H10F77/407

LIGHT-EMITTING DEVICE AND PHOTOELECTRIC SENSOR

A light-emitting device includes a light-emitting assembly and a light-transmissive component. The light-emitting assembly includes a first bracket, a light-emitting element, and a first photosensitive element. The first bracket has a first surface and a second surface opposite to each other. Multiple first electrodes and multiple second electrodes are disposed at intervals on the first surface, and the light-emitting element and the first photosensitive element are disposed at intervals on the second surface. The light-emitting element is electrically connected to at least one of the multiple first electrodes. The first photosensitive element is electrically connected to at least one of the multiple second electrodes. The light-transmissive component includes a light-transmissive encapsulation layer and a light-concentrating portion which are sequentially disposed on a side of the light-emitting assembly facing away from the first surface, and the light-concentrating portion is disposed in correspondence with the light-emitting element.

Optoelectronic module having protruded and recessed structure for reducing optical crosstalk

An optoelectronic module, including a substrate, a covering member, a light emitting element, and a light receiving element, is provided. The covering member is disposed on the substrate and includes an upper cover portion, a peripheral sidewall portion connected to the upper cover portion, and an inside partition delimiting a first cavity and a second cavity. The first cavity is separated from the second cavity. The light emitting element is disposed on the substrate as corresponding to the first cavity. The light receiving element is disposed on the substrate as corresponding to the second cavity. The inside partition has a first inner wall surface located in the first cavity and a second inner wall surface located in the second cavity. A first protruded-recessed structure is formed on the first inner wall surface.

METHODS FOR MAKING SEMICONDUCTOR-BASED INTEGRATED CIRCUITS
20250093765 · 2025-03-20 ·

A method for making a IC is provided, including: identifying, in a schematic, first and second edge elements, which edge elements including devices whose layout patterns are configured to conform to a first layout grid; identifying all the elements between the first and second edge elements, at least one of the identified elements including a device whose layout pattern is configured to conform to a second layout grid that is finer than the first layout grid; and calculating a spatial quantity of a combined layout pattern of the identified elements between the first and second edge elements to determine whether the combined layout pattern conforms to the first layout grid.

Optical components for electronic devices

An electronic device can include a housing defining an aperture, and an electromagnetic radiation emitter and an electromagnetic radiation detector disposed in the housing. An optical component can be disposed in the aperture and can include a first region of a first material having a first index of refraction, the first region aligned with the electromagnetic radiation emitter, a second region of the first material, the second region aligned with the electromagnetic radiation detector, and a bulk region surrounding a periphery of the first region and a periphery of the second region, the bulk region including a second material having a second index of refraction that is lower than the first index of refraction.

Photoelectric conversion element, photodetector, photodetection system, electronic apparatus, and mobile body

A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode. The stacked structure includes a first electrode, a first photoelectric conversion layer, and a second electrode that are stacked in order, and the electric charge accumulation electrode is disposed to be separated from the first electrode and be opposed to the first photoelectric conversion layer with an insulating layer interposed therebetween.

Sample clock generator for optical tomographic imaging apparatus, and optical tomographic imaging apparatus
09584098 · 2017-02-28 · ·

A sample clock generator includes a first optical path and a second optical path through which input lights are guided, an optical phase shifter to shift a phase of the input light guided through the first optical path, an interference-light generating unit to combine a phase-shifted input light and the input light guided through the second optical path to thereby generate an interference light for sample clock, a splitting unit to split the interference light for sample clock into two split lights having different phases, one light receiving unit to at least receive one split light from among the two split lights having different phases, the other light receiving unit to at least receive the other split light, a signal generating unit to generate a sample clock signal based on signals outputted from the one light receiving unit and the other light receiving unit.

Wafer level packaging for proximity sensor
09583666 · 2017-02-28 · ·

A proximity sensor includes a semiconductor die, a light emitting assembly, a redistribution layer, and an encapsulating layer. A surface of the semiconductor die includes a sensor area and contact pads. A lens is positioned over the sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads that face the redistribution layer. A side of the redistribution layer includes contact pads. Electrical connectors place each of the contact pads of the semiconductor die in electrical communication with a respective one of the contact pads of the redistribution layer. The encapsulating layer is positioned on the redistribution layer and at least partially encapsulates the semiconductor die, the lens over the sensor area of the semiconductor die, and the light emitting assembly.

Integrated imaging device for infrared radiation and method of production
09577001 · 2017-02-21 · ·

The integrated imaging device comprises a substrate (1) with an integrated circuit (4), a cover (2), a cavity (6) enclosed between the substrate (1) and the cover (2), and a sensor (5) or an array of sensors (5) arranged in the cavity (6). A surface (11, 12) of the substrate (1) or the cover (2) opposite the cavity (6) has a structure (8) directing incident radiation. The surface structure (8) may be a plate zone or a Fresnel lens focusing infrared radiation and may be etched into the surface of the substrate or cover, respectively.

Infrared sensor and method for manufacturing same, filter member for infrared sensor, and photocoupler

A filter member includes a first lead terminal, an optical filter, and a first mold member, and a light incidence surface and a light emission surface of the optical filter is exposed from the first mold member. A sensor member includes an IR sensor element, a second lead terminal and a second mold member. A light-receiving surface of the IR sensor element is exposed from the second mole member. The filter member is disposed on the sensor member so that the light emission surface of the optical filter faces the light-receiving surface of the IR sensor element in the sensor member.

Proximity Sensor Having Light-Blocking Structure in Leadframe and Method of Making Same
20170047469 · 2017-02-16 ·

A method for fabricating a semiconductor proximity sensor includes providing a flat leadframe with a first and a second surface. The second surface is solderable. The leadframe includes a first and a second pad, a plurality of leads, and fingers framing the first pad. The fingers are spaced from the first pad by a gap which is filled with a clear molding compound. A light-emitting diode (LED) chip is assembled on the first pad and encapsulated by a first volume of the clear compound. The first volume outlined as a first lens. A sensor chip is assembled on the second pad and encapsulated by a second volume of the clear compound. The second volume outlined as a second lens. Opaque molding compound fills the space between the first and second volumes of clear compound and forms walls rising from the frame of fingers to create an enclosed cavity for the LED. The pads, leads, and fingers connected to a board using a layer of solder for attaching the proximity sensor.