A core magnetization reversal method includes transforming the first magnetic skyrmion into a skyrmionium by applying a first alternating current (AC) magnetic field to the first magnetic skyrmion, and then transforming the skyrmionium into a second magnetic skyrmion by applying a second AC magnetic field to the skyrmionium. The first magnetic skyrmion may be formed on a hemispherical shell, which may be formed by (i) preparing a membrane having a plurality of protrusions, and (ii) stacking, on the membrane, a first layer including at least one of platinum (Pt), nickel (Ni), and palladium (Pd), and a second layer including a ferromagnetic material. The first and second AC magnetic fields may have different frequencies.

Disclosed is a magnetic memory device including a pinned magnetic pattern and a free magnetic pattern that are sequentially stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a top electrode on the free magnetic pattern, and a capping pattern between the free magnetic pattern and the top electrode. The capping pattern includes a lower capping pattern, an upper capping pattern between the lower capping pattern and the top electrode, a first non-magnetic pattern between the lower capping pattern and the upper capping pattern, and a second non-magnetic pattern between the first non-magnetic pattern and the upper capping pattern. Each of the lower capping pattern and the upper capping pattern includes a non-magnetic metal. The first non-magnetic pattern and the second non-magnetic pattern include different metals from each other.

This disclosure presents systems, devices, and methods that use magnetometers to measure large magnetic moments with strong magnetic anisotropy. A torque magnetometer may include an actuator driven by a motor, a load cell coupled to the actuator, a rotatable spool having a platform configured to hold a sample of a superconductor material, where the rotatable spool is coupled to the load cell by a first line, a pulley, and a second line extending between the rotatable spool and a counterweight, where the second line is positioned on the pulley. Movement of the actuator may cause the rotatable spool to rotate an angle of the platform relative to a magnetic field about the rotatable spool, and the load cell is capable of measuring the tension on the first line.

The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.

The present disclosure provides a domain wall magnetic tunnel junction device. Integration of input spikes pushes a domain wall within a ferromagnetic track toward a magnetic tunnel junction (MTJ). An energy gradient within the track pushes the domain wall away from the MTJ by leaking accumulated energy from the input spikes. If the integrated input spikes exceed the energy leak of the gradient within a specified time period, the domain wall reaches the MTJ and reverses its resistance, producing an output spike. The leaking energy gradient can be created by a magnetic field, a trapezoidal shape of the ferromagnetic track, or nonuniform material properties in the ferromagnetic track.

A method is provided. A substrate situated in a chamber is exposed to a halogen-containing gas comprising an element selected from the group consisting of silicon, germanium, carbon, titanium, and tin, and igniting a plasma to modify a surface of the substrate and form a modified surface. The substrate is exposed to an activated activation gas to etch at least part of the modified surface

A magnetic domain wall movement element includes a magnetic recording layer which includes a ferromagnetic material; a non-magnetic layer which is laminated on the magnetic recording layer; and a magnetization reference layer which is laminated on the non-magnetic layer, in which the magnetic recording layer has a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer, a magnetization of the first ferromagnetic layer and a magnetization of the second ferromagnetic layer are antiferromagnetically coupled, and an electrical resistivity of the first ferromagnetic layer is higher than the electrical resistivity of the second ferromagnetic layer.

A method of forming a semiconductor memory device is disclosed. A top electrode layer is formed on the MTJ stack layer. A patterned buffer layer is formed to cover only the logic circuit region. A hard mask layer is formed on the top electrode layer and the patterned buffer layer. A patterned resist layer is formed on the hard mask layer. A first etching process is performed to etch the hard mask layer and the top electrode layer not covered by the patterned resist layer in the memory region and the hard mask layer, the patterned buffer layer and the top electrode layer in the logic circuit region, thereby forming a top electrode on the MTJ stack layer in the memory region and a remaining top electrode layer covering only the logic circuit region on the MTJ stack layer.

The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating two magnetic free layers separated by a perpendicular enhancement layer (PEL) and having a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic reference layer structure includes first, second, and third magnetic reference layers separated by two PELs and having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.

A magnetic structure capable of field-free spin-orbit torque switching includes a spin-orbit coupling base layer and a ferromagnetic layer formed thereon. The spin-orbit coupling base layer is made from a particular crystal material. The ferromagnetic layer has magnetization perpendicular to a plane coupled to the spin-orbit coupling base layer, and is made from a particular ferromagnetic material with perpendicular magnetic anisotropy. The perpendicular magnetization of the ferromagnetic layer is switchable by an in plane current applied to the spin-orbit coupling base layer without application of an external magnetic field. A memory device and a production method regarding the magnetic structure are also provided.