An electricity generating window includes a first glass pane, a second glass pane, and a photovoltaic device formed on an inner surface of the first glass pane or an inner surface of the second glass pane. The photovoltaic device includes a first transparent electrode layer, a second transparent electrode layer, and one or more active layers configured to transmit visible light and absorb ultraviolet or near-infrared light. In some embodiments, the electricity generating window also includes a spacer configured to separate the first glass pane and the second glass pane by a cavity. In some embodiments, the electricity generating window also includes one or more functional layers, such as an electrochromic layer or a low-E layer for reflecting infrared light.

The technique relates to a method for preparing a nanomesh metal membrane 5 transferable on a very wide variety of supports of different types and shapes comprising at least one step of de-alloying 1 a thin layer 6 of a metal alloy deposited on a substrate 7, said method being characterized in that said thin layer 6 has a thickness less than 100 nm, and in that said de-alloying step 1 is carried out by exposing said thin layer 6 to an acid vapor in the gas phase 8, in order to form said nanomesh metal membrane 5.

Photovoltaic devices having transparent contact layers are described herein.

A photovoltaic cell (1) including a first front collector layer (4), an amorphous silicon layer (6) on the first layer (4) and a second conductive layer (8) on the amorphous silicon layer (6). Electrical connection of the second conductive layer (8) to the first layer (4) is made through the amorphous silicon layer (6) at the periphery of the photovoltaic cell, the electrically conductive layer (8) comprising a positive peripheral bus (8), which is connected to the TCO first layer (4) and to at least one positive connection terminal at one end of the positive peripheral bus, and a negative peripheral bus, which is connected to a negative connection terminal, and the positive and negative peripheral buses being asymmetrical relative to one another, with the positive peripheral bus being longer than the negative peripheral bus.

A photodetector includes a first semiconductor layer including germanium, a conductive layer that, in conjunction with the first semiconductor layer, forms a Schottky junction structure, and a tunneling barrier layer positioned between the first semiconductor layer and the conductive layer and configured to prevent dark current between the first semiconductor layer and the conductive layer.

A conducting film or device multilayer electrode includes a substrate and two transparent or semitransparent conductive layers separated by a transparent or semitransparent intervening layer. The intervening layer includes electrically conductive pathways between the first and second conductive layers to help reduce interfacial reflections occurring between particular layers in devices incorporating the conducting film or electrode.

The invention relates to a flexible film comprising a polymer substrate, a first transparent conductive oxide layer on the substrate, a gold-containing layer on the dielectric layer and an overlayer consisting of a dielectric layer or a second transparent conductive oxide layer on the gold-containing layer, wherein said first transparent conductive oxide layer is based on aluminum-doped zinc oxide.

A conductive thin film, a transparent electrode, and methods of producing the same are provided. A method for preparing a conductive thin film may involve forming a layer of reduced graphene oxide and carbon nanotube on a substrate using a reducing agent containing a halogen atom.

Methods for fabricating busbar and finger metallization over TCO are disclosed. Rather than using expensive and relatively resistive silver paste, a high conductivity and relatively low cost copper is used. Methods for enabling the use of copper as busbar and fingers over a TCO are disclosed, providing good adhesion while preventing migration of the copper into the TCO. Also, provisions are made for easy soldering contacts to the copper busbars.

There are provided a transparent conductive film and a method for preparing the same. The transparent conductive film of the present application comprises a compound having a crystalline structure and represented by Chemical Formula 1 and thus can be applied as a technology substituting for conventional ITO conductive films.