A transparent electronic device includes an organic film, an amorphous transparent oxycarbide layer, and a matrix layer. The organic film includes a polymer containing carboxyl groups (COOH). The amorphous transparent oxycarbide layer is disposed on the organic film and consists of a metal element, carbon element, oxygen element and an additional element. The metal element is selected from molybdenum (Mo), indium (In), tin (Sn), zinc (Zn), cadmium (Cd) and a combination thereof. An atomic number percentage of the additional element is equal to or greater than 0%, and is less than the least of an atomic number percentage of the metal element, an atomic number percentage of the oxygen element and an atomic number percentage of the carbon element. The matrix layer is disposed on the amorphous transparent oxycarbide layer. A manufacturing method of a transparent electronic device is also provided.

This application provides a heterojunction solar cell and a preparation method. The heterojunction solar cell includes: a silicon substrate being n-type or p-type doped, and having a front surface and a back surface opposite to each other; a first passivation layer and a second passivation layer sequentially located on the front surface of the silicon substrate; a third passivation layer and a fourth passivation layer sequentially located on the back surface of the silicon substrate; a silicon oxycarbide layer located on a surface of the fourth passivation layer away from the silicon substrate, wherein the silicon oxycarbide layer is n-type or p-type doped to form PN junction with the silicon substrate, an atomic percentage of carbon is greater than an atomic percentage of oxygen in the silicon oxycarbide layer. The heterojunction solar cell of the present application improves the performance of the solar cell. The carbon and the oxygen in the silicon oxycarbide layer have a fixed effect on the hydrogen, which is beneficial for reducing the loss of hydrogen.

Disclosed herein are devices, systems, and methods for processing a solar cell precursor. The processing may include forming a transparent, electrically conductive first layer over the solar cell precursor. The processing may also include forming a transparent, electrically conductive second layer over the solar cell precursor, preferably in physical contact with the first layer. The first layer may comprise at least indium, zinc, and oxygen and the second layer may comprise oxygen and a greater proportion of indium than the first layer.

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

The solar cell includes: a substrate, a tunneling dielectric layer disposed over the substrate and a doped conductive layer formed over the tunneling dielectric layer. The doped conductive layer includes main body portions and first connecting portions. Each of the main body portions extends in a first direction, and the main body portions are arranged at intervals along a second direction perpendicular to the first direction. At least one first connecting portion in the first connecting portions is located between every two adjacent main body portions and in contact with each of the two adjacent main body portions. The solar cell further includes first electrodes each extending in the first direction. The first electrodes respectively correspond to the main body portions and are arranged at intervals along the second direction, and each first electrode is disposed on and electrically connected to a corresponding one of the main body portions.

Disclosed are a semiconductor substrate and a treating method thereof, a solar cell and a preparation method thereof. The method for treating a semiconductor substrate includes forming a smooth surface area and a textured surface area adjacent to the smooth surface area on at least one side of the semiconductor substrate. The area of the smooth surface area is greater than or equal to that of the textured surface area. A smooth surface area and a textured surface area adjacent to the smooth surface area are formed on at least one side of the semiconductor substrate, so that the transparent conductive film is located and only located on the smooth surface area. A grid line is formed on the side of the corresponding to the transparent conductive film facing away from the semiconductor substrate, thereby improving the photovoltaic conversion efficiency of the solar cell.

The present disclosure provides a back-contact solar cell, a fabrication method, and a solar-cell assembly. In one aspect, a back-contact solar cell includes a solar-cell body and an isolating groove. The solar-cell body includes a silicon substrate, a first semiconductor layer in a first region of a back surface of the silicon substrate, a second semiconductor layer having a portion in a second region of the back surface, and a transparent conductive film layer stacked on the first and second semiconductor layers. The isolating groove extends through the second semiconductor layer and the transparent conductive film layer. An area of a cross section of the isolating groove decreases towards the silicon substrate, and the cross section is parallel to the silicon substrate.

An interconnected electrode structure is provided. The interconnected electrode structure includes an insulating base material, a through hole, a first conductive body, and a second conductive body. The insulating base material includes a first surface and a second surface which face away from each other. The through hole penetrates through the insulating base material in a thickness direction. The first conductive body is formed by conductive slurry that enters the through hole from an opening of the through hole on the first surface. The second conductive body is formed by a second conductive material that enters the through hole from an opening of the through hole on the second surface, and the second conductive body is electrically combined with the first conductive body to form a conductive channel in the insulating base material.

A solar cell according to an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer on the p-electrode, and an n-type layer between the p-type light-absorbing layer and the n-electrode. A first region is included in the p-type light-absorbing layer from a surface on the n-type layer side toward the p-electrode. The first region includes n-type dopant. A thickness of the first region is 1500 [nm] or more and a thickness of the p-type light-absorbing layer [nm]. A concentration of the n-type dopant of the first region is 1.010.sup.14 [cm.sup.3] or more and 1.010.sup.19 [cm.sup.3] or less. The concentration of the n-type dopant of the first region and a concentration of hole of the first region satisfy 10 the concentration of the n-type dopant/the concentration of hole 5.010.sup.26.

Photovoltaic module with a plurality of thin film photovoltaic cells (2). Each thin film photovoltaic cell (2) has a transparent electrode (12) provided on a transparent substrate (11), a solar cell stack (13) positioned on the transparent electrode (12), and a top electrode (14) positioned on the solar cell stack (13). A plurality of parallel connected PV cell units (3) are provided, each comprising a string of series connected PV cells (2). A positive connection part (6, 20a) and a negative connection part (5, 20b) are present in a single top interconnection layer, providing the parallel connection circuit of the parallel connected PV cell units (3). At least one cross over connection member (9a, 9b) is present in a layer different from the single top interconnection layer, which provides an electrical connection in the negative connection part (5, 20b) and/or in the positive connection part (6, 20a).