The embodiments of the present disclosure provide a reset method, a reset device, a reset system and a pixel array using the same. The reset method includes an electric charge accumulation unit being configured to store a first electric charge and an electric charge storage unit being configured to store a second electric charge. A polarity of the first electric charge is opposite to a polarity of the second electric charge. The reset method includes controlling the electric charge storage unit to obtain the second electric charge; and resetting the electric charge accumulation unit so as to transfer a preset amount of the second electric charge from the electric charge storage unit to the electric charge accumulation unit, which includes a third port of the control module applying a control voltage to a second end of the electric charge storage unit; and meanwhile charging the electric charge storage unit during the process of transferring the second electric charge.

A solid-state imaging apparatus according to an embodiment of the present disclosure includes a photoelectric transducer, a transfer transistor, a floating diffusion, a reset transistor, an amplifier transistor, and a selection transistor. The reset transistor includes a gate insulating film formed thinner than the gate insulating film of the transfer transistor.

An apparatus includes a plurality of pixels, a comparator configured to compare an output signal of each of the plurality of pixels with a reference signal, and a counter of K bits (K is a natural number) configured to operate in parallel with operation of the comparator. The apparatus converts the output signal of each of the plurality of pixels into a digital signal using an output of the comparator and an output of the counter. The apparatus includes an addition unit configured to add a plurality of the digital signals. The addition unit includes a serial binary adder of M bits (M is a natural number less than K).

An electronic device and a control method are provided. The electronic device includes a sensing pixel. The sensing pixel includes a photosensitive element, a first transistor, a second transistor and a third transistor. The first transistor is coupled to the photosensitive element and for receiving a reset signal. The second transistor is coupled to the photosensitive element. The third transistor is coupled to the second transistor and for receiving a scan signal. During a reset period, a reset signal waveform of the reset signal and a first scan signal waveform of the scan signal are at least partially overlapped.

A system and method is provided for performing high dynamic range digital double sampling. More particularly, a CMOS image sensor is provided that includes a pixel array with each pixel sampling both dark and bright values for digital double sampling. After the sampled signals are digitized, a mean dark value is determined and each dark value is further fed to a lookup table that generates an output value taking into account whether the pixel has been saturated. In over exposed conditions, the lookup table will generate a negative value output to eliminate image artifacts. All three values are fed to adder logic circuit that subtracts the mean dark value and the lookup table output from the bright value. This resulting output is fed to a video viewer.

Techniques are described for implementing ramp voltage generators with current steering architectures that provide high power supply noise rejection. For example, a current steering architecture uses a sample and hold block and a driver block to control and drive a current steering network. Both generate signals that track supply voltage variations, and those signals are used to generate a ramp voltage. For image sensor applications, image tolerance to ramp noise can be very low when the ramp voltage is low, but can increase appreciably as the ramp voltage increases. As such, embodiments can be implemented to provide high PSR at low ramp voltages, even if the PSR degrades at higher ramp voltages, while maintaining high linearity over the entire ramp voltage.

Switching techniques for fast voltage settling in image sensors are described. In one embodiment, an image sensor includes a plurality of lateral overflow integrating capacitor (LOFIC) pixels arranged in rows and columns of a pixel array. The plurality of pixels includes an active pixel configured for exposure to light, and a dummy pixel at least partially protected from exposure to light. A common bitline (BL) is couplable to the active pixel and the dummy pixel. A comparator (OA1) is coupled to the bitline. The comparator is configured to receive a pixel voltage (Vx) from the active pixel on one input and a ramp voltage (Vy) on another input. Charge accumulated by the active pixel is determined at least in part by an intersection between the ramp voltage and the pixel voltage.

An image sensor includes: a pixel outputting a pixel signal; a ramp voltage generation circuit suitable for generating a ramp voltage that changes at a first slope in a first section and generating the ramp voltage that changes at a second slope having a greater absolute value than the first slope in a second section following the first section; an operation amplifier suitable for comparing the pixel signal with the ramp voltage during the first section and the second section; and a counter circuit suitable for generating a digital code corresponding to the pixel signal in response to an output of the operation amplifier.

A first pixel circuit has a plurality of photodiodes of different sizes. A second pixel circuit is connected to the first pixel circuit, and has a holding portion that holds a first optical signal and a second optical signal. The peripheral circuit drives and controls the second pixel circuit, and determines whether a voltage value of the first optical signal is equal to or greater than a predetermined value. When it is determined that the voltage value of the first optical signal is equal to or greater than the predetermined value, a signal obtained by adding the second optical signal to the first optical signal is set as an output signal. When it is determined that the voltage value of the first optical signal is less than the predetermined value, the first optical signal is set as an output signal.

An imaging device includes a photoelectric converter that converts light into signal charge, a charge accumulation region that accumulates the signal charge, a first transistor having a gate connected to the charge accumulation region, and a common gate amplifier circuit that amplifies an output of the first transistor to output to the charge accumulation region. The common gate amplifier circuit includes a second transistor. One of a source and a drain of the second transistor is connected to one of a source and a drain of the first transistor, and the other of the source and the drain of the second transistor is connected to the charge accumulation region.