A semiconductor device, such as a heterojunction bipolar transistor (HBT), may include an extrinsic base region an intrinsic base region, and a lateral base link region disposed between and in contact with each of the extrinsic base region and an intrinsic base region. The extrinsic base region, the lateral base link region, and a portion of the intrinsic base region each may be formed on a passivation layer disposed over an isolation region and a collector region of a substrate of the semiconductor device. The extrinsic base region and a first portion of the lateral base link region may be formed from polycrystalline semiconductor material. The intrinsic base region and a second portion of the lateral base link region may be formed from monocrystalline semiconductor material. The lateral base link region may be formed after formation of the extrinsic base region and the intrinsic base region.

The present disclosure relates to semiconductor structures and, more particularly, to diode triggered silicon controlled rectifiers and methods of manufacture. The structure includes: a vertical silicon controlled rectifier (SCR) having a doped semiconductor material region over a semiconductor substrate; and at least one vertical triggering diode electrically connected to the SCR in series, and having a doped semiconductor material region over a doped region in the semiconductor substrate.