The present application discloses a back contact solar cell, a manufacturing method therefor, and a photovoltaic module. The back contact solar cell includes: a semiconductor substrate, a transparent conductive layer, and an isolating protective structure. The semiconductor substrate comprises a first surface and a second surface, wherein the second surface comprises N-type regions and P-type regions alternately distributed and separated by isolating regions. The transparent conductive layer covers the second surface, wherein isolating grooves running through the transparent conductive layer are respectively formed on the isolating regions. The isolating grooves isolate parts of the transparent conductive layer located on the N-type regions from parts of the transparent conductive layer located on the P-type regions. The transparent conductive layer comprises a turned-up part close to an edge of the isolating grooves that is turned upwards along a direction facing away from the semiconductor substrate.

A photovoltaic cell (1) including a first front collector layer (4), an amorphous silicon layer (6) on the first layer (4) and a second conductive layer (8) on the amorphous silicon layer (6). Electrical connection of the second conductive layer (8) to the first layer (4) is made through the amorphous silicon layer (6) at the periphery of the photovoltaic cell, the electrically conductive layer (8) comprising a positive peripheral bus (8), which is connected to the TCO first layer (4) and to at least one positive connection terminal at one end of the positive peripheral bus, and a negative peripheral bus, which is connected to a negative connection terminal, and the positive and negative peripheral buses being asymmetrical relative to one another, with the positive peripheral bus being longer than the negative peripheral bus.

A method of manufacturing a carrier-selective contact junction silicon solar cell includes: preparing a conductive silicon substrate; forming a first passivation layer and a second passivation layer on and under the conductive silicon substrate, respectively; forming an electron-selective contact layer under the second passivation layer; forming a hole-selective contact layer on the first passivation layer; forming an upper transparent electrode on the hole-selective contact layer; forming an upper metal electrode on the upper transparent electrode; and forming a lower metal electrode under the electron-selective contact layer. In forming the hole-selective contact layer, a sandwich-structured multilayer film is formed by depositing a copper iodide thin film on a top surface and a bottom surface of an iodine thin film, and a single-film copper iodide thin film is formed by low-temperature annealing the sandwich-structured multilayer film.

A conductive layer, comprising a first TCO layer, a second TCO layer, a third TCO layer and a fourth TCO layer which are stacked. The first TCO layer is prepared in a first atmosphere, and the first atmosphere is a mixed gas of argon and hydrogen; the second TCO layer is prepared in a second atmosphere, the second atmosphere is a mixed gas of argon, hydrogen, and oxygen, a partial pressure gradient of hydrogen is reduced, and a partial pressure gradient of oxygen is increased; the third TCO layer is prepared in a third atmosphere, and the third atmosphere is a mixed gas of argon and oxygen; the fourth TCO layer is prepared in a fourth atmosphere, the fourth atmosphere is a mixed gas of argon and oxygen, and a partial pressure gradient of oxygen is decreased.

Provided are a transparent electrode that can be manufactured at a low temperature, has low sheet resistance, is highly transmissive and lightweight, and allows realization of a flexible solar cell, large-area illumination, and the like, a preparing method of the transparent electrode, and an electronic device using the transparent electrode. A transparent electrode according to an embodiment has a network of silver nanowires. The transparent electrode includes a silver nanowire having a minimum curvature radius r of a curve of 2 m or less and a bending angle of 90 or more, and a compound having a boiling point of 160 C. or lower and an alkynyl group and a hydroxy group.

The present inventive concept provides a solar cell and a manufacturing method therefor, the solar cell comprising: a semiconductor substrate; a first transparent electrode layer provided on one surface of the semiconductor substrate; and a first electrode provided on one surface of the first transparent electrode layer, wherein the first electrode comprises a first pattern layer pattern-formed through a deposition process using a shadow mask.

According to one embodiment, a solar cell including a transparent first electrode, an n-type layer, a light absorption layer that contains an inorganic material, and a second electrode is provided. The n-type layer is present between the first electrode and the light absorption layer. The light absorption layer is present between the n-type layer and the second electrode. The first electrode has a gap penetrating the first electrode. The n-type layer, the light absorption layer, and the second electrode are each partially included in the gap, and a part of the n-type layer, a part of the light absorption layer, and a part of the second electrode are arranged in this order in the gap.

A sensor, a device, a system, and a method, for biometric sensing, are provided. Such a device or system includes a micro heater and a micro temperature sensor for at least active thermal sensing, which may comprise an oxide semiconductor material. The micro heater and the micro temperature sensor may be separate or combined in one pixel. The present disclosure also provides an out-cell type or an in-cell type of biometric sensor on display device, for example, an out-cell type or an in-cell type fingerprint sensor on display (FoD) device. The pixels for active thermal sensing include an oxide semiconductor material. The methods of making and the methods of using the sensors, the devices, or the system are also provided.

Disclosed are a semiconductor substrate and a treating method thereof, a solar cell and a preparation method thereof. The method for treating a semiconductor substrate includes forming a smooth surface area and a textured surface area adjacent to the smooth surface area on at least one side of the semiconductor substrate. The area of the smooth surface area is greater than or equal to that of the textured surface area. A smooth surface area and a textured surface area adjacent to the smooth surface area are formed on at least one side of the semiconductor substrate, so that the transparent conductive film is located and only located on the smooth surface area. A grid line is formed on the side of the corresponding to the transparent conductive film facing away from the semiconductor substrate, thereby improving the photovoltaic conversion efficiency of the solar cell.

This application provides a heterojunction solar cell and a preparation method. The heterojunction solar cell includes: a silicon substrate being n-type or p-type doped, and having a front surface and a back surface opposite to each other; a first passivation layer and a second passivation layer sequentially located on the front surface of the silicon substrate; a third passivation layer and a fourth passivation layer sequentially located on the back surface of the silicon substrate; a silicon oxycarbide layer located on a surface of the fourth passivation layer away from the silicon substrate, wherein the silicon oxycarbide layer is n-type or p-type doped to form PN junction with the silicon substrate, an atomic percentage of carbon is greater than an atomic percentage of oxygen in the silicon oxycarbide layer. The heterojunction solar cell of the present application improves the performance of the solar cell. The carbon and the oxygen in the silicon oxycarbide layer have a fixed effect on the hydrogen, which is beneficial for reducing the loss of hydrogen.