A solid-state imaging device includes a plurality of pixels in a two-dimensional array. Each pixel includes a photoelectric conversion element that converts incident light into electric charge, and a charge holding element that receives the electric charge from the photoelectric conversion element, and transfers the electric charge to a corresponding floating diffusion. The charge holding element further includes a plurality of electrodes.

A photoelectric conversion device includes a plurality of pixels, a data line, and a receiving circuit. Each of plurality of pixels includes a photoelectric conversion unit, a processing circuit, and a pixel output circuit. The photoelectric conversion unit includes an avalanche photodiode that multiplies charge generated by an incident of photon by avalanche multiplication, and outputs a signal in accordance with the incident of photon. The processing circuit processes a signal output from the photoelectric conversion unit. The pixel output circuit controls an output of the signal processed by the processing circuit. The data line is connected to the plurality of pixels. The receiving circuit receives a pixel signal output from the plurality of pixels via the data line. An off-state leakage current of the transistor included in the receiving circuit is smaller than an off-state leakage current of the transistor included in the pixel output circuit.

An image sensor includes an array of optically switchable magnetic tunnel junctions (MTJs) arranged in columns and rows. The image sensor has first lines of transparent conductive material and second lines of conductive material. Each first line is in contact with the free layers of the MTJs in a corresponding row. Each second line is electrically connected to the fixed layers MTJs in a corresponding column. The first lines are concurrently exposable to radiation. The first and second lines are selectively biasable. In a global reset operation, biasing conditions are such that all MTJs are switched to an anti-parallel state. In a global sense operation, biasing conditions are such that, depending upon the intensity of radiation received at those portions of the first lines in contact with MTJs, the MTJs may switch to a parallel state. In selective read operations, biasing conditions are such that stored data values in the MTJs can be read.

An image sensor comprises a pixel array including a plurality of pixels where a plurality of columns and a plurality of rows are arranged, a read-out circuit generating image data using pixel signals output from pixels corresponding to a row selected from among the plurality of rows, and a plurality of gain adjustment lines provided for every plurality of columns and adjusting gains of pixels of their respective corresponding columns.

A 3D imaging system includes an optical modulator for modulating a returned portion of a light pulse as a function of time. The returned light pulse portion is reflected or scattered from a scene for which a 3D image or video is desired. The 3D imaging system also includes an element array receiving the modulated light pulse portion and a sensor array of pixels, corresponding to the element array. The pixel array is positioned to receive light output from the element array. The element array may include an array of polarizing elements, each corresponding to one or more pixels. The polarization states of the polarizing elements can be configured so that time-of-flight information of the returned light pulse can be measured from signals produced by the pixel array, in response to the returned modulated portion of the light pulse.

A method of limiting cross-talk in an imaging sensor, the sensor being in the form of a matrix of macropixels defining an image, each macropixel being formed by a matrix of individual pixels, each of which is dedicated to a distinct spectral band, all of the individual pixels dedicated to the same spectral band forming a sub-image, the image being topologically subdivided into at least one parcel, and the method including the following steps: measuring the spectral response of each individual pixel λ1, λ2, λ3, . . . , λ9; calculating the mean spectral response of each sub-image in a parcel; targeting to define the ideal response of each sub-image in the parcel; estimating a series of coefficients for minimizing cross-talk in the parcel; and applying the coefficients to the macropixels in order to correct the sub-images in the parcel. The method is remarkable in that the ideal response is a Gaussian function.

An imaging device may have an array of image sensor pixels. Each image sensor pixel of the array of image sensor pixels may have first and second photodiodes with different sensitivities. The photodiode having the lower sensitivity may be coupled to a storage diode and may alternately discard charge and transfer charge to the storage diode during an integration time for flicker mitigation. The length of time for which charge is discarded in each shutter cycle for flicker mitigation may be selected to adjust dynamic range of the imaging pixel. Upon conclusion of the integration time, charge from the storage diode may be sampled in a high conversion gain readout. Overflow charge from a dual conversion gain capacitor may then be sampled in a low conversion gain readout. Charge from the photodiode having higher sensitivity may finally be sampled in a high conversion gain readout.

The present technology relates to a solid-state imaging device and an electronic device capable of improving a saturation characteristic. A photo diode is formed on a substrate, and a floating diffusion accumulates a signal charge read from the photo diode. A plurality of vertical gate electrodes is formed from a surface of the substrate in a depth direction in a region between the photo diode and the floating diffusion, and an overflow path is formed in a region interposed between a plurality of vertical gate electrodes. The present technology may be applied to a CMOS image sensor.

To reduce the number of ADCs in a solid-state image sensor that converts an analog pixel signal into a digital signal. An effective pixel generates an analog signal according to an amount of received light as an effective pixel signal using a power supply from a power supply line. A correction signal generation unit generates an analog signal including a noise component generated in the power supply line as a correction signal. A selection unit sequentially selects and outputs the effective pixel signal and the correction signal. An analog-digital converter performs processing of converting the output effective pixel signal into a digital signal and outputting the digital signal as effective pixel data and processing of converting the output correction signal into a digital signal and outputting the digital signal into correction data. A signal processing unit corrects the effective pixel data on the basis of the correction data.

An image sensor may include an image sensor pixel array, row control circuitry, and column readout circuitry. The array may include first and second sets of active pixels that are configured in different manners or controlled by the row control circuitry and column readout circuitry in different manners. The array may include optically black pixels that have photosensitive elements shield from incident light. The optically black pixels may be configured to generate first and second sets of black level signals adapted to both the first and second sets of active pixels. The corresponding sets of black level signals may be used to better reduce noise in corresponding sets of image signals generated by the first and second sets of active pixels.