Devices, methods and techniques related to photoconductive switches using diamond are disclosed. In one example aspect, a photoconductive apparatus includes a diamond layer positioned to receive a light. The diamond layer is doped with nitrogen. The apparatus also includes a first electrode coupled to the diamond layer to provide a first electrical contact for the diamond layer, and a second electrode coupled to the diamond layer to provide a second electrical contact for the diamond layer and configured to reflect the light back to the diamond layer. The first electrode and the second electrode are configured to establish an electric field across the diamond layer in response to receiving the light.

There is provided a fabrication method of conductive nanonetworks through adaptation of a sacrificial layer includes: forming nanowire networks on a substrate; forming the sacrificial layer on a front surface of the substrate including the nanowire networks; removing the nanowire networks to expose a surface of the substrate within a region from which the nanowire networks are removed; forming a conductive material on the front surface of the substrate to fill the region, from which the nanowire networks are removed, with the conductive material while forming the conductive material on the sacrificial layer; and forming conductive nanonetworks made of the conductive material which fills the region from which the nanowire networks are removed, by removing the sacrificial layer.

The solar cell includes: a substrate; a tunneling dielectric layer disposed over a first surface of the substrate; a plurality of doped conductive layers arranged at intervals over the tunneling dielectric layer; a plurality of first electrodes each extending in a first direction, where the plurality of first electrodes are arranged at intervals along a second direction, and each first electrode is disposed on and electrically connected to a corresponding one of the plurality of doped conductive layers; and at least one conductive transport layer, where the at least one conductive transport layer includes a respective conductive transport layer between every two adjacent doped conductive layers and in contact with a side surface of each of the two adjacent doped conductive layers. The at least one conductive transport layer and the plurality of doped conductive layers are doped with doping ions of a same type.

Provided herein are MXene-containing photodetectors and related methods. Also provided are MXene-containing THz polarizers as well as MXene-containing MOSFETs, MESFETs, and HEMFETs.

This application provides a solar cell, a preparation method therefor, and a photovoltaic module. In one aspect, a solar cell includes a silicon substrate, and a low-absorption coefficient layer arranged on a light-receiving surface of the silicon substrate. The low-absorption coefficient layer and the light-receiving surface of the silicon substrate have a same conductivity type. An absorption coefficient of the low-absorption coefficient layer is less than an absorption coefficient of the silicon substrate in a wavelength band of less than or equal to 400 nm. A thickness of the low-absorption coefficient layer ranges from 15 to 200 nm. The low-absorption coefficient layer is in contact with the silicon substrate.

An infrared photodiode includes a first electrode including a reflective layer, a second electrode facing the first electrode, and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes an infrared absorbing material. A maximum absorption wavelength of the infrared absorbing material in a solution state is greater than about 700 nm and less than or equal to about 950 nm. The infrared photodiode is configured to exhibit an external quantum efficiency (EQE) spectrum in a wavelength region of greater than or equal to about 1000 nm.

A solar cell comprises a substrate having an opposite first surface and a second surface, and the second surface has a first regions and a second regions adjacent in the first direction; a first passivation layer located on the first surface; a first doped layer and a tunnel oxide layer sequentially stacked in the first region; a first insulating layer located on a surface of the first doped layer away from the substrate; a second passivation layer located in the second region and extending to a surface of the first insulating layer away from the substrate; a second doped layer located on a surface of the second passivation layer away from the substrate, and a second insulating layer located between the second passivation layer and the first doped layer, the tunnel oxide layer in the first direction, a surface of the second insulating layer away from the substrate contacting with the first insulating layer.

The present disclosure provides a hybrid heterojunction solar cell, a cell component, and a preparation method, the hybrid heterojunction solar cell comprises a semiconductor substrate having a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a light-facing side of the cell and the substrate back surface is close to a backlight side of the cell; at least two composite layers located on one side of the substrate front surface, each composite layer includes a multi-layer structure of a tunneling layer and a doped polysilicon layer sequentially arranged in a direction gradually away from the substrate front surface. The hybrid heterojunction solar cell, cell component and a preparation method provided by this disclosure can achieve a stable passivation effect on the cell surface, reduce light absorption in the non-metallic areas of the cell, and achieve better process control at the same time.

A solar cell, comprising a silicon cell main body (110), a first transparent conductive oxide layer (120), a second transparent conductive oxide layer (130), an insulating passivation layer (160), and a second electrode (150), wherein the insulating passivation layer (160) covers edges of the back face of the silicon cell main body (110), and at the edges of the back face of the silicon cell main body (110), the second transparent conductive oxide layer (130) and the first transparent conductive oxide layer (120) are arranged spaced apart from each other by means of the insulating passivation layer (160) arranged therebetween.

Bifacial crystalline solar cells and associated solar panel systems are provided. The cells include a p-type crystalline silicon layer and a barrier layer. The panels include at least two rows of cells. The cells in each row are connected to one another in series. The rows are connected in parallel. A reflector is used to reflect light towards the underside of the panel. A long axis of the reflector is arranged to be parallel to the rows of cells.