An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.

The present invention relates to a novel polymer and an organic electronic device using same. In the polymer according to the present invention, a cyclic electron-donor, including thiophene, selenophene, or a combination thereof, is introduced into a central skeleton having an A-D-A structure including an electron-donor and electron-acceptor unit. Thus, the polymer has not only excellent chemical and thermal stability, but also good crystallinity. Moreover, intermolecular stacking is possible, and thus charge mobility can be maximized.

An organic photodetector includes: an anode; a cathode facing the anode; and an active layer disposed between the anode and the cathode and including a first layer and a second layer. The first layer is disposed between the anode and the second layer, the first layer includes a p-type organic semiconductor and an n-type organic semiconductor, and the second layer includes the p-type organic semiconductor.

An ultra-thin shadow mask comprises a plastic foil including a plurality of apertures, wherein the ultra-thin shadow mask is less than 25 μm thick, and wherein the ultra-thin shadow mask has a feature size of at least 1 μm to about 100 μm. An organic photovoltaic (OPV) device comprises a first electrode including a first grid structure, the first grid structure having a feature size of at least 1 μm to about 100 μm, a heterojunction under the first electrode, a second electrode under the heterojunction including a second grid structure, and a plurality of outcoupling layers over the first electrode. Related methods are also disclosed.

A photo detecting device, includes a plurality of photodiodes arranged above a substrate, a lower electrode and a first inorganic insulating film that are provided between the substrate and the photodiodes in a direction orthogonal to a surface of the substrate, and an upper electrode provided above the photodiodes. Each of the photodiodes comprises an active layer, a first carrier transport layer provided between the active layer and the lower electrode, and a second carrier transport layer provided between the active layer and the upper electrode, the first inorganic insulating film is provided between the lower electrode and the first carrier transport layer, and the first inorganic insulating film covers at least an end on an outer edge side of the lower electrode.

The present invention relates to a working electrode (1a) for a photovoltaic device, comprising a light absorbing layer (3) and a conductive layer (6) arranged in electrical contact with the light absorbing layer (3), and the light absorbing layer (3) comprises a light absorbing photovoltaic material consisting of a plurality of dye molecules. The light absorbing layer (3) is formed by a layer of a plurality of clusters (7), whereby each cluster (7) is formed by dye molecules and each dye molecule in the cluster (7) is bonded to its adjacent dye molecules.

There is provided a semiconductor film that includes an aggregate of semiconductor quantum dots that contain a Pb atom, and a ligand that is coordinated to the semiconductor quantum dot, in which a ratio of the number of Pb atoms having a valence of 1 or less to the number of Pb atoms having a valence of 2 is 0.20 or less. There are also provided a photodetector element, an image sensor, and a manufacturing method for a semiconductor film.

A light-receiving device that is highly convenient, useful, or reliable is provided. The light-receiving device includes a light-receiving layer between a pair of electrodes, the light-receiving layer includes an active layer and a hole-transport layer, the hole-transport layer contains a first organic compound, and the first organic compound is an aromatic monoamine compound or a heteroaromatic monoamine compound having at least one skeleton of biphenylamine, carbazolylamine, dibenzofuranylamine, dibenzothiophenylamine, fluorenylamine, and spirofluorenylamine. Alternatively, the light-receiving device includes a light-receiving layer between a pair of electrodes, the light-receiving layer includes an electron-transport layer and an active layer, the electron-transport layer contains a second organic compound, and the second organic compound includes a triazine ring.

Disclosed are a photodetector using a photoelectric conversion effect wherein current changes according to light; and a method of manufacturing the photodetector. More particularly, a photodetector manufactured using a transition metal dichalcogen compound having high sensitivity to wavelengths of light in the visible light region by forming a sensor layer utilizing a transition metal dichalcogen compound such that the thickness of the sensor layer can be adjusted is provided.

A perovskite-silicon tandem cell capable of absorbing solar radiation with energy lower than that of 1.12 eV, i.e., the bandgap of crystalline silicon—corresponding to the wavelength of 1100 nm. Ho.sup.3+ can absorb photons of wavelength range 1120 to 1190 nm, Tm.sup.3+, 1190 to 1260 nm, and Er.sup.3+, 1145 to 1580 nm, but up-conversion can be achieved using Ho.sup.3+, Tm.sup.3+, and Er.sup.3+-doped metal oxide, such as ZrO.sub.2, in perovskite-silicon tandem solar cells. Doped metal oxides, such as ZrO.sub.2 can also work as selective contacts. Such perovskite-silicon tandem structures can achieve over 30% solar energy conversion efficiency.