided on the third semiconductor region and electrically connected to the third semiconductor region. The conductive portion is provided on another part of the first semiconductor region via a first insulating portion and electrically connected to the first electrode, and includes a portion arranged side by side with the gate electrode in a second direction perpendicular to a first direction from the first semiconductor region to the first electrode.

According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.

When hydrogen penetrates in to the semiconductor device, a gate voltage threshold of a gate structure (Vth) is shifted.

Penetrating of hydrogen into the semiconductor device from the edge termination structure section which is positioned at an end portion of the semiconductor device is prevented.

To provide a semiconductor device comprising a semiconductor substrate in which an active region and an edge termination structure section which is provided around the active region are provided, a first lower insulating film which is provided in the edge termination structure section on the semiconductor substrate, and a first protective film which is provided on the first lower insulating film, and is electrically insulated from the semiconductor substrate, and occludes hydrogen.

A reverse-conducting IGBT includes a semiconductor body having a drift region arranged between first and second surfaces. The semiconductor body further includes first collector regions arranged at the second surface and in Ohmic contact with a second electrode, backside emitter regions and in Ohmic contact with the second electrode. In a horizontal direction substantially parallel to the first surface, the first collector regions and backside emitter regions define an rc-IGBT area. The semiconductor body further includes a second collector region of the second conductivity type arranged at the second surface and in Ohmic contact with the second electrode. The second collector region defines in the horizontal direction a pilot-IGBT area. The rc-IGBT area includes first semiconductor regions in Ohmic contact with the first electrode and arranged between the drift region and first electrode. The pilot-IGBT area includes second semiconductor regions of the same conductivity type as the first semiconductor regions.

A super junction MOSFET includes a parallel pn layer including a plurality of pn junctions and in which an n-type drift region and a p-type partition region interposed between the pn junctions are alternately arranged and contact each other, a MOS gate structure on the surface of the parallel pn layer, and an n-type buffer layer in contact with an opposite main surface. The impurity concentration of the buffer layer is equal to or less than that of the n-type drift region. At least one of the p-type partition regions in the parallel pn layer is replaced with an n.sup. region with a lower impurity concentration than the n-type drift region. With this structure, it is possible to provide a super junction MOSFET which prevents a sharp rise in hard recovery waveform during a reverse recovery operation.

A method for forming a power semiconductor device is provided. The method includes providing a substrate having a first surface and a second surface; and forming a plurality of trenches in the second surface of the substrate. The method also includes forming a semiconductor pillar in each of the plurality of trenches, wherein the semiconductor pillars and the substrate form a plurality of super junctions of the power semiconductor device for increasing the breakdown voltage of the power semiconductor device and reducing the on-stage voltage of the power semiconductor device; and forming a gate structure on the first surface of the substrate. Further, the method includes forming a plurality of well regions in the first surface of the substrate around the gate structure; and forming a source region in each of the plurality of well regions around the gate structure.

A semiconductor device is manufactured in a semiconductor body by forming an initial mask on a process surface of a semiconductor layer, openings in the mask exposing a part of the semiconductor layer in alignment structure and super-junction structure areas. A recess structure is formed in the semiconductor layer at portions of the process surface that are exposed by the openings, the recess structure in the alignment structure area constituting an initial alignment structure. Dopants are introduced into the semiconductor layer through portions of the process surface that are exposed by the openings of the initial mask. The dopants introduced in the super-junction area constitute part of a super-junction structure. A thickness of the semiconductor layer is increased by growing an epitaxial layer. The initial alignment structure is imaged into the process surface. Dopants are introduced into the semiconductor layer by using a mask aligned to the initial alignment structure.

A semiconductor apparatus including a power semiconductor element connected between a first terminal on a high potential side and a second terminal on a low potential side, and controlled to be ON or OFF according to a gate potential thereof; a switch element connected between a control terminal that inputs a control signal for controlling the power semiconductor element and a gate of the power semiconductor element, and controlled to be ON or OFF according to a gate potential thereof; an ON potential supplying section connected between the first terminal and a gate of the switch element, that supplies an ON potential to the gate of the switch element; and an OFF potential supplying section connected between a reference potential and the gate of the switch element, that sets the gate potential of the switch element to an OFF potential in response to a predetermined cutoff condition being satisfied.

A switching device includes first-third semiconductor layers, a gate insulating film, and a gate electrode. The first semiconductor layer is of a first conductivity type, The second semiconductor layer is of a second conductivity type and in contact with the first semiconductor layer. The third semiconductor layer is of the first conductivity type, in contact with the second semiconductor layer. The gate insulating film covers a surface of the second semiconductor layer in a range in which the second semiconductor layer separates the first semiconductor layer from the third semiconductor layer. The gate electrode faces the second semiconductor layer via the gate insulating film. The gate electrode includes a fourth semiconductor layer covering a surface of the gate insulating film; and a fifth semiconductor layer having a bandgap different from a bandgap of the fourth semiconductor layer and covering a surface of the fourth semiconductor layer.

A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 m or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.