A semiconductor device includes a first conductivity type semiconductor substrate, a second conductivity type first and second buried diffusion layers that are arranged in the semiconductor substrate, a semiconductor layer arranged on the semiconductor substrate, a second conductivity type first impurity diffusion region that is arranged in the semiconductor layer, a second conductivity type second impurity diffusion region that is arranged, in the semiconductor layer, on the second buried diffusion layer, a second conductivity type first well that is arranged in a first region of the semiconductor layer, a first conductivity type second well that is arranged, in the semiconductor layer, in a second region, a first conductivity type third and fourth impurity diffusion regions that are arranged in the first well, and a first conductivity type fifth impurity diffusion region that is arranged in the second well.

A semiconductor device is provided in which a zener diode having a desired breakdown voltage and a capacitor in which voltage dependence of capacitance is reduced are mounted together, and various circuits are realized. The semiconductor device includes: a semiconductor layer; a first conductivity type well that is arranged in a first region of the semiconductor layer; a first conductivity type first impurity diffusion region that is arranged in the well; a first conductivity type second impurity diffusion region that is arranged in a second region of the semiconductor layer; an insulating film that is arranged on the second impurity diffusion region; an electrode that is arranged on the insulating film; and a second conductivity type third impurity diffusion region that is arranged at least on the first impurity diffusion region.

A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.

An active rectifier of a rotary electric machine, in particular an active rectifier for alternators, for example for rectifying alternating currents (AC) to direct currents (DC) for charging batteries on vehicles, is disclosed. The active rectifier may include a plurality of power MOSFET transistors and a detecting and driving circuitry all mounted on a single substrate to form a half-bridge module. A number of at least two and up to N modules may be connected together to serve as a two and up to N-phase rectifier. Each module is connected in a way to rectify currents from one phase of the electric machine and has an individual power supply for the detecting and driving circuitry. The power supply may receive the power from the phase which is being rectified and operates independently of the alternator's voltage regulator.

A lead frame for an LED package includes a substrate and a bonding electrode, a first connecting electrode, and a second connecting electrode embedded in the substrate. A top surface of the bonding electrode includes a first bonding surface and a second bonding surface spaced from the first bonding surface. A top surface of the first connecting electrode includes separated first and second connecting surfaces. Top surfaces of the bonding electrode, the first connecting electrode, and the second connecting electrode are exposed, and support and electrically connect with light emitting chips. LED packages can be mounted on the lead frame and electrically connect with each other. The conductive layout of the lead frame further permits installation of a zener diode which can be connected to the LED packages in series or in parallel.

A light-emitting apparatus includes a light-emitting, a first lead, a second lead, and a resin molded body configured to support the first lead and the second lead. The main surfaces of the first and second leads includes first and second coverage areas covered by the resin molded body and first and second exposure regions exposed from the resin molded body at a window portion of the resin molded body, respectively. First and second metal layers are provided to cover main surfaces of the first and second leads at first and second exposure regions, respectively.

A common mode filter coupled to a protection device. In accordance with an embodiment, the common mode filter has first and second coils, each coil having a spiral shape, a central region, an exterior region, a first terminal, and a second terminal, wherein the first terminal of the first coil is formed in a first portion of the central region, the first terminal of the second coil is formed in a second portion of the central region, and wherein the central region is laterally bounded by the first and second coils and the exterior region is not surrounded by the first and second coils. The protection device has a first terminal coupled to the first terminal of the first coil and a second terminal coupled to the first terminal of the second coil.

A method of manufacturing a light emitting device includes: mounting light emitting elements on a collective substrate; arranging a first protruding member surrounding the light emitting elements; arranging a second protruding member between the light emitting elements; forming a cover member covering an upper end of the second protruding member, a lateral surface of each of the light emitting elements in a region surrounded by the first protruding member; and singulating the light emitting devices by cutting the cover member, the second protruding member, and the collective substrate at a portion including the second protruding member. The second protruding member is harder than the cover member. An upper end of the second protruding member is located lower than that of the first protruding member but higher than the upper surface of each of the light emitting elements.

A method of manufacturing a light-emitting device incudes providing a supporting member having a recess; disposing a light-emitting element at a bottom surface of the recess; disposing a first light-reflecting resin at the bottom surface of the recess; disposing a second light-reflecting resin in the recess, a viscosity of the second light-reflecting resin being higher than a viscosity of the first light-reflecting resin; and curing the first light-reflecting resin and the second light-reflecting resin to form a light-reflecting wall.

A semiconductor device includes a first well region, a second well region, a body region, and a cathode region. The impurity concentration of the body region is higher than the impurity concentration of the first well region, and the impurity concentration of the second well region is higher than the impurity concentration of the body region. In plan view, the body region includes the cathode region, and the cathode region includes the second well region. The cathode region configures a cathode of a Zener diode, and the first well region, the second well region, and the body region configure an anode of the Zener diode.