An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.

Embodiments described herein may operate to compare an illuminance corresponding to a signal from an image sensor array (ISA) element in a production imaging system with an illuminance associated with optical flare incident to an ISA from which the ISA element is selected. The ISA element may be identified as unusable if the illuminance corresponding to the signal from the ISA element is less than the illuminance associated with the optical flare incident to the ISA.

A detection device for a CT system comprises a low-energy detector assembly; and a high-energy detector assembly disposed under the low-energy detector assembly. The high-energy detector assembly comprises: a plurality of rows of high-energy detectors arranged at predetermined intervals. With the detection device, detectors and data acquisition units are greatly reduced. A high-resolution three-dimensional CT image is acquired while high-accuracy hazardous article alarm is achieved. The cost of manufacture of the system is greatly decreased while high system performance is ensured.

An image capture device includes an image sensor. The image sensor includes a temperature sensor for measuring temperature measurements of the image sensor. A timing generator is coupled to the image sensor for applying an electronic shutter pulse to the image sensor to drain away all charge in photodiodes of the image sensing region prior to image capture. A reading component is coupled to the temperature sensor for reading the temperature measurements from the temperature sensor. The image capture device is configured to prevent erroneous temperature readings by the reading component resulting from substrate punch-through from the application of the electronic shutter pulse.

The disclosure describes customizable optoelectronic modules and methods for standardizing a plurality of the customizable optoelectronic modules. The customizable optoelectronic modules can be configured to mitigate dimensional variations and misalignments in a number of their respective constituent components such as optical assemblies and sensor covers. The customizable optoelectronic modules and methods for standardizing a plurality of the customizable optoelectronic modules can obviate the need for binning during manufacturing thereby saving considerable resources such as time and expense.

A photoelectric conversion unit generates an amount of charges. A differential amplifier has first and second input transistors and is configured to output a current signal based on the amount of charges. A reset voltage providing unit is configured to provide a reset voltage for input nodes of the first and second input transistors. A transfer transistor is electrically connected to, and configured to transfer a charge to, the input node of the first input transistor. A reset transistor is electrically connected to one of the input nodes, and configured to control an electrical connection between the reset voltage providing unit and the input node connected to the reset transistor. A connection transistor has first and second nodes and is configured to control an electrical connection between the input nodes. The first and second nodes are connected to the input nodes of the first and second input transistors, respectively.

An image sensor pixel includes a semiconductor layer, a photosensitive region to accumulate photo-generated charge, a floating node, a trench, and an entrenched transfer gate. The photosensitive region and the trench are disposed within the semiconductor layer. The trench extends into the semiconductor layer between the photosensitive region and the floating node and the entrenched transfer gate is disposed within the trench to control transfer of the photo-generated charge from the photosensitive region to the floating node.

Provided is a photodiode having a high-concentration layer on its surface, in which the high-concentration layer is formed so that the thickness of a non-depleted region is larger than the roughness of an interface between silicon and an insulation film layer, and is smaller than a penetration depth of ultraviolet light.

A solid-state imaging device includes: a photoelectric conversion unit which converts light into signal charges; an accumulation unit which accumulates the signal charges; a transfer transistor connected between the photoelectric conversion unit and the accumulation unit for transferring to the accumulation unit, the signal charges obtained through the conversion by the photoelectric conversion unit; an amplification transistor for amplifying the signal charges accumulated in the accumulation unit to generate a voltage signal, the amplification transistor having a gate connected to the accumulation unit; a reset transistor for resetting a voltage of the accumulation unit; a first amplification circuit for negatively feeding back the voltage signal generated by the amplification transistor to the reset transistor; and a second amplification circuit for positively feeding back the voltage signal generated by the amplification transistor to the amplification transistor.

An optical output photodetector includes a substrate having a semiconductor surface and at least one optical photodetector element on the semiconductor surface. The optical photodetector element includes a plurality of integrated sensing regions which collectively provide a plurality of different absorbance spectra. The plurality of sensing regions includes a plurality of different semiconductor materials or a semiconductor material having a plurality of different dopants. The optical photodetector element can be configured as an array of optical photodetector elements and the dopants can be magnetic dopants.