Organic semiconductor composition, comprising an organic semiconductor (OSC) material and a binder which is a spirobifluorene compound comprising 1 to 4 substituted or unsubstituted spirobifluorene moieties of formula 26.

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An object of the present invention is to provide a composition for forming an organic semiconductor film that is excellent in printing properties and makes is possible to prepare an organic thin film transistor excellent in mobility and insulation reliability. Another object of the present invention is to provide an organic thin film transistor, electronic paper, and a display device. The composition for forming an organic semiconductor film of the present invention contains an organic semiconductor material, a phenolic reductant, a polymer compound having a weight-average molecular weight of equal to or greater than 500,000, a surfactant, and an organic solvent having a standard boiling point of equal to or higher than 150° C., in which a ratio of a content of the organic semiconductor material to a content of the polymer compound is 0.02 to 10 based on mass, and a ratio of a content of the phenolic reductant to the content of the polymer compound is 0.1 to 5 based on mass.

An electronic device includes a substrate, a barrier film, and one of an electrically-conductive layer and a semiconductor layer. The barrier film is provided on the substrate. The barrier film contains an inorganic polymer compound and an organic matter. One of the electrically-conductive layer and the semiconductor layer is provided on the substrate with the barrier film in between.

A method and structure for providing uniform, large-area graphene by way of a transfer-free, direct-growth process. In some embodiments, a SAM is used as a carbon source for direct graphene synthesis on a substrate. For example, a SAM is formed on an insulating surface, and a metal layer is formed over the SAM. The metal layer may serve as a catalytic metal, whereby the SAM is converted to graphene following an annealing process. The SAM is deposited using a VPD process (e.g., an ALD process and/or an MLD process). In some embodiments, a CNT having a controlled diameter may be formed on the surface of a nanorod by appropriately tuning the geometry of the nanorod. Additionally, in some embodiments, a curved graphene transistor may be formed over a curved oxide surface, thereby providing a band gap in a channel region of the graphene transistor.

Technologies are generally described for a four-terminal, gate-controlled, thin-film thyristor device. The thyristor device may essentially be an n-type thin-film transistor (TFT) with an additional emitter terminal. The thyristor device may exhibit an S-shaped negative differential resistance (NDR) characteristic resulting from conductance modulation. The conductance modulation may be caused by formation of a secondary channel for current flow due to an inherent structure of the device. The secondary channel may be formed in a semiconductor area within the device, the semiconductor area including a hole transporting organic semiconductor layer (HTL) and an electron transporting organic semiconductor layer (ETL). A gate terminal of the thyristor device may further allow onset of NDR characteristics to be controlled and may allow the device to be switched off.

A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.

Provided is a thin film transistor array substrate, including a gate electrode, a gate insulating layer covering the gate electrode, a semiconductor pattern formed on the gate insulating layer and including a channel region overlapping the gate electrode, a source electrode and a drain electrode formed on the semiconductor pattern and facing each other with a first opening exposing the channel region therebetween, a first protective layer formed on the gate insulating layer to cover the source electrode, the drain electrode and the semiconductor pattern and a metal oxide layer formed along a surface of the first protective layer.

In a method of forming a gate-all-around field effect transistor (GAA FET), a bottom support layer is formed over a substrate and a first group of carbon nanotubes (CNTs) are disposed over the bottom support layer. A first support layer is formed over the first group of CNTs and the bottom support layer such that the first group of CNTs are embedded in the first support layer. A second group of carbon nanotubes (CNTs) are disposed over the first support layer. A second support layer is formed over the second group of CNTs and the first support layer such that the second group of CNTs are embedded in the second support layer. A fin structure is formed by patterning at least the first support layer and the second support layer.

Objects of the present invention is to provide an organic semiconductor element having high mobility and to provide a composition for forming an organic semiconductor film with which an organic semiconductor film having high mobility can be formed, a method of manufacturing an organic semiconductor element formed from the composition for forming an organic semiconductor film, and a method of manufacturing an organic semiconductor film.

The organic semiconductor element according to the present invention has a semiconductor active layer including a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less. The composition for forming an organic semiconductor film according to the present invention contains a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less, and a solvent.

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The present invention provides a high-performance, highly homogeneous, highly stable electronic device by forming an extremely uniform interface between an insulator and an organic semiconductor, as well as an electronic apparatus using the same. The present invention relates to an electronic device which contains, as a component, an organic thin film in which a geometric two-dimensional arrangement is formed regularly by interdigitating skeletal structures of a positive three-pronged shape of triptycene and by adding a first molecule extending out of one plane of a two-dimensional molecular structure of the triptycene skeletal structure. The invention also relates to an electronic apparatus and the like which contains the electronic device in the interior of the electronic apparatus.