A high power solar cell module including a cover plate, a back plate, a first encapsulation, a second encapsulation, a plurality of N type hetero-junction solar cells, and a plurality of reflective connection ribbons is provided. The back plate is opposite to the cover plate. The first encapsulation is located between the cover plate and the back plate. The second encapsulation is located between the first encapsulation and the back plate. The N type hetero-junction solar cells and the reflective connection ribbons are located between the first encapsulation and the second encapsulation, and any two adjacent N type hetero junction solar cells are connected in series along a first direction by at least one of the reflective connection ribbons, wherein each of the reflective connection ribbons has a plurality of triangle columnar structures. Each of the triangle columnar structures points to the cover plate and extends along the first direction.

Provided is a solar cell that can suppress loss of power generation performance of a solar cell module when shaded and a solar cell module having the solar cell. An n-type low-doped region and a first main-surface side highly doped region, which has an n-type dopant concentration higher than that in the n-type low-doped region, are provided in an n-type crystalline silicon substrate. The first main-surface side highly doped region is arranged between the n-type low-doped region and a p-type amorphous silicon layer.

A solar cell module is provided with: a plurality of solar cells, each of which comprises a first electrode and a second electrode that are formed on a photoelectric conversion unit; and a wiring material that is fitted on the first electrode and the second electrode using an adhesive and connects the solar cells with each other. The adhesive is provided so as to extend beyond a region (R) directly below the wiring material and to adhere to a lateral surface of the wiring material. The solar cell module has a pore in the region (R) directly below the wiring material.

Disclosed herein are a solar cell and a method of manufacturing the same. The solar cell module includes a semiconductor substrate, a first passivation film located on a front surface of the semiconductor substrate, a second passivation film located on a rear surface of the semiconductor substrate, a front electric field region located on the first passivation film on the front surface of the semiconductor substrate and being of a same conductivity-type as that of the semiconductor substrate, an emitter region located on the second passivation film on the rear surface of the semiconductor substrate and being of a conductivity-type opposite that of the semiconductor substrate, first electrodes conductively connected to the front electric field region, and second electrode conductively connected to the emitter region.

Disclosed is a manufacturing method of a solar cell, including forming a photoelectric converter including an amorphous semiconductor layer, forming an electrode connected to the photoelectric converter, and performing a post-treatment by providing light to the photoelectric converter and the electrode.

A photovoltaic structure can include two or more sets of parallel conductive fingers on a top surface and a bottom surface, such that the fingers can collect an electric current from the underlying photovoltaic structure. A scribing system can scribe a groove of a predetermined depth near and perpendicular to the plurality of fingers of the photovoltaic structure, and the photovoltaic structure can be cleaved along the groove to produce multiple strips that each can include a set of parallel fingers. An adhesive dispense system may deposit a band of conductive adhesive that can overlap a set of parallel fingers on each strip, and the strips may be overlapped over the conductive adhesive to form a string of cascaded strips. An adhesive-curing system can include an oven that may cure the conductive adhesive on one or more strips of the string at a time.

An n-type low-doped region and a first main-surface side highly doped region, which has an n-type dopant concentration higher than that in the n-type low-doped region, are provided in an n-type crystalline silicon substrate. The first main-surface side highly doped region is arranged between the n-type low-doped region and a p-type amorphous silicon layer.

One embodiment of the invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can form a sacrificial layer on a first side of a Si substrate; load the Si substrate into a chemical vapor deposition tool, with the sacrificial layer in contact with a wafer carrier; and form a first doped Si layer on a second side of the Si substrate. The system subsequently can remove the sacrificial layer; load the Si substrate into a chemical vapor deposition tool, with the first doped Si layer facing a wafer carrier; and form a second doped Si layer on the first side of the Si substrate.

A photovoltaic device includes a digital alloy buffer layer including a plurality of alternating layers of semiconductor material. An absorption layer epitaxially is grown on the digital alloy buffer layer, an intrinsic layer is formed on the absorption layer and a doped layer is formed on the intrinsic layer. A conductive contact is formed on the doped layer.

There is provided a photoelectric conversion element which includes an n-type single crystal silicon substrate (1). The n-type single crystal silicon substrate (1) includes a central region (11) and an end-portion region (12). The central region (11) is a region which has the same central point as the central point of the n-type single crystal silicon substrate (1) and is surrounded by a circle. The diameter of the circle is set to be a length which is 40% of a length of the shortest side among four sides of the n-type single crystal silicon substrate (1). The central region (11) has a thickness t1. The end-portion region (12) is a region of being within 5 mm from an edge of the n-type single crystal silicon substrate (1). The end-portion region (12) is disposed on an outside of the central region (11) in an in-plane direction of the n-type single crystal silicon substrate (1), and has a thickness t2 which is thinner than the thickness t1. The end-portion region (12) has average surface roughness which is smaller than average surface roughness of the central region (11).