The present disclosure relates to a solid-state imaging device that makes it possible to suppress deterioration of phase difference information, and an electronic device.

There is provided a solid-state imaging device including a pixel array unit in which a plurality of pixels is two-dimensionally arrayed. The plurality of pixels includes a phase difference pixel for phase difference detection, the pixel array unit has an array pattern in which pixel units including neighboring pixels of a same color are regularly arrayed, and the phase difference pixel is partially not added when horizontal/vertical addition is performed on a pixel signal of a predetermined pixel in a horizontal direction and a pixel signal of a predetermined pixel in a vertical direction, in reading the plurality of pixels. The present disclosure can be applied to, for example, a CMOS image sensor having a phase difference pixel.

The present disclosure relates to a solid-state imaging element and an electronic apparatus that can achieve a higher image quality. The imaging element includes a pixel having a global drive portion in which all rows are driven at a same timing and a rolling drive portion in which each row is driven at a corresponding timing, a pixel array region in which a plurality of the pixels is placed in an array, a global drive circuit configured to supply a drive signal to the global drive portion, and a rolling drive circuit configured to supply a drive signal to the rolling drive portion. Further, the global drive circuit is placed on each of at least three or more sides of four sides surrounding the pixel array region. The present technology is applicable to a stacked CMOS image sensor, for example.

The present invention relates to an optical biometric sensor comprising: an image sensor comprising an array of photodetectors, wherein for acquiring sensing signals, the image sensor is controllable to sequentially start exposure of subsets of photodetectors; and a timing circuitry configured to control the start of exposure of a subset of photodetectors based on a present data transfer capacity on a data transfer bus configured to transfer data indicative of the acquired sensing signals from the optical biometric sensor to a host device.

An electronic apparatus includes an imaging element having a plurality of image capture regions, each of the image capture regions having a plurality of pixels for generating an image signal; a setting unit that sets different image capture conditions for the plurality of image capture regions; and a control unit that corrects a portion of an image signal of a photographic subject captured under first image capture conditions in an image capture region among the plurality of image capture regions so that it is as if the portion of the image signal was captured under second image capture conditions.

An apparatus comprises a generating unit configured to generate a plurality of pieces of RAW data for respective exposure times from RAW data obtained from a sensor that can perform shooting at an exposure time that is different for each pixel, and an encoding unit configured to encode the generated plurality of pieces of RAW data.

In an example embodiment, an image processing device includes a pixel array including pixels two-dimensionally arranged and configured to capture an image, each of the pixels including a plurality of photoelectric conversion elements and an image data processing circuit configured to generate image data from pixel signals output from the pixels. The image processing device further includes a color data processing circuit configured to extract color data from the image data and output extracted color data. The image processing device further includes a depth data extraction circuit configured to extract depth data from the image data and output extracted depth data. The image processing device further includes an output control circuit configured to control the output of the color data and the depth data.

An image capturing device includes an image capturing unit capturing an image at a timing based on a first frame rate and outputs data corresponding to the image after a first period, an image data generation unit generating image data based on the output data and outputting the image data after a second period, a display unit displaying a display image based on the image data after the second period and at a timing based on a second frame rate, and a mode selecting unit selecting a first or second mode. The first mode prioritizes reduction in a display delay time. The second mode prioritizes image quality of the display image over reduction in the display delay time. A total period of the first and second periods is less than or equal to a first vertical synchronization period based on the first frame rate when the first mode is selected.

An object is to reduce a circuit scale in a solid-state imaging element that detects an address event. The solid-state imaging element is provided with a plurality of photoelectric conversion elements, a signal supply unit, and a detection unit. In this solid-state imaging element, each of the plurality of photoelectric conversion elements photoelectrically converts incident light to generate a first electric signal. Furthermore, in the solid-state imaging element, the detection unit detects whether or not a change amount of the first electric signal of each of the plurality of photoelectric conversion elements exceeds a predetermined threshold and outputs a detection signal indicating a result of the detection result.

A pixel matrix includes a sub-matrix of four adjacent pixels. Each of the pixels of the sub-matrix comprises: a set of a photoelectric-effect element and a memory point, a detection node, a transfer gate. The binning stage is connected to the set and is common with an adjacent pixel of the sub-matrix. At least one detection node per sub-matrix is common to two adjacent pixels of the sub-matrix. The pixel matrix furthermore comprises at least one readout stage per sub-matrix, connected to the common detection node.

Provided are a pixel array and an image sensor including the same. The pixel array includes a plurality of sub-pixels adjacent to each other and a readout circuit connected to the plurality of sub-pixels through a floating diffusion node. Each of the sub-pixels includes a photoelectric conversion element, an overflow transistor connected to the photoelectric conversion element, a phototransistor connected to the photoelectric conversion element and the overflow transistor, and a storage element connected to the phototransistor.