A compact LED module and a method of manufacturing such an LED module are provided. The LED module includes a first-pole first lead, a first-pole second lead, a first-pole third lead, a second-pole first lead, a second-pole second lead, a second-pole third lead, a first LED chip, a second LED chip, a third LED chip, and a housing. A distal end of the first-pole first lead is offset toward a second-pole side in a first direction with respect to both a distal end of the second-pole second lead and a distal end of the second-pole third lead.

A light emitting device includes a package having a recess which includes a bottom surface. A first bottom surface of a first light emitting element is put on a first part of the bottom surface. A second bottom surface of a second light emitting element is put on the first part of the bottom surface. A first side surface of the first light emitting element is opposite to a second side surface of the second light emitting element with a gap. At least a part of the first side surface does not overlap with the second side surface viewed in a direction perpendicular to the first side surface. A protection element is provided at a second part of the bottom surface. A light reflective material covers the protection element.

A diffusion diode including a p.sup.+ diffusion region, a p-type diffusion region, and an n.sup.+ diffusion region is formed in the front surface of a semiconductor substrate. A polysilicon diode including a p.sup.+ layer and an n.sup.+ layer is formed on top of a local insulating film formed on the front surface of the semiconductor substrate and faces the diffusion diode in the depth direction. The diffusion diode and the polysilicon diode are reverse-connected by electrically connecting the n.sup.+ diffusion region to the n.sup.+ layer, thereby forming a lateral protection device. The p.sup.+ layer and p.sup.+ diffusion region are respectively electrically connected to a high voltage first terminal and a low voltage second terminal of the lateral protection device. The polysilicon diode blocks a forward current generated in the diffusion diode when the electric potential of the first terminal becomes lower than the electric potential of the second terminal.

A bidirectional Zener diode includes a substrate. A first conductivity type base region is formed in a surficial portion of the substrate. A second conductivity type first impurity region is formed in a surficial portion of the base region so as to form a pn junction with the base region. A second conductivity type second impurity region is formed in a surficial portion of the base region in a manner spaced apart from the first impurity region so as to form a pn junction with the base region. A first electrode is arranged at the surface of the substrate. A second electrode is arranged at the surface of the substrate. A dimension of the base region along the surface of the substrate between the first impurity region and the second impurity region is equal to or greater than 4.0 m and equal to or smaller than 12.5 m.

A manufacturing method of an LED package structure includes the steps as follows: providing an LED package structure assembly, which has a substrate layer, an LED chip set located on the substrate layer, and an encapsulating gel layer covering the LED chip set; taking a first blade to saw the LED package structure assembly from the encapsulating gel layer to the substrate layer until a plurality of sawing grooves are formed on the substrate layer; and taking a second blade to saw the LED package structure assembly along each sawing groove until the second blade passes through the substrate layer, thereby forming a plurality of LED package structures separated from each other. Wherein a hardness of the first blade is greater than that of the second blade, and a thickness of the second blade is less than that of the first blade.

A semiconductor device includes a substrate, a well region of a first-conductivity type disposed in the substrate, a first impurity region of a second-conductivity type and having a plurality of branches disposed in the well region, a second impurity region of the first-conductivity type and having a plurality of branches, and a third impurity region of the first-conductivity type disposed in the well region. The second-conductivity type is opposite to the first-conductivity type. A portion of the first impurity region overlaps a portion of the third impurity region. The plurality of branches of the second impurity region are disposed in the third impurity region, and a portion of the third impurity region is disposed between the first impurity region and the second impurity region.

An LED package includes an LED element, a board having an obverse face and a mounting face opposite to the obverse face, a conductive part formed on both the obverse face and the mounting face of the board and having an installation face upon which the LED element is disposed, a case having a reflective face that encloses the LED element and defines a through area, and a lid having a top face and a back face. The lid is disposed on the case so that the back face of the lid is directed to the case. The back face of the lid is formed with a convex lens portion protruding toward the LED element so as to be accommodated in the through area of the case.

A diode includes a semiconductor substrate having a surface; a first contact region disposed at the surface of the semiconductor substrate and having a first conductivity type; and a second contact region disposed at the surface, laterally spaced from the first contact region, and having a second conductivity type. The diode also includes a buried region disposed in the semiconductor substrate vertically adjacent to the first contact region, having the second conductivity type, and electrically connected with the second contact region; and an isolation region disposed at the surface between the first and second contact regions. The diode also includes a separation region disposed at the surface between the first contact region and the isolation region, the separation region formed from a portion of a first well region disposed in the semiconductor substrate that extends to the surface.

An LED (Light Emitting Diode) module includes an LED unit having one or more LED chips and a case. The case includes: a body including a base plate made of ceramic, the base plate having a main surface and a bottom surface opposite to the main surface; a through conductor penetrating through the base plate; and one or more pads formed on the main surface and making conductive connection with the through conductor, the pads mounting thereon the LED unit. The through conductor includes a main surface exposed portion exposed to the main surface and overlapping the LED unit when viewed from top, a bottom surface reaching portion connected to the main surface exposed portion and reaching the bottom surface. The pads cover at least a portion of the main surface exposed portion.

A transient voltage suppressor can include: a semiconductor substrate; a first buried layer of a first type formed in and on the semiconductor substrate; a second buried layer of a second type formed in a first region of the first buried layer; a first epitaxial region of the second type formed on the second buried layer and a second epitaxial region of the first type formed on a second region of the first buried layer; a first doped region of the first type formed in the first epitaxial region and a second doped region of the second type formed in the second epitaxial region; a conductive channel extending from a surface of the second epitaxial region into the first buried layer; and a first electrode connected to the conductive channel, a second electrode connected to the first doped region, and a third electrode connected to the second doped region.