A sample transfer system includes a sample-mounting member mounting a sample thereonto; and a sample-moving device lifting the sample to move the sample between the sample-mounting member and another location, wherein the sample-mounting member comprises: a first predetermined sample-mounting region mounting the sample; and a recessed part on or around a side of the first predetermined sample-mounting region, wherein the sample-moving device comprises a first sample-holding device, the first sample-holding device comprising: a sample-holding surface facing the sample to be lifted; a first contact member contacting with part of the sample; and a movement mechanism moving the first contact member in a direction along the sample-holding surface, and wherein part of the contact member enters the recessed part when the first sample-holding device is brought in proximity to the first predetermined sample-mounting region, the part of the contact member moving within the recessed part by operating the movement mechanism.

The invention relates to a passivated emitter rear solar cell, comprising a silicon substrate having a front and back surface, a rear passivation layer on the back surface of the silicon substrate having a plurality of open holes formed therein, an aluminum back contact layer formed in the open holes of the rear passivation layer, and at least one backside soldering tab on the back surface of the silicon substrate. The backside soldering tab is formed from an electroconductive paste composition comprising conductive metallic particles, at least one lead-free glass frit, and an organic vehicle comprising at least one silicone oil.

By using a coating method, which is a simple method of manufacturing a transparent conductive film at low cost, a transparent conductive film formed with heating at a low temperature, in particular, lower than 300 C. with both of excellent transparency and conductivity and also with excellent film strength and a method of manufacturing this transparent conductive film are provided.

Disclosed is a manganese tin oxide-based transparent conducting oxide (TCO) with an optimized composition, which has low surface roughness, low sheet resistance and high transmittance even when deposited at room temperature, a multilayer transparent conductive film using the same and a method for fabricating the same. The manganese tin oxide-based transparent conducting oxide has a composition of Mn.sub.xSn.sub.1-xO (0<x0.055), and the multilayer transparent conductive film includes: a manganese tin oxide-based transparent conducting oxide having a composition of Mn.sub.xSn.sub.1-xO (0<x0.055); a metal thin film deposited on the manganese tin oxide-based transparent conducting oxide; and a manganese tin oxide-based transparent conducting oxide having a composition of Mn.sub.xSn.sub.1-xO (0<x0.055) deposited on the metal thin film.

An electrical conductor including a substrate, a first conductive layer including graphene, and a second conductive layer including a conductive metal nanowire, wherein the first conductive layer and the second conductive layer are disposed on the substrate, wherein the first conductive layer is disposed between the substrate and the second conductive layer or on the second conductive layer, wherein the first conductive layer has a first surface facing the second conductive layer and a second surface which is opposite to the first surface, and wherein, in the first surface and the second surface, the graphene is p-doped with a p-type dopant.

Systems and methods for fabricating a photovoltaic structure are provided. During fabrication, a patterned mask is formed on a first surface of a multilayer body of the photovoltaic structure, with openings of the mask corresponding to grid line locations of a first grid. Subsequently, a core layer of the first grid is deposited in the openings of the patterned mask, and a protective layer is deposited on an exposed surface of the core layer. The patterned mask is then removed to expose the sidewalls of the core layer. Heat is applied to the protective layer such that the protective layer reflows to cover both the exposed surface and sidewalls of the core layer.

In one embodiment, a method is provided for fabrication of a semitransparent conductive mesh. A first solution having conductive nanowires suspended therein and a second solution having nanoparticles suspended therein are sprayed toward a substrate, the spraying forming a mist. The mist is processed, while on the substrate, to provide a semitransparent conductive material in the form of a mesh having the conductive nanowires and nanoparticles. The nanoparticles are configured and arranged to direct light passing through the mesh. Connections between the nanowires provide conductivity through the mesh.

A method of increasing a work function of an electrode is provided. The method comprises obtaining an electronegative species from a precursor using electromagnetic radiation and reacting a surface of the electrode with the electronegative species. An electrode comprising a functionalized substrate is also provided.

An integration method of fabricating optical sensor device and thin film transistor device includes the follow steps. A substrate is provided, and a gate electrode and a bottom electrode are formed on the substrate. A first insulating layer is formed on the gate electrode and the bottom electrode, and the first insulating layer at least partially exposes the bottom electrode. An optical sensing pattern is formed on the bottom electrode. A patterned transparent semiconductor layer is formed on the first insulating layer, wherein the patterned transparent semiconductor layer includes a first transparent semiconductor pattern covering the gate electrode, and a second transparent semiconductor pattern covering the optical sensing pattern. A source electrode and a drain electrode are formed on the first transparent semiconductor pattern. A modification process including introducing at least one gas is performed on the second transparent semiconductor pattern to transfer the second transparent semiconductor pattern into a conductive transparent top electrode.

Methods are described that include reacting a starting nanocrystal that includes a starting nanocrystal core and a covalently bound surface species to create an ion-exchangeable (IE) nanocrystal that includes a surface charge and a first ion-exchangeable (IE) surface ligand ionically bound to the surface charge, where the starting nanocrystal core includes a group IV element.