Some embodiments of the present invention relate to a technical field of N-type TOPCon solar cells, and disclose a back-side metal electrode of an N-type TOPCon solar cell. The back-side metal electrode includes a substrate, a plurality of first silver fine grids disposed on a passivation film which is on a back side of the substrate, a plurality of second aluminum fine grids overlaid on the plurality of first silver fine grids, and a plurality of first silver main grids disposed perpendicular to the plurality of first silver fine grids. Each of the plurality of first silver main grids is a segmented structure. The back-side metal electrode further includes a plurality of second aluminum main grids, which are formed, in a printing manner, between any two adjacent grid segments of a plurality of grid segments and around each of the plurality of grid segments.

Provided is a solar cell and a photovoltaic module. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.

Embodiments of the present disclosure provide for methods of making substrates having an (AR) antireflective layer, substrates having an antireflective layer, devices including a substrate having an antireflective layer, and the like. The AR layer can have a total specular reflection of less than 10% at a wavelength of about 400-800 nm, and a height of about 500-1000 nm.

Disclosed is a solar cell module. The module includes a solar cell including a plurality of unit battery cells electrically connected to each other via internal connection electrodes; an upper cover disposed on a front face of the solar cell; a light-conversion coating layer coated on an inner face of the upper cover, wherein the light-conversion coating layer includes upconversion nano-particles for absorbing near-infrared rays and emitting light having a wavelength in a visible region; a lower cover disposed on a rear face of the solar cell; a first filling material layer formed between the solar cell and the light-conversion coating layer; and a second filling material layer formed between the solar cell and the lower cover.

Solar cells of varying composition are disclosed, generally including a central substrate, conductive layer(s), antireflection layers(s), passivation layer(s) and/or electrode(s). Multifunctional layers provide combined functions of passivation, transparency, sufficient conductivity for vertical carrier flow, the junction, and/or varying degrees of anti-reflectivity. Improved manufacturing methods including single-side CVD deposition processes and thermal treatment for layer formation and/or conversion are also disclosed.

The present invention relates to an emitter wrap-through solar cell and a method for preparing the same. The solar cell according to the present invention has a structure that may minimize generation of leakage current and minimize energy conversion efficiency measurement error. And, the preparation method of a solar cell according to the present invention may easily confirm the alignment state of the electrode, and thus, provide more improved productivity.

An optoelectronic device having a textured layer is described. In an aspect, a method may be used to produce the optoelectronic device, where the method includes epitaxially growing a semiconductor layer of the optoelectronic device on a growth substrate, and exposing the semiconductor layer to an etching process to create at least one textured surface in the semiconductor layer. The textured semiconductor layer can be referred to as a textured layer. The etching process is performed without the use of a template layer, or similar layer, configured as a mask to generate the texturing. The etching process can be done by one or more of a liquid or solution-based chemical etchant, gas etching, laser etching, plasma etching, or ion etching. The method can also include lifting the semiconductor layer of the optoelectronic device from the growth substrate by, for example, the use of an epitaxial lift off (ELO) process.

The present invention provides a novel crystalline oxide, a process for producing the crystalline oxides, a conductive paste comprising the crystalline oxides and an article comprising a substrate and an abovementioned conductive paste applied on the substrate.

A semiconductor device has a layered structure. The semiconductor device includes a metallic layer of thickness 1-100 nm, with a thickness optimized to absorb light in a wavelength range of operation. The device further includes an adjacent semiconductor layer additionally adjacent to an ohmic electrical contact, wherein the interface between the metallic layer and the semiconductor layer is electrically rectifying and energy selective. The device further includes a reflective back surface positioned opposite to the semiconductor layer relative to incident light providing broadband reflection in the wavelength range of operation. The semiconductor layer includes a quantum well adjacent to the metallic layer, wherein the energy selectivity is provided by the quantum well allowing charge carrier tunneling from the metallic layer. The device further may include an additional anti-reflection dielectric layer deposited on the metallic layer that is configured to minimize reflection of light in the wavelength range of operation.

Disclosed herein is a method of forming a glass coating including making a sol by hydrolyzing an organosilane in the presence of a least one solvent and at least one catalyst, further adding at least one alkoxysilane, and aging the sol for at least 24 hours.