A solar cell includes: a semiconductor substrate having a light receiving surface and a back surface; a first semiconductor layer of the first conductivity type on the back surface; a second semiconductor layer of the second conductivity type on the back surface; a first electrode electrically connected to the first semiconductor layer; and an insulating layer for electrically insulating the first semiconductor layer and the second semiconductor layer from each other in a region in which an edge of the first semiconductor layer and an edge of second semiconductor layer overlap. The first electrode includes a first transparent electrode layer and a first collection electrode layer on the first transparent electrode layer. The first transparent electrode layer is separated into a primary electrode layer that is on the first semiconductor layer and a separated electrode layer that is on the second semiconductor layer in the region.

Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing).

A microwave-annealed indium gallium zinc oxide (IGZO) film and methods of making the same are disclosed. The methods may comprise: depositing an IGZO film onto a substrate; and microwave annealing the IGZO film to produce a microwave-annealed IGZO film.

A solar cell including at least a first layer made of a semiconductor material for absorbing photons from light radiation and releasing charge carriers, and at least one conductive layer, overlapping the first layer, adapted to allow the light radiation to enter into the solar cell towards the first layer and to collect the charge carriers released by the first layer, the solar cell where the conductive layer includes at least three overlapped layers, including a transparent intermediate metal layer, made of metal, and two transparent oxide layers, made of a conductive oxide, where the two oxide layers are an inner oxide layer and an outer oxide layer surrounding the transparent intermediate metal layer to provide a low resistance path for the electrical charges and to maximize the amount of light radiation entering the solar cell. The embodiments also include a solar cells module including said solar cell.

A high transmittance thin film solar panel includes a transparent substrate, a front electrode layer, a light absorption layer and a rear electrode layer. The light absorption layer is formed with opening patterns with the same width at positions aligned correspondingly to form at least one first opening trench, a plurality of second opening trenches with continuously and periodically sinusoidal-wave shape, and a plurality of third opening trenches parallel to, interlace with or superpose the second opening trenches, and extend in a direction orthogonal to the direction of the first opening trench. The high transmittance thin film solar panel of the present invention is mainly used for green buildings. The opening trenches of the high transmittance thin film solar panel are formed in a manner of curve shape by an oscillating laser head, and can enhance the transmittance by more than about 3% in comparison with the conventional one.

Kesterite-based homojunction photovoltaic devices are provided. The photovoltaic devices include a p-type semiconductor layer including a copper-zinc-tin containing chalcogenide compound and an n-type semiconductor layer including a silver-zinc-tin containing chalcogenide compound having a crystalline structure the same as a crystalline structure the copper-zinc-tin containing chalcogenide compound.

The present disclosure provides a transparent conductive contact passivation heterojunction solar cell and a cell component, the heterojunction solar cell comprises a silicon substrate, a tunneling layer, a first transparent conductive film layer and an anti-reflection layer, wherein: the silicon substrate has a first surface and a second surface opposite to each other, and the first surface is closer to a light-facing side of the heterojunction solar cell than the second surface; the tunneling layer, the first transparent conductive film layer and the anti-reflection layer are located on the first surface in sequence. The heterojunction solar cell and cell component provided by this disclosure can increase the short-circuit current of the heterojunction solar cell, improve the efficiency of the solar cell, and achieve a better passivation effect overall.

A solar cell, a preparation method thereof, a photovoltaic module, and a photovoltaic system, wherein the solar cell includes a substrate and a first tunnel oxide layer and a passivation medium layer sequentially stacked on a first surface of the substrate. The first tunnel oxide layer is at least partially in contact with the first surface. The passivation medium layer includes at least a transparent conductive oxide layer.

A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSe.sub.xTe.sub.(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of Cd.sub.yZn.sub.(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium.

A metal-semiconductor contact structure is provided. The metal-semiconductor contact structure includes a doped silicon-based semiconductor layer and a metal electrode in contact with each other. A contact region between the doped silicon-based semiconductor layer and the metal electrode includes a first conductive region and a second conductive region. In the first conductive region, the metal electrode is recessed towards an inner direction of the doped silicon-based semiconductor layer to form a pit island, a silicon-based eutectic in conductive connection with the doped silicon-based semiconductor layer is provided in the pit island, and a conductive crystal in conductive connection with the silicon-based eutectic is provided. A conductive aggregate including a glass phase material and metal conductive particles is provided in the second conductive region, and the metal conductive particles have a same kind of the metal element as the conductive crystal.