A method for constructing a solar rectenna array by growing carbon nanotube antennas between lines of metal, and subsequently applying a bias voltage on the carbon nanotube antennas to convert the diodes on the tips of the carbon nanotube antennas from metal oxide carbon diodes to geometric diodes. Techniques for preserving the converted diodes by adding additional oxide are also described.

Composite materials comprising electrically conductive particles in a form-stable phase change materials (PCMs) are provided. Also provided as radiation sensors incorporating the composites and methods for detecting radiation using the composites. The PCMs comprise crosslinked polyether polyol that undergoes a reversible solid-solid phase change upon heating. Prior to the phase change, the crosslinked polyether polyol comprises microscopic crystalline domains. When the PCM is heated beyond its phase transition temperature these microscopic crystalline domains melt. However, the form-stable PCMs retain their solid form at the macroscopic level.

The invention relates to a device for detecting electromagnetic radiation, said device comprising at least one row of photoresistors (45), each photoresistor comprising an active portion comprising organic semiconductor materials.

Provided are a core-shell structured perovskite nanocrystalline particle light-emitting body, a method of preparing the same, and a light emitting device using the same. The core-shell structured organic-inorganic hybrid perovskite nanocrystalline particle light-emitting body or metal halide perovskite nanocrystalline particle light-emitting body is able to be dispersed in an organic solvent, and has a perovskite nanocrystal structure and a core-shell structured nanocrystalline particle structure. Therefore, in the perovskite nanocrystalline particle light-emitting body of the present invention, as a shell is formed of a substance having a wider band gap than that of a core, excitons may be more dominantly confined in the core, and durability of the nanocrystal may be improved to prevent exposure of the core perovskite to the air using a perovskite or inorganic semiconductor, which is stable in the air, or an organic polymer.

The fabrication and characterization of large scale inverted organic solar array fabricated using all-spray process is disclosed. Solar illumination has been demonstrated to improve transparent solar photovoltaic devices. The technology using SAM has potential to revolute current silicon-based photovoltaic technology by providing a complete solution processable manufacturing process. The semi-transparent property of the solar module allows for applications on windows and windshields. The inventive modules are more efficient than silicon solar cells in artificial light environments. This significantly expands their use in indoor applications. Additionally, these modules can be integrated into soft fabric substances such as tents, military back-packs or combat uniforms, providing a highly portable renewable power supply for deployed military forces.

An organic photovoltaic device includes an anode and a cathode. The organic photovoltaic device includes an active layer between the anode and the cathode. The active layer includes a p-type material. The p-type material includes a donor-acceptor (DA) polymer. An acceptor unit of the DA polymer includes a functionalized pyranopyran-dione compound or a functionalized naphthyridine-dione compound.

A perovskite-based solar cell comprising a transparent electrode disposed on a buffer layer that protects the perovskite from damage during the deposition of the electrode is disclosed. The buffer material is deposited using either low-temperature atomic-layer deposition, chemical-vapor deposition, or pulsed chemical-vapor deposition. In some embodiments, the perovskite material is operative as an absorption layer in a multi-cell solar-cell structure. In some embodiments, the perovskite material is operative as an absorption layer in a single-junction solar cell structure.

An optoelectronic device is provided, the p-doped HTL device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.

A process of forming a photoactive layer of a planar perovskite photoactive device comprising: applying at least one layer of a first precursor solution to a substrate to form a first precursor coating on at least one surface of the substrate, the first precursor solution comprising MX.sub.2 and AX dissolved in a first coating solvent, wherein the molar ratio of MX.sub.2:AX=1:n with 0<n<1; and applying a second precursor solution to the first precursor coating to convert the first precursor coating to a perovskite layer AMX.sub.3, the second precursor solution comprising AX dissolved in a second coating solvent, the first precursor solution reacting with the second precursor solution to form a perovskite layer AMX.sub.3 on the substrate, wherein A comprises an ammonium group or other nitrogen containing organic cation, M is selected from Pb, Sn, Ge, Ca, Sr, Cd, Cu, Ni, Mn, Co, Zn, Fe, Mg, Ba, Si, Ti, Bi, or In, X is selected from at least one of F, Cl, Br or I.

An optical sensor includes: a semiconductor layer including first and second regions; a gate electrode; a gate insulating layer including a photoelectric conversion layer; a voltage supply circuit; and a signal detection circuit connected to the first region. The photoelectric conversion layer has a photocurrent characteristic including first and second voltage ranges where an absolute value of a current density increases as an absolute value of a bias voltage increases, and a third voltage range where an absolute value of a rate of change of the current density relative to the bias voltage is less than in the first and second voltage ranges, The voltage supply circuit applies a predetermined voltage between the gate electrode and the second region such that the bias voltage falls within the third voltage range. The signal detection circuit detects an electrical signal corresponding to a change of a capacitance of the photoelectric conversion layer.