A heterojunction solar cell includes a cell substrate and a conductive layer. The conductive layer includes a first transparent conductive film, a silver electrode, and a second transparent conductive film. The first transparent conductive film is disposed on a surface of the cell substrate, the silver electrode is disposed on a partial region of the first transparent conductive film, and the second transparent conductive film covers the silver electrode and the first transparent conductive film.

In one aspect, a solar cell includes: a monocrystalline silicon substrate; an intrinsic amorphous silicon layer disposed on the monocrystalline silicon substrate; a doped amorphous silicon layer disposed on the intrinsic amorphous silicon layer; a transparent conductive film layer disposed on the doped amorphous silicon layer; and an electrode disposed on the transparent conductive film layer and in direct contact with the doped amorphous silicon layer.

The present disclosure relates to large cell sheets, solar cells, shingled solar modules, and manufacturing method thereof. A top surface of a boundary portion of units of the large cell sheet is divided into a cutting area, top surface bonding areas and top surface electrically-conductive contact areas. The cutting area is configured in a way that the large cell sheet can be cut along the cutting area; the top surface bonding areas and the top surface electrically-conductive contact areas are provided alternately, the cutting area and the top surface electrically-conductive contact areas are formed as an overlapping edge of the solar cell, and after the splitting of the large cell sheet, the top surface electrically-conductive contact areas can directly contact the bottom surface of another solar cell to achieve electrically-conductive connection. The large cell sheet according to the present disclosure can be split conveniently, and the individual solar cells are provided with dedicated bonding areas and electrically-conductive contact areas. Such an arrangement can optimize the production process and use performance of the solar cells.

A solar cell is provided, including: a substrate having a first surface including first regions and second regions, a first passivation contact structure formed on the first and second regions, second passivation contact structures formed on the first passivation contact structure, first passivation films formed on the first passivation contact structure, and first electrodes extending in a second direction perpendicular to the first direction. Each second passivation contact structure has an orthographic projection on the first surface in a respective first region, and each first passivation film has an orthographic projection on the first surface in a respective second region. Each first electrode covers a top surface of a respective second passivation contact structure and at least part of two opposing sidewalls of the respective second passivation contact structure in the first direction, and is in electrical contact with the respective second passivation contact structure.

A solar cell and a manufacturing method thereof, a photovoltaic module, and a photovoltaic system. The manufacturing method includes: providing a substrate; and dividing a second surface of the substrate into a first region, a second region, and an isolation region; sequentially stacking a first tunnel oxide layer, a first intrinsic amorphous silicon layer, a second tunnel oxide layer, and a second intrinsic amorphous silicon layer on the second surface of the substrate; removing the second intrinsic amorphous silicon layer and the second tunnel oxide layer located in the second region; doping the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer located in the first region with a first element, to obtain a first doped layer and a second doped layer respectively; doping the first intrinsic amorphous silicon layer located in the second region with a second element, to obtain a third doped layer; and forming an isolation structure in the isolation region, to isolate the first tunnel oxide layer located in the first region from the first tunnel oxide layer located in the second region and isolate the first doped layer and the second doped layer located in the first region from the third doped layer located in the second region.

Provided are a back-contact battery and a manufacturing method thereof, and a photovoltaic module, which includes a silicon substrate with a front surface and a back surface; a first semiconductor layer with a second semiconductor opening region arranged back surface; and a second semiconductor layer. The back-contact battery further includes multiple insulating layers arranged at intervals along an X-axis direction of the back surface, wherein the insulating layers are arranged on the outer surface of the second semiconductor layer. In the X-axis direction, the insulating layer spans a side-surface edge of the second semiconductor opening region with both ends extending, respectively; the insulating layer has a span length W12 on the second semiconductor opening region, and the insulating layer has a span length W11 on the first semiconductor layer, satisfying a condition: W12:W11=0.1-10:1.

A metal-semiconductor contact structure is provided. The metal-semiconductor contact structure includes a doped silicon-based semiconductor layer and a metal electrode in contact with each other. A contact region between the doped silicon-based semiconductor layer and the metal electrode includes a first conductive region and a second conductive region. In the first conductive region, the metal electrode is recessed towards an inner direction of the doped silicon-based semiconductor layer to form a pit island, a silicon-based eutectic in conductive connection with the doped silicon-based semiconductor layer is provided in the pit island, and a conductive crystal in conductive connection with the silicon-based eutectic is provided. A conductive aggregate including a glass phase material and metal conductive particles is provided in the second conductive region, and the metal conductive particles have a same kind of the metal element as the conductive crystal.

A modified tunnel oxide layer and a preparation method, a TOPCon structure and a preparation method, and a solar cell are provided. The modified tunnel oxide layer is SiO.sub.x subjected to plasma surface treatment, and a Si.sup.4+ content in the SiO.sub.x is greater than or equal to above 18%. The density of the interface state subjected to plasma surface treatment decreases, and compared with the silicon oxide layer prepared in the prior arts, boron has a low diffusion rate in the modified silicon oxide layer and hence the damaging effect of the boron on the tunnel oxide layer is reduced effectively, thereby improving the integrity of the silicon oxide layer and maintaining chemical passivation effect. The modified tunnel oxide layer significantly increases the performance indexes of the TOPCon structure.

A back contact solar cell includes a semiconductor substrate, a first functional layer, a second functional layer, a laser protection layer, a first electrode structure, and a second electrode structure. The semiconductor substrate has a light-receiving surface and a shady surface. The first functional layer is formed in the first polarity region. The second functional layer is formed in the second polarity region. The laser protection layer is formed on a side of the second functional layer away from the semiconductor substrate and exposes an electrode contact region of the second functional layer. The laser protection layer includes laser absorption material. The first electrode structure is formed on a side of the first functional layer away from the semiconductor substrate. The second electrode structure is formed on a side of the second functional layer away from the semiconductor substrate, and the second electrode structure is in the electrode contact region.

A solar cell and a photovoltaic module. The solar cell includes a substrate having a first surface and a second surface arranged oppositely, the second surface including a first region, a second region, and an isolation region located between the first region and the second region; a first tunnel oxide layer, a first doped layer, a second tunnel oxide layer, and a second doped layer located in the first region and sequentially stacked in a direction away from the substrate; the first tunnel oxide layer and a third doped layer located in the second region and sequentially stacked in a direction away from the substrate; and an isolation structure located in the isolation region and configured to isolate the first tunnel oxide layer located in the first region from the first tunnel oxide layer located in the second region, the isolation structure further configured to isolate the first doped layer and the second doped layer located in the first region from the third doped layer located in the second region.