H10F77/50

LIGHT RECEIVING AND EMITTING ELEMENT MODULE AND SENSOR DEVICE USING SAME
20170244004 · 2017-08-24 ·

A light receiving and emitting element module includes a substrate; a light emitting element and a light receiving element on an upper surface of the substrate; a frame-shaped outer wall that on the upper surface of the substrate; and a light shielding wall that is positioned inside the outer wall and partitions an internal space of the outer wall into spaces respectively corresponding to the light emitting element and the light receiving element. The light shielding wall includes a light emitting element-side shading surface on the light emitting element side, a light receiving element-side shading surface on the light receiving element side, and a lower surface that is connected to each of the light emitting element-side shading surface and the light receiving element-side shading surface, and that faces the substrate. The lower surface has an inclined surface inclined with respect to the upper surface of the substrate.

Sensor chip package structure and manufacturing method thereof

A sensor chip package structure and a manufacturing method thereof are provided. The sensor chip package structure includes a substrate, a sensor chip and a wiring layer. The sensor chip is mounted on the substrate and has a top surface and a concave portion concaved from the top surface. The sensor chip has an active region formed on the top surface and the concave portion is located at one side of the active region. The concave portion has a depth of 100 m to 400 m. The wiring layer is disposed on the sensor chip and electrically connected to the active region. At least a portion of the wiring layer extends from the active region along a sidewall of the concave portion to a bottom surface of the concave portion.

Solar cells and modules with fired multilayer stacks

Intercalation pastes for use with semiconductor devices are disclosed. The pastes contain precious metal particles, intercalating particles, and an organic vehicle and can be used to improve the material properties of metal particle layers. Specific formulations have been developed to be screen-printed directly onto a dried metal particle layer and fired to make a fired multilayer stack. The fired multilayer stack can be tailored to create a solderable surface, high mechanical strength, and low contact resistance. In some embodiments, the fired multilayer stack can etch through a dielectric layer to improve adhesion to a substrate. Such pastes can be used to increase the efficiency of silicon solar cells, specifically multi- and mono-crystalline silicon back-surface field (BSF), and passivated emitter and rear contact (PERC) photovoltaic cells. Other applications include integrated circuits and more broadly, electronic devices.

Optoelectronic semiconductor component

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having side areas covered by a shaped body; at least one via including an electrically conductive material; and at least one electrically conductive connection electrically conductively connected to the semiconductor chip and the via, wherein the via is laterally spaced part from the semiconductor chip; the via includes a contact pin, the contact pin including an electrically conductive material; and the contact pin is laterally completely enclosed by the shaped body.

SOLID-STATE RADIATION TRANSDUCER DEVICES HAVING FLIP-CHIP MOUNTED SOLID-STATE RADIATION TRANSDUCERS AND ASSOCIATED SYSTEMS AND METHODS
20170222111 · 2017-08-03 ·

Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. A lead can be positioned at a back side of the transmissive support member. The radiation transducer can be flip-chip mounted to the transmissive support assembly. For example, a solder connection can be present between a contact of the radiation transducer and the lead of the transmissive support assembly.

OPTICAL DEVICES, IN PARTICULAR COMPUTATIONAL CAMERAS, AND METHODS FOR MANUFACTURING THE SAME

A method for manufacturing one or more optical devices, each comprising a first member and a second member, and a spacer arranged between the first and second members. The method includes manufacturing a spacer wafer including a multitude of the spacers. Manufacturing the spacer wafer includes providing a replication tool having spacer replication sections; bringing the replication tool in contact with a first surface of another wafer; bringing a vacuum sealing chuck into contact with a second surface of the other wafer while the other wafer remains in contact with the replication tool; and injecting a liquid, viscous or plastically deformable material through an inlet of the vacuum sealing chuck so as to substantially fill the spacer replication sections.

Method Of Forming A Wire Bond Sensor Package
20170222065 · 2017-08-03 ·

A packaged chip assembly with a semiconductor substrate, a semiconductor device integrally formed on or in the substrate's top surface, and first bond pads at the substrate's top surface electrically coupled to the semiconductor device. A second substrate includes a first aperture and one or more second apertures extending therethrough, second and third bond pads at the second substrate's top and bottom surfaces, respectively, and conductors electrically coupled to the second and third bond pads. The semiconductor substrate's top surface is secured to the second substrate's bottom surface such that the semiconductor device is aligned with the first aperture, and each of the first bond pads is aligned with one of the second apertures. A plurality of wires are each electrically connected between one of the first bond pads and one of the second bond pads and each passing through one of the one or more second apertures.

REDUCING DARK CURRENT IN GERMANIUM PHOTODIODES BY ELECTRICAL OVER-STRESS
20170222083 · 2017-08-03 ·

Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.

REDUCING DARK CURRENT IN GERMANIUM PHOTODIODES BY ELECTRICAL OVER-STRESS
20170221779 · 2017-08-03 ·

Systems for reducing dark current in a photodiode include a heater configured to heat a photodiode above room temperature. A reverse bias voltage source is configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode.

Semiconductor device package and method of manufacturing the same

A method of manufacturing a semiconductor device package includes disposing at least one die over a substrate, dispensing a liquid material on the die, and curing the liquid material so that the liquid material forms a protective layer attached to a portion of the die. The method further includes forming an encapsulant covering at least a portion of the substrate and a portion of the die, where the protective layer is exposed from the encapsulant in a cavity defined by the encapsulant. The method further includes removing the protective layer from the die, and disposing a cap over the cavity.